EP1S10F780C5 - Stratix FPGA 10K LE 780-FBGA | Intel
料号： EP1S10F780C5 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $619.78 | $619.78 |
| 10 | $580 | $5,800.00 |
| 100 | $540 | $54,000.00 |
| 500 | $495 | $247,500.00 |
| 1,000 | $460 | $460,000.00 |
EP1S10F780C5 概述
An FPGA (Field-Programmable Gate Array) is a semiconductor integrated circuit composed of configurable logic blocks (LBs/LEs), programmable interconnect, and dedicated hard IP such as block RAM, DSP blocks, PLLs, and high-speed transceivers. The LDO -> linear regulator analogy does not apply here; instead, FPGAs sit at the top of the programmable-logic hierarchy, beneath ASICs and above discrete glue logic, enabling hardware-level parallelism with software-style reconfigurability. The Stratix family specifically introduced dedicated TriMatrix memory, DSP blocks with 9-bit x 9-bit embedded multipliers, and a high-speed I/O architecture supporting LVDS, HSTL, SSTL, and LVPECL signaling.
Key features of the EP1S10F780C5 include up to 28 DSP blocks providing 224 (9-bit x 9-bit) embedded multipliers, dedicated on-chip memory with up to 10 Mbits of RAM distributed across M512, M4K, and M-RAM blocks, and support for multiple I/O standards on each user I/O pin. The 426 user I/Os provide ample connectivity for parallel buses, memory interfaces, and high-speed serial links via external PHY devices. Industrial-grade and commercial-grade temperature variants are available within the family.
Architecturally, the EP1S10F780C5 leverages Stratix's row-and-column interconnect fabric with DirectDrive technology, ensuring predictable timing closure across the device. The 0.13 micrometer process node and 1.5 V core supply minimize dynamic power while preserving the 500 MHz internal operating frequency capability typical of the family. Embedded memory blocks can be cascaded to form FIFOs and dual-port buffers without consuming logic resources, freeing LEs for state machines and datapath logic.
Typical applications include high-speed image processing, telecommunications baseband processing, software-defined radio (SDR), industrial motor control, and ASIC prototyping. The combination of embedded multipliers and block RAM makes the EP1S10F780C5 particularly well-suited to FFT, FIR filter, and forward-error-correction implementations.
When designing with the EP1S10F780C5, observe the Stratix configuration guidelines: route dedicated configuration pins (nCONFIG, nSTATUS, CONFIG_DONE, MSEL, DCLK) carefully, and supply the 1.5 V core rail through a low-noise LDO such as the TPS7A4701. Use multiple decoupling capacitors per the reference design to suppress simultaneous-switching noise on the FC-FBGA power balls.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and design notes not found on any single distributor page.
直接替换替代料： EP1S10F780C5 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： EP1S10F780C5 （相同外形与封装尺寸） ——差异在于 Package, Process Technology, Speed Grade, Operating Temperature, User I/O Count.
快速对比工具——选择替代料号进行并排对比：
EP1S10F780C7N
✅ 直接替换✓ 有现货
$96.2 / 个
查看数据手册 →EP1S10F780C5N
✅ 直接替换✓ 有现货
$195 / 个
查看数据手册 →EP1S10F780C6
✅ 直接替换✓ 有现货
$118 / 个
查看数据手册 →EP1S10F780C7
✅ 直接替换✓ 有现货
$128.4 / 个
查看数据手册 →EP1S20F780C5
✅ 直接替换✓ 有现货
$645 / 个
查看数据手册 →EP1S10F780C5 最大额定值与电气特性
| Family | Stratix |
| Logic Elements (LEs) | 10,570 |
| Total RAM Bits | 920,448 |
| DSP Blocks | Up to 28 |
| Embedded Multipliers | Up to 224 (9-bit x 9-bit) |
| User I/Os | 426 |
| Process Technology | 0.13 micrometer, all-layer copper CMOS, SRAM |
| Core Supply Voltage | 1.5 V |
| Internal Operating Frequency | Up to 500 MHz |
| 封装 | 780-ball FineLine BGA (FC-FBGA) |
| LABs (Logic Array Blocks) | 1057 |
| Configuration | SRAM-based, volatile |
| Operating Temperature Grade | Commercial (C5 speed grade) |
| Speed Grade | C5 |
EP1S10F780C5 780-ball fineline bga (fc-fbga) 引脚配置指南
EP1S10F780C5（780-ball fineline bga (fc-fbga) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： EP1S10F780C5.
