STP20N60M2 vs IPP60R190P6XKSA1 Comparison

Detailed side-by-side comparison of STP20N60M2 by STMicroelectronics and IPP60R190P6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STP20N60M2 IPP60R190P6XKSA1
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.50 $1.02
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at 25°C 20 A —
Continuous Drain Current (ID) at 100°C 12 A —
Pulsed Drain Current (IDM) 80 A —
On-Resistance (RDS(on)) 0.19 ohm typical, 0.23 ohm max —
Gate-Source Voltage (VGS) ±25 V —
Gate Threshold Voltage (VGS(th)) 2 V to 4 V —
Total Gate Charge (Qg) 45 nC —
Input Capacitance (Ciss) 1900 pF —
Output Capacitance (Coss) 120 pF —
Reverse Transfer Capacitance (Crss) 5 pF —
Avalanche Energy (EAS) 400 mJ —
Thermal Resistance (Junction-to-Case) 1.67 °C/W —
Thermal Resistance, Junction-to-Ambient 62.5 °C/W —
Operating Temperature Range -55°C to +150°C -55C to +150C (junction)
Package TO-220 PG-TO220-3 (through-hole)
Mounting Type Through Hole Through Hole
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — CoolMOS P6
Technology — Superjunction (SJ) MOSFET
Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 20.2 A
On-Resistance RDS(on) max at 25C — 190 mOhm
Total Power Dissipation (Ptot) at Tc=25C — 151 W
Gate Drive Voltage (typical) — 10 V
Lead-Free — Yes
MSL Level — Not applicable (through-hole)
Product Variant — XKSA1 (industrial grade, tube pack)

Datasheets & Resources

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