KM416V4104CS-L6 - 4Mx16 EDO DRAM 60ns 3.3V TSOP-50 | Samsung
料号： KM416V4104CS-L6 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.95 | $8.95 |
| 10 | $7.85 | $78.50 |
| 100 | $6.5 | $650.00 |
| 500 | $5.4 | $2,700.00 |
| 1,000 | $4.75 | $4,750.00 |
KM416V4104CS-L6 概述
An EDO DRAM (Extended Data Out Dynamic Random-Access Memory) is a type of dynamic RAM that extends the period during which output data remains valid by latching the column address on the rising edge of /CAS, effectively enabling a new column access to begin before the previous data has been read. EDO sits in the memory hierarchy between Fast-Page Mode DRAM (FPM) and synchronous SDRAM, and was widely used in mid-1990s PCs, graphics cards, set-top boxes, and embedded systems before SDRAM displaced it.
Key features of the KM416V4104CS-L6 include a 4M x 16 organization (64 Mbit total), 4K refresh cycles at 64ms intervals, CMOS low-power design, and TSOP-II packaging optimized for SMT assembly. The L6 grade specifies a 60ns random column access and 30ns page-mode cycle time. The device also supports CAS-before-RAS (CBR) refresh and self-refresh modes, which simplify memory controller design and reduce power consumption in standby.
Typical applications for the KM416V4104CS-L6 include legacy PC main memory modules (such as the KMM366F804CS1 8Mx64 DIMM built from eight KM416V4104CS devices), set-top boxes, industrial control systems, point-of-sale terminals, embedded graphics frame buffers, and telecommunications switching equipment. The 16-bit-wide organization is well suited to bus widths common in 1990s-era microcontrollers and DSPs, including Intel i386/i486 and early PowerPC-based designs.
When designing with this part, ensure proper decoupling with 0.1 uF and 0.01 uF capacitors placed near the VCC pins, maintain signal integrity on the address/control lines, and respect the 64ms refresh window. Designers should also note that KM416V4104CS-L6 is a mature, obsolete part - active designs should consider SDRAM, DDR, or modern SRAM equivalents.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design considerations not collected in a single place by the original Samsung datasheet, helping engineers source and qualify second-source options for legacy and EOL systems.
直接替换替代料： KM416V4104CS-L6 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
KM416V4104BS-L6
✅ 直接替换📋 参考替代料（不在目录中）
KM416V4104AS-L6
✅ 直接替换📋 参考替代料（不在目录中）
KM416V4104CS-L5
✅ 直接替换📋 参考替代料（不在目录中）
KM416V4104BS-6
✅ 直接替换📋 参考替代料（不在目录中）
KM416V4104CS-L6 最大额定值与电气特性
| 存储器类型 | Volatile DRAM (EDO) |
| Memory Organization | 4M x 16 bit |
| Total Density | 64 Mbit |
| Access Time (tRAC) | 60 ns |
| Page Mode Cycle Time | 30 ns |
| Operating Voltage (VCC) | 3.3 V +/- 0.3 V |
| Refresh Cycles | 4K / 64 ms |
| Operating Mode | EDO (Extended Data Out) |
| Package Type | TSOP Type II, 50-pin |
| 工作温度 | 0 C to +70 C (commercial) |
| Technology | CMOS |
| Refresh Modes | CBR / RAS-only / Self-refresh |
| I/O Width | 16 bit |
| 安装类型 | Surface Mount |
KM416V4104CS-L6 引脚配置
| 引脚 1 | VCC — Power supply 3.3 V |
| 引脚 2 | DQ0 — Data I/O bit 0 |
| 引脚 3 | DQ1 — Data I/O bit 1 |
| 引脚 4 | DQ2 — Data I/O bit 2 |
| 引脚 5 | DQ3 — Data I/O bit 3 |
| 引脚 6 | VSS — Ground |
| 引脚 7 | DQ4 — Data I/O bit 4 |
| 引脚 8 | DQ5 — Data I/O bit 5 |
| 引脚 9 | DQ6 — Data I/O bit 6 |
| 引脚 10 | DQ7 — Data I/O bit 7 |
| 引脚 11 | VCC — Power supply 3.3 V |
| 引脚 12 | DQ8 — Data I/O bit 8 |
| 引脚 13 | DQ9 — Data I/O bit 9 |
| 引脚 14 | DQ10 — Data I/O bit 10 |
| 引脚 15 | DQ11 — Data I/O bit 11 |
| 引脚 16 | VSS — Ground |
| 引脚 17 | DQ12 — Data I/O bit 12 |
| 引脚 18 | DQ13 — Data I/O bit 13 |
| 引脚 19 | DQ14 — Data I/O bit 14 |
| 引脚 20 | DQ15 — Data I/O bit 15 |
| 引脚 21 | VSS — Ground |
| 引脚 22 | A0 — Address input 0 |
| 引脚 23 | A1 — Address input 1 |
| 引脚 24 | A2 — Address input 2 |
| 引脚 25 | A3 — Address input 3 |
| 引脚 26 | VSS — Ground |
| 引脚 27 | A4 — Address input 4 |
| 引脚 28 | A5 — Address input 5 |
| 引脚 29 | A6 — Address input 6 |
| 引脚 30 | A7 — Address input 7 |
| 引脚 31 | A8 — Address input 8 |
| 引脚 32 | A9 — Address input 9 |
| 引脚 33 | A10 — Address input 10 |
| 引脚 34 | A11 — Address input 11 |
| 引脚 35 | VSS — Ground |
| 引脚 36 | /WE — Write Enable (active low) |
| 引脚 37 | /CAS — Column Address Strobe (active low) |
| 引脚 38 | /OE — Output Enable (active low) |
| 引脚 39 | /RAS — Row Address Strobe (active low) |
| 引脚 40 | NC — Not connected |
| 引脚 41 | NC — Not connected |
| 引脚 42 | NC — Not connected |
| 引脚 43 | NC — Not connected |
| 引脚 44 | VCC — Power supply 3.3 V |
| 引脚 45 | VSS — Ground |
| 引脚 46 | NC — Not connected |
| 引脚 47 | NC — Not connected |
| 引脚 48 | NC — Not connected |
| 引脚 49 | NC — Not connected |
| 引脚 50 | VSS — Ground |
典型应用
KM416V4104CS-L6 适用于 6 应用s: Legacy PC Main Memory (EDO DIMM Modules), Set-Top Box and Consumer Electronics Memory, Industrial Control and Factory Automation Memory, Point-of-Sale Terminal and Embedded Computing, Telecommunications Switching and Routing Equipment, Graphics Frame Buffers and Display Controllers.
