CY14B101J2-SXI - 1Mbit I2C nvSRAM 3.4MHz 8-SOIC | Infineon
料号： CY14B101J2-SXI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.2 | $5.20 |
| 10 | $4.68 | $46.80 |
| 100 | $4.16 | $416.00 |
| 500 | $3.75 | $1,875.00 |
| 1,000 | $3.4 | $3,400.00 |
CY14B101J2-SXI 概述
An nvSRAM (non-volatile static random access memory) is a hybrid memory device that combines the fast, unlimited-endurance read/write behavior of SRAM with the non-volatility of EEPROM or Flash. In the memory hierarchy, it sits between pure SRAM (volatile, fastest) and non-volatile technologies (EEPROM, FRAM, Flash), offering byte-wide SRAM access backed by automatic non-volatile store operations. This makes nvSRAM a power-management IC companion component in systems that must preserve state across power loss without the slow write cycles and limited endurance of EEPROM.
Key features of the CY14B101J2-SXI include a 1-Mbit (128K x 8) array density, a standard two-wire I2C serial interface clocked at up to 3.4 MHz in high-speed mode, and guaranteed 20-year non-volatile data retention. Writes to the SRAM cell occur at SRAM speed with effectively unlimited endurance, while non-volatile store operations are software or hardware triggered using an external VCAP capacitor for energy harvesting during STORE.
Architecturally, the device integrates a static RAM array with a non-volatile quantum-trap storage element per cell. During a STORE operation, data is transferred from the SRAM array into the non-volatile cells using energy drawn from the external VCAP capacitor, so the operation completes even if VCC has already been lost. On power-up, a RECALL operation automatically restores SRAM contents from the non-volatile array.
Typical applications include industrial data loggers, metering systems, network equipment configuration storage, point-of-sale terminals, and robotic or factory-automation controllers where frequent state saving and instant power-loss protection are required. The I2C interface minimizes pin count, board area, and controller GPIO usage.
When designing with this device, allocate board space for the external VCAP capacitor and follow the datasheet layout guidance; omitting or undersizing VCAP compromises STORE reliability. Also observe I2C bus pull-up sizing for 3.4 MHz high-speed operation.
This page synthesizes verified distributor data, lifecycle information, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, giving engineers a single citable reference for selection and sourcing decisions.
直接替换替代料： CY14B101J2-SXI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CY14B101J2-SXI （相同外形与封装尺寸） ——差异在于 Interface, Organization, RoHS Status, Density, Memory Size.
快速对比工具——选择替代料号进行并排对比：
CY14E101J2-SXI
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
CY14B101J2-SXI 最大额定值与电气特性
| 存储器类型 | nvSRAM (Non-Volatile SRAM) |
| 存储容量 | 1 Mbit |
| 存储组织 | 128K x 8 |
| 接口 | I2C Serial (2-wire) |
| 最大时钟频率 | 3.4 MHz |
| Data Retention | 20 years |
| Density | 1049 kbits |
| Package Type | 8-SOIC (0.300 inch, MO-119 family) |
| 安装类型 | Surface Mount |
| Store Mechanism | Software / auto-store with external VCAP capacitor |
| RoHS 状态 | RoHS Compliant |
| Packaging | Tube |
CY14B101J2-SXI 8-soic (0.300 inch, mo-119 family) 引脚配置指南
CY14B101J2-SXI（8-soic (0.300 inch, mo-119 family) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： CY14B101J2-SXI.
请参阅 数据手册 以查看完整引脚配置。
典型应用
CY14B101J2-SXI 适用于 6 应用s: Industrial Data Logging, Utility Metering Systems, Networking and Telecom Equipment Configuration Storage, Point-of-Sale and Transaction Terminals, Robotics and Factory Automation Controllers, Medical Device Settings and Calibration Storage.
Industrial Data Logging
Factory and process data loggers write continuously and must not lose records during power interruptions. The CY14B101J2-SXI fits this role because its SRAM core accepts writes at bus speed (I2C up to 3.4 MHz) with effectively unlimited endurance, so the logger can record every event in real time without the millisecond erase/write stalls and one-million-cycle wear limits of EEPROM. On power failure, the auto-STORE mechanism transfers the SRAM array into non-volatile cells using energy from the external VCAP capacitor, and on power-up a RECALL restores the full 1-Mbit log. This yields true 20-year retention of the event history with no software intervention, making the part a robust choice for metering, monitoring, and automation record-keeping systems.
推荐
Utility Metering Systems
Electricity, gas, and water meters must preserve billing and tamper records across years of operation and frequent power cycles. The CY14B101J2-SXI stores metering constants and accumulated data in its 128K x 8 array, writing at SRAM speed each measurement cycle so no update is ever lost to write latency. Its 20-year retention matches the service life of the meter, and the non-volatile STORE completed from VCAP energy guarantees data survives mains failure or tampering events that cut supply abruptly. Compared with EEPROM-based designs, the nvSRAM removes endurance concerns from frequent tariff-register updates, and the small 8-SOIC footprint fits dense meter PCBs. The I2C interface shares a two-wire bus with the metering MCU and RTC, minimizing pin count and board routing.
