H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix
MPN: H5ANAG8NCR-VKC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $35.16 | $35.16 |
| 10 | $33.4 | $334.00 |
| 100 | $31.64 | $3,164.00 |
| 500 | $29.89 | $14,945.00 |
| 1,000 | $28.13 | $28,130.00 |
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View Datasheet →H5ANAG8NCR-VKC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 16 Gbit |
| Supply Voltage Range | 1.14 V to 1.26 V |
| Nominal Supply Voltage | 1.2 V |
| Operating Temperature | 0C to +85C |
| Package | FBGA-78 |
| Mounting Type | Surface Mount |
| Self Refresh | Auto self-refresh |
| Data Mask Function | Yes |
| On-Chip Termination | Dynamic ODT |
| Reset Function | Asynchronous reset |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC / CA Parity | Yes |
| Auto Precharge | Yes |
| RoHS Status | Compliant |
H5ANAG8NCR-VKC fbga-78 Pin Configuration Guide
Complete pinout information for H5ANAG8NCR-VKC (fbga-78 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5ANAG8NCR-VKC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5ANAG8NCR-VKC is suitable for 6 applications: Server DIMM Subsystems, Industrial Control Main Memory, Networking Line Cards, Embedded Computing Modules, Test and Measurement Instruments, Automotive-Adjacent and Rugged Compute.
Server DIMM Subsystems
The H5ANAG8NCR-VKC fits registered DIMM and small-outline RDIMM designs where 16Gb density per component maximizes capacity per module. Its 1.2V rail cuts per-bit power roughly 20% versus DDR3, and family CRC plus CA parity protects command/address integrity on heavily loaded server buses, per SK hynix feature listings. Write leveling supports the fly-by clock topology required on registered modules, while dynamic ODT maintains eye margins at 2666-class data rates across up to 18 stacked components per RDIMM. Thermal design must account for stacked configurations, where mid-bank components see 85C limits approached; auto self-refresh temperature compensation (SRT) adjusts refresh rate internally to preserve retention without controller intervention.
Recommended
Industrial Control Main Memory
In PLCs, industrial PCs, and motion controllers, the H5ANAG8NCR-VKC provides dense main memory on the 1.14V-1.26V DDR4 rail. The 0C to +85C operating range suits fanless enclosures, and auto self-refresh with asynchronous reset simplifies power-fail recovery sequencing in systems that must resume quickly after brownout. The FBGA-78 package's low profile (about 1.2mm) fits conduction-cooled designs, and dynamic ODT relaxes trace-length matching on four-layer industrial boards. Designers should derate the 85C ceiling against enclosure ambient and pair the DRAM with a PMIC providing tracked VTT to keep termination noise within margin during inverter-driven EMI events common on factory floors.
Recommended
Networking Line Cards
Switch, router, and 5G transport line cards use the H5ANAG8NCR-VKC as packet-buffer and table memory. The family's 2666-class speed grade and four-bank-group architecture sustain the low-latency, high-random-access profile that queue management demands, while CA parity guards against command corruption from high fan-out backplanes. A 16Gb device reduces component count versus 8Gb parts (such as H5AN8G8NCJR-VKC), shrinking buffer-subsystem area on crowded cards. CRC-enabled links tolerate the noisy environment near gigabit SerDes; nevertheless, keep DRAM fly-by stubs away from switch ASIC power islands and verify eye diagrams at the full data rate with the production stack-up before release.
Recommended
Embedded Computing Modules
COM Express and SMARC modules embed the H5ANAG8NCR-VKC down on the carrier-side memory array to deliver 8-16GB capacities in compact footprints. The 1.2V rail integrates cleanly with module PMICs, and ZQ calibration plus on-die termination let four-layer substrates meet 2666-class timing when routed with length-matched fly-by stubs. Write leveling automates the DQS-DQ alignment the controller needs, reducing firmware bring-up effort. For extended-temperature module variants, qualify the UHC or RDC suffix grades listed on this page. Startup code must sequence asynchronous reset before MRS writes; most x86 and Arm embedded SoC memory reference codes for DDR4 handle this automatically.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream acquisition data into DDR4 buffers, and the H5ANAG8NCR-VKC's 16Gb density extends record length per memory channel. Its CRC and write-leveling features maintain integrity at 2666-class rates in instruments where multiple memory controllers run concurrently on shared clock trees. The 78-ball FBGA suits dense mezzanine boards, and the 0C to +85C range covers typical benchtop thermal envelopes. Design attention should focus on burst-bandwidth guaranteeing: interleave two devices on independent 32-bit channels to exceed 5GB/s sustained capture throughput, and add thermal spreading copper under the packages to limit die temperature during long, continuous acquisitions.
Recommended
Automotive-Adjacent and Rugged Compute
Though commodity DDR4 is not AEC-Q100 qualified, the H5ANAG8NCR-VKC serves non-safety rugged compute nodes such as telematics gateways, off-highway displays, and edge AI inference boxes operating within 0C to +85C. The 1.2V rail reduces thermal load in sealed enclosures, and auto self-refresh with temperature-compensated refresh rate preserves data across wide ambient swings. Conformal-coated assemblies benefit from the FBGA's solder-maskable ball field. For cold-crank environments below 0C, select an extended-grade suffix (UHC/RDC) from this page instead, and validate power-up reset timing against battery-sag transients with a scope capture of the 1.14V minimum rail during engine start.
Recommended
Recommended Products Summary
Engineering reference data for H5ANAG8NCR-VKC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5ANAG8NCMR-VKC | H5ANAG8NCR-UHC | H5ANAG8NCJR-XNC |
|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Operating Temperature | 0C to +85C | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Speed Grade | VKC (2666-class bin) | CMR die revision bin | UHC bin | XNC bin |
| CRC / CA Parity | Yes | Yes | Yes | Yes |
| Dynamic ODT / Write Leveling | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
| Approx. Unit Price (qty 1) | $35.16 (family-derived, as of 2026-09-05) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 16Gb density per component (vs H5AN8G8NCJR-VKC)
- CRC and CA parity on the command/address bus (vs H5ANAG8NCR-UHC)
- 1.2V operation with dynamic ODT and write leveling (vs MT40A2G8AG-062E)
Design Notes
Route DDR4 address/command lines in fly-by topology with per-byte write leveling enabled; the H5ANAG8NCR family provides the write-leveling feature specifically for this purpose. Keep DQ/DQS stubs under 5mm mismatch within each byte lane and reference them to a solid ground plane. At 2666-class data rates, enable dynamic ODT during writes to absorb reflections from other loads on the bus. Validate eye diagrams on the production stack-up, not the bring-up board, since plane splits near the DRAM array can close the DQ eye by 20-30%.
Supply 1.2V VDD within 1.14V-1.26V using a DDR PMIC with 1-2% accuracy, and generate VTT with a dedicated termination regulator capable of sinking and sourcing the full dynamic ODT current of all components. DDR4 also requires a 2.5V VPP rail for the cell-charge pump; keep it sequenced with VDD per the manufacturer power-up specification. Place 10uF bulk plus at least four 0.1uF ceramic capacitors per component, and plane VTT locally under the termination resistors to control mid-frequency impedance.
Do not issue MRS commands before the asynchronous reset has been asserted and released per the DDR4 power-ramp sequence - doing so is the most common cause of untrained or dead DRAM in first-article builds. Ensure ZQ calibration is executed after reset and re-run on significant temperature drift. When substituting speed grades (VKC to UHC/RDC/PBC), update controller timing registers and boot-time training parameters; a controller programmed only for the VKC bin may fail training on a slower or faster grade even though the footprint is identical.
Compliance Information
RoHS compliance stated in JLCPCB listing for the H5ANAG8NCR family. REACH, halogen-free, and conflict-minerals declarations not found in verified data.
