STP20N60M2 vs IPP60R190P6XKSA1 对比
详细并排对比 STP20N60M2 出自 STMicroelectronics 和 IPP60R190P6XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
STMicroelectronics
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
STP20N60M2 ✓ 量产中
规格对比
| 参数 | STP20N60M2 | IPP60R190P6XKSA1 |
|---|---|---|
| 品牌 | STMicroelectronics | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.50 | $1.02 |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 20 A | — |
| Continuous Drain Current (ID) at 100°C | 12 A | — |
| Pulsed Drain Current (IDM) | 80 A | — |
| On-Resistance (RDS(on)) | 0.19 ohm typical, 0.23 ohm max | — |
| Gate-Source Voltage (VGS) | ±25 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V | — |
| Total Gate Charge (Qg) | 45 nC | — |
| Input Capacitance (Ciss) | 1900 pF | — |
| Output Capacitance (Coss) | 120 pF | — |
| Reverse Transfer Capacitance (Crss) | 5 pF | — |
| Avalanche Energy (EAS) | 400 mJ | — |
| Thermal Resistance (Junction-to-Case) | 1.67 °C/W | — |
| 热阻，结到环境 | 62.5 °C/W | — |
| 工作温度范围 | -55°C to +150°C | -55C to +150C (junction) |
| 封装 | TO-220 | PG-TO220-3 (through-hole) |
| 安装类型 | Through Hole | Through Hole |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS P6 |
| Technology | — | Superjunction (SJ) MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| On-Resistance RDS(on) max at 25C | — | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | — | 151 W |
| Gate Drive Voltage (typical) | — | 10 V |
| Lead-Free | — | Yes |
| MSL 等级 | — | Not applicable (through-hole) |
| Product Variant | — | XKSA1 (industrial grade, tube pack) |