IS43TR16256AL-107MBL vs K4B4G1646E-BYMATCV 对比
详细并排对比 IS43TR16256AL-107MBL 出自 ISSI, Integrated Silicon Solution Inc 和 K4B4G1646E-BYMATCV 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ 量产中
规格对比
| 参数 | IS43TR16256AL-107MBL | K4B4G1646E-BYMATCV |
|---|---|---|
| 品牌 | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.00 | $5.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | 4 Gbit (256M x 16) |
| 存储组织 | 256M x 16 | — |
| 电源电压 | 1.35 V | 1.35 V |
| 数据速率 | 1866 MT/s | 1866 Mbps |
| Clock Frequency | 933 MHz | — |
| Access Time | 20 ns | — |
| CAS 延迟 | 13 | Programmable (e.g., 13, 12, 11) |
| 接口 | Parallel | — |
| 封装 | 96-TWBGA (9x13 mm) | 96-ball FBGA |
| 工作温度 | 0°C to +95°C (case) | — |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Compliant | Compliant |
| Burst Length | 8 and 4 (with burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (ODT) | — |
| I/O Voltage (VDDQ) | — | 1.35 V |
| 引脚数 | — | 96 |
| 工作温度范围 | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |