IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
Référence : IS43TR16256AL-107MBL ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $6 | $6 000,00 |
IS43TR16256AL-107MBL Présentation
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, networking equipment, and industrial computing where power efficiency is critical.
Key features include a parallel interface with 933 MHz clock speed, 20 ns access time, and support for 1866MT/s data rate. The device supports various burst lengths (8 and 4 with burst chop), on-die termination (ODT), and programmable CAS latency. It operates over a temperature range of 0°C to +95°C (case) and is RoHS compliant.
The IS43TR16256AL-107MBL utilizes advanced DRAM process technology, providing high reliability and performance. It features auto-refresh and self-refresh modes, which are essential for low-power standby operation. The 96-ball TWBGA package ensures excellent thermal and electrical performance, making it suitable for space-constrained designs.
Typical applications include networking routers and switches, enterprise storage systems, industrial PCs, and embedded computing platforms. Its low voltage and high density make it ideal for memory-intensive applications where power efficiency is a priority.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity at high speeds, including matched trace lengths and controlled impedance.
Alternatives de remplacement direct pour IS43TR16256AL-107MBL — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IS43TR16256AL-107MBL (même facteur de forme et même empreinte) — différant par Package, Data Rate, Burst Length, Supply Voltage, CAS Latency.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IS43TR16256AL-107MBLI
✅ Remplacement direct✓ En stock
$2 / unité
Voir la fiche technique →IS43TR16256BL-107MBL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IS43TR16256AL-125KBL
✅ Remplacement direct✓ En stock
$5.6 / unité
Voir la fiche technique →IS43TR16256AL-107MBLI-TR
✅ Remplacement direct✓ En stock
$5.6 / unité
Voir la fiche technique →MT41K256M16HA-107G:E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$4 / unité
Voir la fiche technique →K4B4G1646E-BYMATCV
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.9 / unité
Voir la fiche technique →H5TC4G63AFR-PBR
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.9091 / unité
Voir la fiche technique →IS43TR16256AL-107MBL Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35 V |
| Débit de données | 1866 MT/s |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Latence CAS | 13 |
| Interface | Parallel |
| Boîtier | 96-TWBGA (9x13 mm) |
| Température de fonctionnement | 0°C to +95°C (case) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT) |
Configuration des broches de IS43TR16256AL-107MBL
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — DQ ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | CK — Clock input |
| Broche E2 | CK# — Complementary clock input |
| Broche E3 | CKE — Clock enable |
| Broche F1 | CS# — Chip select |
| Broche F2 | RAS# — Row address strobe |
| Broche F3 | CAS# — Column address strobe |
| Broche G1 | WE# — Write enable |
| Broche G2 | ODT — On-die termination |
| Broche G3 | A0 — Address input 0 |
Applications typiques
IS43TR16256AL-107MBL convient pour 6 applications: Networking Routers and Switches, Enterprise Storage Systems, Industrial PCs, Embedded Computing Platforms, Telecommunications Equipment, Consumer Electronics.
Networking Routers and Switches
The IS43TR16256AL-107MBL provides high-density, low-power memory for packet buffering and routing tables in networking equipment. Its 1866MT/s data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on infrastructure. The 96-TWBGA package fits compact line cards, and the wide temperature range supports reliable operation in telecom environments.
Recommandé
Enterprise Storage Systems
In enterprise storage, the IS43TR16256AL-107MBL serves as cache or buffer memory, offering high bandwidth and low latency. Its 4Gb density and 256Mx16 organization enable efficient data caching, while the 1.35V supply minimizes power in large arrays. The device's auto-refresh and self-refresh modes support low-power standby, crucial for energy-efficient data centers.
Recommandé
Industrial PCs
The IS43TR16256AL-107MBL is ideal for industrial PCs requiring robust memory in harsh environments. Its 0°C to +95°C case temperature range ensures reliable operation in factory floors, and the 1.35V low voltage reduces heat generation. The 96-TWBGA package provides excellent thermal performance, and the high data rate supports demanding industrial applications like machine vision and process control.
Recommandé
Embedded Computing Platforms
For embedded systems, the IS43TR16256AL-107MBL offers a balance of density, speed, and power efficiency. Its 4Gb capacity supports complex applications like real-time data processing, while the 1.35V operation extends battery life in portable devices. The device's small footprint and surface-mount package simplify PCB design, and its compatibility with standard DDR3L controllers makes integration straightforward.
Recommandé
Telecommunications Equipment
In telecom base stations and switches, the IS43TR16256AL-107MBL provides reliable memory for signal processing and protocol handling. Its high data rate and low power consumption are critical for 24/7 operation, and the wide temperature range ensures performance in outdoor enclosures. The 96-TWBGA package offers robust solder joints for vibration-prone environments.
Recommandé
Consumer Electronics
The IS43TR16256AL-107MBL is suitable for high-end consumer devices like smart TVs and gaming consoles, where memory bandwidth and power efficiency are paramount. Its 1866MT/s data rate supports smooth 4K video playback, while the 1.35V supply reduces heat in slim enclosures. The device's small package enables compact designs, and its RoHS compliance meets global environmental standards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IS43TR16256AL-107MBL — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IS43TR16256AL-107MBLI | IS43TR16256BL-107MBL | MT41K256M16HA-107G:E | K4B4G1646E-BYMATCV |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) |
| Brand | ISSI | ISSI | ISSI | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- Industrial temperature grade option (vs IS43TR16256BL-107MBL)
- High data rate at low voltage (vs IS43TR16256AL-125KBL)
- Cross-brand availability (vs MT41K256M16HA-107G:E)
Notes de conception
For DDR3L at 1866MT/s, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The IS43TR16256AL-107MBL requires a clean 1.35V supply. Use a dedicated voltage regulator with low output noise and fast transient response. Place a 10uF bulk capacitor and multiple 0.1uF ceramic capacitors near the VDD pins. Ensure the VDDQ supply is separate and well-filtered to prevent data corruption.
The device operates up to +95°C case temperature. In high-ambient environments, ensure adequate airflow or a heatsink. The 96-TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For a 1W power dissipation, the junction temperature rise is 20°C, so keep ambient below 75°C to stay within limits.
Informations de conformité
RoHS compliance confirmed from Mouser and ISSI datasheet. Other compliance data not provided.