推荐
Networking and Telecom Equipment Configuration Storage
Routers, switches, and telecom line cards store configuration, MAC addresses, and firmware settings in non-volatile memory that is updated whenever an administrator commits changes. The CY14B101J2-SXI's 1-Mbit capacity holds substantial configuration images, and its I2C interface at up to 3.4 MHz allows quick retrieval at boot and fast bulk dumps during management operations. Because writes occur at SRAM speed with unlimited endurance, configuration commits are instantaneous and never wear the device, unlike Flash-based alternatives that need block-erase management. The auto-STORE feature protects the last committed configuration if power fails mid-session, and 20-year retention suits long-deployment network hardware. The 8-SOIC package mounts easily on densely populated control cards.
推荐
Point-of-Sale and Transaction Terminals
POS terminals and payment devices must journal transactions reliably and recover cleanly after unexpected power loss. The CY14B101J2-SXI journals each transaction to its SRAM array in real time; the auto-STORE transfer, powered by the external VCAP capacitor, moves the journal into non-volatile storage even when mains power drops mid-transaction. Its 1-Mbit (128K x 8) capacity holds thousands of transaction records, and 20-year retention supports audit and fiscal-compliance requirements over the terminal's service life. The I2C bus integrates simply with the terminal's security controller, and the 8-SOIC package suits compact handheld housings. Compared with EEPROM journaling, the nvSRAM eliminates write-latency queues at the checkout counter and erase-cycle wear over years of daily use.
推荐
Robotics and Factory Automation Controllers
Automation controllers, servo drives, and robot axes persist position calibration, recipe parameters, and fault histories that must survive power cycles and emergency stops. The CY14B101J2-SXI writes calibration and state data at SRAM speed on every control-loop update opportunity, with unlimited endurance that tolerates continuous parameter tuning during commissioning. When an emergency stop or power dip occurs, the VCAP-backed auto-STORE preserves the last known axis positions and machine state for exact resumption after restart, preventing costly rehoming procedures. The 3.4 MHz I2C interface shares the controller's sensor bus, and the 1-Mbit array stores multiple recipe sets. The industrial-grade Cypress/Infineon heritage of this family aligns with factory-floor reliability expectations.
推荐
Medical Device Settings and Calibration Storage
Portable and benchtop medical instruments store patient-configured settings, calibration constants, and usage counters that must remain valid across power removal for the life of the device. The CY14B101J2-SXI's 20-year retention exceeds typical medical product service expectations, and its SRAM-speed writes let the instrument update calibration tables immediately after each adjustment without programming delays. The 1-Mbit, 128K x 8 array accommodates device settings plus audit-trail usage logs, and the auto-STORE mechanism ensures data integrity through battery swaps and unplanned shutdowns. The two-wire I2C interface keeps isolation boundaries simple in patient-connected designs, and the small 8-SOIC package fits handheld diagnostic enclosures. Compared with EEPROM, it avoids endurance limits on frequently updated counters.
推荐
推荐产品汇总
工程参考数据： CY14B101J2-SXI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14E101J2-SXI |
|---|---|---|
| Package | 8-SOIC | 8-SOIC - same |
| Brand | Infineon Technologies (Cypress design) | Infineon Technologies |
| Memory Size | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Interface | I2C, up to 3.4 MHz | I2C, up to 3.4 MHz |
| Data Retention | 20 years | 20 years |
| Typical Role | 3.3 V class industrial nvSRAM storage | Low-voltage rail nvSRAM storage |
关键差异点
- SRAM-speed writes with unlimited endurance （对比 EEPROM (e.g. generic 1-Mbit I2C EEPROM))
- Power-fail-proof auto-STORE from VCAP energy （对比 Battery-backed SRAM modules)
- 3.4 MHz high-speed I2C operation （对比 CY14E101J2-SXI (same family, lower voltage class))
设计说明
The VCAP capacitor is functionally critical, not optional: it supplies the entire energy for the non-volatile STORE transfer, which must complete even as VCC collapses. Use the capacitance value recommended in the Infineon datasheet, select a low-ESR ceramic capacitor, and place it within a few millimeters of the VCAP pin with a short, low-inductance return to ground. Do not share the VCAP node with other loads. Estimated: undersizing VCAP is the leading cause of field data-corruption reports on this family, so treat it as a critical BOM item with the same rigor as the main supply decoupling.
At the 3.4 MHz I2C high-speed rate, bus capacitance and pull-up sizing dominate signal integrity. Estimated: with a 400 pF maximum high-speed bus load, pull-up currents must be strong enough to meet rise-time limits; use the HS-mode master current-source requirement from the datasheet and keep SDA/SCL trace lengths short, with a solid ground plane beneath. On long backplanes or with multiple slaves, consider dropping to 400 kHz fast mode during initial bring-up and enabling 3.4 MHz only after verifying rise/fall times with an oscilloscope.
Two pitfalls recur in nvSRAM designs. First, firmware must verify STORE completion before assuming data is safe: after issuing a software STORE, poll the device status rather than powering down on a fixed delay. Second, because this is a legacy Cypress part continued under Infineon and supplemented by Rochester Electronics stock, buyers occasionally receive older date codes; qualify incoming inventory and avoid mixing vintages without re-verification. Finally, remember that RECALL occurs automatically at power-up and briefly delays the first valid bus access - do not address the device before the datasheet tRecall time has elapsed.
合规信息
Distributor data describes the package as 'SOIC, 0.300 INCH, ROHS COMPLIANT, MO-119'. Other compliance attributes were not stated in the verified data.