请参阅 数据手册 以查看完整引脚配置。
典型应用
EP1S10F780C5 适用于 6 应用s: Software-Defined Radio (SDR) Baseband, High-Speed Image and Video Processing, Telecommunications Baseband Processing, ASIC Prototyping and Emulation, Industrial Motor Control and Drive, Medical Imaging and Diagnostic Equipment.
Software-Defined Radio (SDR) Baseband
The EP1S10F780C5's combination of 224 (9-bit x 9-bit) embedded multipliers and 920 Kbits of TriMatrix memory makes it well-suited for SDR baseband processing. Its 500 MHz internal fabric supports FIR filters, FFTs, and channelization at sample rates beyond 100 MSPS. The 426 user I/Os route digital IF to external ADC/DAC companion parts such as the AD9230 or AD9747. Designers can implement multi-channel DDC/DUC chains and benefit from deterministic latency through dedicated DSP blocks rather than soft multipliers.
推荐
High-Speed Image and Video Processing
With 426 user I/Os and 1,057 LABs, the EP1S10F780C5 can ingest parallel video streams from external image sensors and perform real-time processing such as Bayer demosaicing, color space conversion, and edge detection. The M4K and M-RAM blocks serve as line buffers and frame stores, while the DSP blocks accelerate 2D convolution kernels. Designers pair the FPGA with DDR SDRAM controllers implemented in soft logic, and use LVDS I/O standards to receive pixel data at hundreds of MHz.
推荐
Telecommunications Baseband Processing
The EP1S10F780C5 supports Turbo decoding, Viterbi decoding, and channel estimation for 3G/4G base-station baseband implementations. Its DSP blocks run 9-bit x 9-bit multipliers at high speed, enabling soft-decision decoding of convolutional and Turbo codes with low bit-error rates. The TriMatrix memory stores soft-bit metrics and interleaved data blocks. Its LVDS and HSTL I/O standards connect seamlessly to analog front-end ICs and backplane SERDES devices.
推荐
ASIC Prototyping and Emulation
The EP1S10F780C5 is frequently used as a building block in multi-FPGA ASIC prototyping platforms. Each device can emulate 5 to 10 million gates of an ASIC design depending on memory and DSP usage. The 426 I/Os implement chip-to-chip time-domain-multiplexed traces, while the SRAM-based configuration allows rapid RTL re-spin for iterative bring-up. Designers use Quartus II to partition and place the ASIC netlist across an array of EP1S10 devices on a prototyping board.
推荐
Industrial Motor Control and Drive
The EP1S10F780C5 implements field-oriented control (FOC) algorithms for three-phase AC induction and PMSM motors. Its DSP blocks execute Park/Clarke transforms and PI controllers at the PWM switching frequency (typically 10 to 20 kHz), while the LABs handle state machines and protection logic. The 426 I/Os interface with gate drivers, encoders, and isolated current sensors. Industrial designs may migrate to the EP1S10F780C7N for extended temperature operation.
推荐
Medical Imaging and Diagnostic Equipment
Ultrasound beamforming, CT reconstruction kernels, and patient-monitoring DSP are common EP1S10F780C5 deployments. The 224 embedded multipliers support real-time beam steering and apodization at 64-channel probe densities, while the abundant I/Os interface with high-speed ADCs such as the AD9271. Designers meet medical safety standards (IEC 60601) by pairing the FPGA with reinforced-isolated power and signal chains. Obsolescence has driven many designs to migrate to Cyclone V or Stratix V.
推荐
推荐产品汇总
工程参考数据： EP1S10F780C5 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | EP1S10F780C7N | EP1S10F780C5N | EP1S10F780C6 | EP1S10F780C7 | EP1S20F780C5 |
|---|---|---|---|---|---|---|
| Package | 780-ball FC-FBGA | 780-ball FC-FBGA (same) | 780-ball FC-FBGA (same) | 780-ball FC-FBGA (same) | 780-ball FC-FBGA (same) | 780-ball FC-FBGA (same) |
| Brand | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) |
| Logic Elements | 10,570 LEs | 10,570 LEs (same die) | 10,570 LEs (same die) | 10,570 LEs (same die) | 10,570 LEs (same die) | 18,460 LEs (+74%) |
| Embedded RAM | 920,448 bits | 920,448 bits (same die) | 920,448 bits (same die) | 920,448 bits (same die) | 920,448 bits (same die) | 1,669,344 bits (+81%) |
| User I/Os | 426 | 426 (same) | 426 (same) | 426 (same) | 426 (same) | 426 (same) |
| DSP Blocks | Up to 28 | Up to 28 (same die) | Up to 28 (same die) | Up to 28 (same die) | Up to 28 (same die) | Up to 52 (+86%) |
| Speed Grade | C5 | C7 (slower) | C5 (same) | C6 (between) | C7 (slower) | C5 (same) |
| Temperature Grade | Commercial | Industrial | Commercial (same) | Commercial (same) | Commercial (same) | Commercial (same) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete |
关键差异点
- Highest speed grade in EP1S10 780-FBGA family （对比 EP1S10F780C7 / EP1S10F780C7N)
- Pin-compatible density upgrade path within Stratix family （对比 EP1S20F780C5)
- Integrated DSP blocks for parallel arithmetic （对比 EP1S20F780C5)
设计说明
Estimated: at 500 MHz internal clock with 80% logic utilization, the EP1S10 core draws approximately 1.2 to 1.8 A from the 1.5 V rail (1.8 to 2.7 W), and the I/O banks draw up to 0.5 A per bank from VCCIO supplies. Use a low-noise 1.5 V LDO such as the TPS7A4701 for the core rail and a TPS7A3301 for any negative bias. Place 100 nF X7R decoupling capacitors within 5 mm of every power pin and 10 uF bulk caps per power plane region.
The 780-ball FC-FBGA package uses a 1.0 mm ball pitch; route signals on inner layers with microvia stackups. Match trace lengths within +/- 50 mil for LVDS pairs and within +/- 100 mil for source-synchronous DDR interfaces. Maintain a continuous ground plane on layer 2 and a continuous 1.5 V plane on layer 3 directly under the BGA to minimize power inductance. Use 8 or more PCB layers for signal integrity at 500 MHz.
Estimated: at full DSP utilization (all 28 DSP blocks toggling), the device may dissipate 3 to 5 W. The FC-FBGA package has a theta-JA of approximately 12 C/W with a 4-layer JEDEC test board, leading to a junction-temperature rise of 36 to 60 C above ambient. Provide forced-air cooling (200 LFM minimum) for industrial-temperature operation, or migrate to the EP1S10F780C7N variant and limit to commercial junction temperatures.
Do not apply power before MSEL configuration-mode pins are properly tied - floating MSEL pins can put the device into JTAG-only mode and cause configuration failures. Use a series resistor on TCK for JTAG chain integrity. The EP1S10F780C5's SRAM configuration is volatile; pair it with an EPCQ64 or similar AS-mode configuration memory so the bitstream reloads after power-up. Do not exceed the 1.6 V absolute-maximum VCCINT limit.
合规信息
The original Stratix family predates widespread RoHS enforcement; lead-free variants are identified by the 'N' suffix (EP1S10F780C5N, EP1S10F780C7N). Specific RoHS/REACH/AEC-Q100 compliance data was not present in the verified web data - consult the manufacturer's declaration or the lot-specific certificate of conformance.
