K4AAG085WA-BCRC - 16Gb DDR4 SDRAM 2Gx8 FBGA | Samsung
料号： K4AAG085WA-BCRC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.51 | $8.51 |
| 10 | $7.9 | $79.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.65 | $3,325.00 |
| 1,000 | $6.1 | $6,100.00 |
K4AAG085WA-BCRC 概述
DDR4 SDRAM is a synchronous dynamic random-access memory and the fourth generation of the DDR (Double Data Rate) family, itself a descendant of SDRAM within the broader memory IC hierarchy (DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM). DDR4 transfers data on both clock edges, doubling effective bandwidth versus DDR3 at the same clock, and reduces operating voltage from 1.5 V/1.35 V down to 1.2 V, which cuts both dynamic power and heat in dense memory subsystems.
Key features of the K4AAG085WA-BCRC include 16 Gbit density in a x8 organization, a commercial operating temperature range of 0C to +85C (indicated by the C suffix in the speed grade), the compact 78FBGA lead-free package, and DDR4 power efficiency at 1.2 V. The 8-bit data width allows memory controllers to build wide 64-bit or wider buses with a multiple of eight devices per rank.
Architecturally, the device integrates Samsung's DDR4 core with bank-group-based data masking and burst chop support, on-die termination (ODT) for signal integrity, and standard JEDEC DDR4 command and address timing. Ball-map compatibility within the K4AAG085WA family (BCWE at 3200 Mbps, BCTD at 2400 Mbps) allows speed-grade substitutions without PCB changes.
Typical applications include PC and server DRAM modules (UDIMM, RDIMM), embedded and industrial motherboards, networking switches and routers, set-top boxes, and graphics or acceleration cards that require high-density x8 DRAM.
Design consideration: DDR4 routing requires length-matched address/command groups and fly-by termination; verify the exact maximum data rate of the BCRC speed grade against the official Samsung datasheet before setting memory-controller timing.
This page synthesizes verified distributor data, drop-in speed-grade alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： K4AAG085WA-BCRC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4AAG085WA-BCRC （相同外形与封装尺寸） ——差异在于 Interface, Package, Density, Operating Temperature, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
K4AAG085WA-BCWE
✅ 直接替换✓ 有现货
$7.24 / 个
查看数据手册 →K4AAG085WA-BCTD
✅ 直接替换✓ 有现货
$10.18 / 个
查看数据手册 →K4AAG085WA-BCPB
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.92 / 个
查看数据手册 →K4AAG085WA-BCRC 规格参数
| 存储器类型 | DDR4 SDRAM |
| Density | 16 Gbit |
| 存储组织 | 2G x 8 |
| 电源电压 | 1.2 V |
| 接口 | Parallel, DDR4 |
| 封装 | 78FBGA (78-ball Fine-Pitch Ball Grid Array) |
| 工作温度 | 0C to +85C |
| 安装类型 | Surface Mount |
| Data Width | 8 bit |
| Generation | DDR4 |
| Speed Grade Suffix | BCRC |
| On-Die Termination | Yes (DDR4 ODT) |
| Refresh | Self-refresh and auto-refresh (DDR4 standard) |
| RoHS 状态 | Compliant |
| Family | K4AAG085WA (16Gb 2Gx8 DDR4 family) |
K4AAG085WA-BCRC 78fbga (78-ball fine-pitch ball grid array) 引脚配置指南
K4AAG085WA-BCRC（78fbga (78-ball fine-pitch ball grid array) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： K4AAG085WA-BCRC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
K4AAG085WA-BCRC 适用于 6 应用s: PC and Server DRAM Modules, Embedded and Industrial Motherboards, Networking Switches and Routers, Set-Top Boxes and Smart TV Platforms, Graphics and Accelerator Cards, Test, Measurement, and Industrial PCs.
PC and Server DRAM Modules
The K4AAG085WA-BCRC is a primary component for UDIMM, RDIMM, and SODIMM memory modules, where eight or more x8 devices form a 64-bit wide rank totaling 16 GB per rank. Its 16 Gbit density halves chip count versus 8 Gbit parts, cutting assembly cost and reducing rank load on the fly-by address/command bus. Operating at 1.2 V it keeps module power within JEDEC DDR4 budgets, and the commercial 0C to +85C rating matches desktop and datacenter ambient conditions. Memory controllers at DDR4-2666 class timing must be verified against the BCRC binning table during module qualification.
推荐
Embedded and Industrial Motherboards
Industrial controllers, gateways, and embedded x86 or ARM motherboards use soldered-down K4AAG085WA-BCRC devices to provide 2 to 16 GB of DDR4 main memory without SO-DIMM sockets, improving vibration resistance and reducing height. The 78FBGA footprint suits fine-pitch BGA assembly on standard 6 to 8 layer PCBs, and 1.2 V operation simplifies the power tree (one VDD rail plus VPP). Designers should confirm the controller's maximum supported data rate against the BCRC speed bin and follow Samsung's DDR4 layout guidelines for fly-by termination and per-byte length matching.
推荐
Networking Switches and Routers
Enterprise switches, routers, and telecom appliances rely on high-density x8 DDR4 like the K4AAG085WA-BCRC for packet buffers, routing tables, and control-plane software memory. The 2G x 8 organization lets network processors build 64-bit or 128-bit buses with 8 to 16 devices, and the 16 Gbit density keeps buffer depth high while limiting component count on crowded line cards. Its 1.2 V supply and commercial temperature range fit forced-air-cooled equipment, while the BGA package withstands sustained thermal cycling typical of 24/7 networking hardware.
推荐
Set-Top Boxes and Smart TV Platforms
Broadcast and OTT set-top boxes, smart TVs, and media players use soldered DDR4 such as the K4AAG085WA-BCRC to feed 4K video decode buffers and application memory. One or two 16 Gbit x8 devices provide 2 to 4 GB, sufficient for Android TV and Linux middleware stacks, while the 1.2 V rail helps meet energy-star style standby and active power targets. The compact 78FBGA supports low-profile enclosure designs, and the commercial 0C to +85C range covers living-room thermal environments with margin.
推荐
Graphics and Accelerator Cards
Entry-level GPUs, AI inference accelerators, and FPGA accelerator cards use arrays of x8 DDR4 like the K4AAG085WA-BCRC as high-capacity workspace memory when GDDR6 bandwidth is unnecessary. Sixteen devices on a 128-bit bus yield 32 GB per card, attractive for model caching and frame buffering. The 78FBGA ball map supports dense double-sided layout, and DDR4 on-die termination eases multi-drop signal integrity at 2666 Mbps-class rates. Thermal design should budget airflow across BGA packages since sustained memory bandwidth keeps junction temperatures elevated.
推荐
Test, Measurement, and Industrial PCs
Bench instruments, industrial PCs, and data-acquisition platforms deploy the K4AAG085WA-BCRC for main memory where 16 Gbit per chip maximizes capture depth and software workspace in a limited board area. Oscilloscope and logic-analyzer backends in particular value per-chip density to stream and store long record lengths, and the x8 organization allows ECC implementation with standard 72-bit DIMM-style arithmetic. The commercial temperature rating suits laboratory and conditioned industrial enclosures; fanless or wide-temperature systems should qualify an industrial binning suffix instead.
推荐
推荐产品汇总
工程参考数据： K4AAG085WA-BCRC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4AAG085WA-BCWE | K4AAG085WA-BCTD | K4AAG085WA-BCPB |
|---|---|---|---|---|
| Package | 78FBGA | 78FBGA - same | 78FBGA - same | 78FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
关键差异点
- 16 Gbit density halves chip count per rank （对比 K4A8G085WB-BCRC)
- Lower power than DDR3 solutions （对比 K4AAG085WA-BCWE)
- Footprint-compatible speed-grade ladder （对比 K4AAG085WA-BCTD)
设计说明
Route the DDR4 interface with fly-by address/command topology and terminate the clock and CA bus at the last device. Length-match each DQS/DQ byte group tightly (per Samsung DDR4 design guide skew targets) and keep all memory traces over an unbroken ground reference. Provide 0.1 uF decoupling at each VDD/VDDQ ball pair plus bulk capacitance near the 1.2 V regulator. Break out the 78FBGA with via-in-pad or dog-bone fanout on at least a 6-layer stackup to preserve impedance control.
Budget power using the 1.2 V VDD/VDDQ rail plus the VPP rail per the datasheet IDD tables at your target data rate. Estimated: dynamic current scales roughly linearly with data rate, so a controller running a slower bin than the BCRC rating reduces IDD accordingly. Verify that the VRM can supply worst-case refresh-plus-burst current simultaneously, and sequence VPP before or with VDD per Samsung power-up requirements to avoid latch-up during initialization.
Do not substitute a slower speed grade (e.g., BCTD at 2400 Mbps) into a controller configured for a faster DDR4 rate, even though the ball maps are identical; timing violations will cause intermittent errors that fail only at temperature. Also verify the exact BCRC binning values (maximum data rate, CAS latency) in the current Samsung datasheet revision rather than assuming binning codes, since Samsung re-bins parts across die revisions. Finally, confirm MSL and baking requirements before reflow to avoid BGA delamination.
合规信息
RoHS compliance indicated by distributor listing (JLCPCB marks the K4AAG085WA-BCWE family member as RoHS FBGA-78 DRAM). Formal REACH, halogen-free, and conflict-minerals declarations must be obtained from Samsung's product compliance portal for the exact ordering code.
