K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
料号： K4A4G165WF-BCRC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $20.75 | $20.75 |
| 10 | $19.7 | $197.00 |
| 100 | $18.65 | $1,865.00 |
| 500 | $17.9 | $8,950.00 |
| 1,000 | $17.08 | $17,080.00 |
K4A4G165WF-BCRC 概述
A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock, doubling bandwidth versus DDR3 at the same clock rate. Within the memory hierarchy, DDR4 SDRAM sits as the main volatile working memory in embedded systems, below caches but above storage, and belongs to the broader DRAM family of memory ICs used for firmware execution, buffering, and data logging.
Key features of the K4A4G165WF include Samsung's 4Gb F-die core, a wide operating voltage window of 1.14V to 1.26V, and supported functions such as auto precharge, asynchronous reset, CRC and CA parity, ZQ calibration, dynamic on-die termination (ODT), and data mask (DM) for partial-write operations. The 16-bit data width reduces the number of devices needed on 16-bit buses common in embedded and industrial designs.
Architecturally, the device uses an 8-bank array with bank-group addressing, burst lengths of 8 with BL4 MRS option, and programmable CAS latency per the DDR4 JEDEC interface conventions implemented by Samsung. The -BCRC speed grade is rated for DDR4-2400 operation at the standard 0C to +95C commercial-ambient range, with on-die termination and output driver strength calibrated via the ZQ pin.
Typical applications include industrial controllers, computing modules (COM Express, SOM), networking equipment line cards, set-top boxes, and replacement sourcing for DDR3L-based designs migrating to DDR4 for lower power - Samsung cites roughly 25% lower power versus DDR3 at 1.2V versus 1.5V.
Design consideration: DDR4 signal integrity requires length-matched fly-by routing of CK/CA and per-byte-line DQS strobe tuning; follow Samsung's layout guidelines for ZQ resistor placement (240 ohm, 1% tolerance) and VTT termination.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes not found in the Samsung datasheet.
直接替换替代料： K4A4G165WF-BCRC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4A4G165WF-BCRC （相同外形与封装尺寸） ——差异在于 RoHS Status, Density, Package, Auto Precharge, ZQ Calibration.
快速对比工具——选择替代料号进行并排对比：
K4A4G165WF-BCWE
✓ 有现货
$10.65 / 个
查看数据手册 →K4A4G165WF-BCTD
✓ 有现货
$8.2031 / 个
查看数据手册 →K4A4G165WE-BCTD
✓ 有现货
$11.38 / 个
查看数据手册 →MT40A256M16GE-075E:B
✓ 有现货
$3.95 / 个
查看数据手册 →K4A4G165WE-BCRC
📋 参考替代料（不在目录中）
K4A4G165WF-BCRC 规格参数
| 存储器类型 | DDR4 SDRAM |
| Density | 4 Gb |
| 存储组织 | 256M x 16 |
| Speed Grade | DDR4-2400 |
| 电源电压 | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V |
| 封装 | FBGA-96 (TFBGA) |
| Die Type | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | 8 banks, bank groups |
| Data Mask | Supported (DM) |
| CRC / CA Parity | Supported |
| ZQ Calibration | Supported |
| Dynamic ODT | Supported |
| Auto Precharge | Supported |
| Asynchronous Reset | Supported |
| 工作温度 | 0C to +95C |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
K4A4G165WF-BCRC fbga-96 (tfbga) 引脚配置指南
K4A4G165WF-BCRC（fbga-96 (tfbga) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： K4A4G165WF-BCRC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4A4G165WF-BCRC 适用于 6 应用s: Industrial Controllers and PLCs, Embedded Computing Modules (SOM/COM), Networking and Communication Equipment, Consumer Set-Top Boxes and Smart TV Platforms, Firmware Boot and Data Logging Storage Systems, Replacement Sourcing and DDR3-to-DDR4 Migration.
Industrial Controllers and PLCs
The K4A4G165WF-BCRC fits industrial controllers where deterministic 4Gb-class working memory at low power is required: the 1.2V supply (1.14V to 1.26V) cuts DRAM power roughly 25% versus 1.5V DDR3, reducing heat inside sealed control cabinets, while the 256M x16 organization matches the 16-bit memory buses common on embedded MPUs. In a typical PLC main board, the DDR4 sits on the controller's dedicated memory interface with ZQ calibration (240 ohm 1% resistor) and dynamic ODT simplifying termination. The asynchronous reset feature allows the memory to be re-initialized independently of the power tree, improving fault recovery. Note the 0C to +95C rating; for cold or outdoor installations, specify the IT-grade -BITD variant of the same family.
推荐
Embedded Computing Modules (SOM/COM)
System-on-module and COM Express designs use the K4A4G165WF-BCRC as main memory because its 96-ball FBGA footprint and JEDEC-standard x16 ballout allow second sourcing with zero PCB change. Four devices provide 2 GB of 32-bit or 64-bit-wide memory at DDR4-2400, delivering up to 19.2 GB/s theoretical bandwidth per 64-bit bus - sufficient for Linux/RTOS application loading and video frame buffering. The CRC and CA parity features supported by the device help detect command/address errors in electrically noisy environments. Layout must follow fly-by CK/CA topology with per-byte DQS length matching; the F-die's on-die termination reduces external component count versus DDR3, freeing board area on dense modules.
推荐
Networking and Communication Equipment
Line cards, switches, and gateways buffer packet traffic in DDR4, and the K4A4G165WF-BCRC's DDR4-2400 speed grade with bank-group architecture enables high random-access throughput for queue management. The 16-bit organization lets designers populate narrow independent memory channels per port group, isolating traffic domains. Samsung's supported CRC/CA parity and ZQ calibration features improve reliability in 24/7-operating network equipment, and the 1.2V rail simplifies shared power-plane design with other low-voltage silicon. Effective bandwidth depends on page-hit locality; packet-buffer engines typically achieve 60-80% efficiency, so provision one device per 16-bit channel per 1-2 Gbps of sustained traffic as a conservative starting estimate.
推荐
Consumer Set-Top Boxes and Smart TV Platforms
Set-top box and smart TV SoCs commonly expose a 16-bit DDR4 channel, and the K4A4G165WF-BCRC supplies a single-device 4Gb solution at DDR4-2400 - adequate for 4K video buffering and application memory in cost-optimized designs. The 1.2V operation and small 96-ball FBGA footprint (roughly 78 mm x 135 mm class package) suit thin consumer housings with limited airflow; total DRAM power at moderate utilization stays in the sub-watt range, so no heatsinking is required. The data mask (DM) function supports efficient partial-frame writes for graphics compositing. Because consumer build volumes are high, the drop-in compatibility with WF/WE family variants (BCWE, BCTD) provides valuable supply-chain flexibility.
推荐
Firmware Boot and Data Logging Storage Systems
For data storage, firmware boot, and embedded logging applications, the K4A4G165WF-BCRC serves as execution memory and write buffer in front of NAND flash or eMMC. Its 4Gb capacity hosts Linux kernel plus root filesystem loaded at boot, while the DDR4-2400 bandwidth accelerates log aggregation before periodic flash commits. The asynchronous reset function lets a supervisor MCU recover the DRAM without full system power cycling - valuable in data loggers that must preserve configuration state. ZQ calibration maintains signal integrity across temperature drift in unconditioned logging environments (0C to +95C rating). Designers should size buffering RAM as 2-4x the largest expected single write burst between flash flush cycles to prevent data loss on power faults.
推荐
Replacement Sourcing and DDR3-to-DDR4 Migration
The K4A4G165WF-BCRC is a frequent target for replacement sourcing as DDR3 inventory ages: Samsung's DDR4 family operates at 1.2V versus 1.5V for DDR3, consuming roughly 25% less power per Samsung's DDR4 portfolio data, while roughly doubling per-pin bandwidth. Legacy x16 DDR3 sockets (96-ball class footprints) migrating to DDR4 typically adopt this part or its F-die/WE-family siblings. The availability of multiple drop-in variants - K4A4G165WF-BCWE, K4A4G165WF-BCTD, E-die K4A4G165WE-BCRC, and cross-brand Micron MT40A256M16GE-075E:B with the same JEDEC x16 ballout - gives procurement teams multiple qualified sources for continuity. Note DDR4 is not backward compatible with DDR3 controllers; a controller redesign is required for genuine migrations.
推荐
推荐产品汇总
工程参考数据： K4A4G165WF-BCRC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4A4G165WF-BCWE | K4A4G165WF-BCTD | K4A4G165WE-BCRC | MT40A256M16GE-075E |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | B: FBGA-96 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | B: Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | B: 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | B: 256M x 16 |
| Speed Grade | DDR4-2400 | DDR4-2400 | DDR4-2400 | DDR4-2400 | B: DDR4-2400 (-075E, CL17) |
| Supply Voltage | 1.2 V (1.14-1.26 V) | 1.2 V | 1.2 V | 1.2 V | B: 1.2 V |
| Die Generation | Samsung F-die | Samsung F-die | Samsung F-die | Samsung E-die | B: Micron 8Gb-based die |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | B: 0C to +95C |
关键差异点
- Newer F-die core for long-term supply continuity （对比 K4A4G165WE-BCRC)
- Cross-brand second sourcing on identical JEDEC ballout （对比 MT40A256M16GE-075E:B)
- Trade-off: commercial temperature range only （对比 K4A4G085WF-BITD)
设计说明
Route DDR4 clock and command/address lines in fly-by topology with length matching within the datasheet skew budget, and match each DQS strobe pair to its byte lane of DQ. The K4A4G165WF-BCRC's on-die termination and ZQ calibration (use a 240 ohm, 1% resistor on the ZQ ball) eliminate most external termination, but impedance discontinuities from vias and connector breaks still degrade margins at DDR4-2400. Run controller write-leveling and read training on every boot; do not reuse DDR3 fixed-delay settings.
Supply the device from a dedicated 1.2V rail with the operating window of 1.14V to 1.26V per the datasheet; use a regulator such as the TI TPS54218 family with a soft-start and sufficient transient response for DRAM activation surges. Estimated: peak DDR4 activation current transients can approach several hundred mA per device at DDR4-2400; a 10uF ceramic at each VDD ball pair plus bulk capacitance near the regulator prevents droop below the 1.14V minimum floor.
Place the K4A4G165WF-BCRC within 50 mm of the controller memory interface when possible and reference all DDR4 signals to a continuous ground plane. Keep the ZQ resistor within 5 mm of the ZQ ball with a direct ground via. Avoid routing DDR4 across plane splits; split-plane crossings cause impedance discontinuities that manifest as marginal eye diagrams during temperature cycling.
Confirm the exact speed-bin suffix on incoming reels: Samsung family coding differs between -BCRC, -BCWE, and -BCTD bins, and controller training tables keyed to one bin may violate timing limits on another. Also remember the 0C to +95C ambient rating - industrial designs needing sub-zero operation must use IT-grade variants (e.g., -BITD). Do not hot-swap; DDR4 requires full power-rail sequencing via the reset pin.
合规信息
RoHS compliance per Samsung standard DRAM environmental policy and distributor listings; formal RoHS/REACH certificates should be requested from Samsung Semiconductor. Not an automotive AEC-Q100 product.