Legacy PC Main Memory (EDO DIMM Modules)
The KM416V4104CS-L6 was used in 8Mx64 EDO DRAM DIMM modules (KMM366F804CS1), where eight 4Mx16 devices populated 72-pin or 168-pin SIMM/DIMM sockets in late-1990s desktop PCs. Its 60 ns access time and 4K refresh at 64 ms matched the Intel i430FX/VX chipset memory controller requirements, providing main memory bandwidth of approximately 60-100 MB/s via EDO page-mode bursts. Eight parallel devices deliver the 64-bit data bus width typical of x86 systems. Designers of legacy industrial PCs, retro-computing hobbyist boards, and field-replacement modules still source this part to repair vintage systems where the original DIMM has failed.
推荐
Set-Top Box and Consumer Electronics Memory
EDO DRAM was the workhorse memory of mid-1990s set-top boxes, cable-TV receivers, and digital satellite decoders, and the KM416V4104CS-L6 fit naturally with 16-bit-wide MIPS, ARM7, and PowerPC processor buses. Its 3.3 V supply matches the low-voltage ASICs of that era, and the 16-bit organization aligns with half-word bus widths common in MPEG-2 decoder SoCs. The 4 Mbit per-chip capacity gives 8 Mbit total per chip-pair, sufficient for OS, program guide, and MPEG bitstream buffering. Repair shops still keep inventory for extending the service life of legacy consumer products where redesign is uneconomic.
推荐
Industrial Control and Factory Automation Memory
Long-life industrial controllers, programmable logic controllers (PLCs), and human-machine interfaces (HMIs) deployed in the late 1990s frequently used 4Mx16 EDO DRAM for working memory and frame buffers. The KM416V4104CS-L6's wide 0-70 C commercial operating range and CMOS low-power design suit the harsh thermal environments of factory floors and outdoor enclosures. Industrial customers maintaining equipment with 20+ year service lives rely on authorized obsolete-stock distributors to source replacements when boards fail and OEM parts are no longer available, making this part a fixture of MRO (maintenance, repair, operations) supply chains.
推荐
Point-of-Sale Terminal and Embedded Computing
Point-of-sale terminals, kiosks, and embedded computing platforms of the 1990s relied on EDO DRAM for transaction buffering, display frame storage, and printer spooling. The KM416V4104CS-L6's 4Mx16 organization matched the 16-bit data bus of 80186/386EX and PowerPC 8xx embedded processors used in these designs. CBR and self-refresh modes simplify the memory controller's standby-power strategy, important for battery-backed terminals and portable data terminals. Active long-life programs in retail, transit, and gaming often continue to deploy these terminals; OEMs and third-party repair depots stock this part to support multi-decade service contracts.
推荐
Telecommunications Switching and Routing Equipment
Public-branch exchanges (PBXs), central-office line cards, and early VoIP gateways of the late 1990s used EDO DRAM for packet buffering, voice-channel memory, and control-store storage. The KM416V4104CS-L6 fit 16-bit DSP buses from TI TMS320C5x/C6x and Motorola 56300 families, where 4 Mbit per device allowed 8 Mbit voice-channel buffers with just two chips. CBR refresh simplified maintenance software, and the 3.3 V supply matched telecom -48 V distributed-power architectures. Telecom-equipment refurbishment and parts brokers continue to source this MPN to maintain installed bases of legacy switching gear.
推荐
Graphics Frame Buffers and Display Controllers
Mid-1990s graphics accelerators, video capture cards, and LCD controller boards used 4Mx16 EDO DRAM like the KM416V4104CS-L6 to implement double-buffered frame stores. Two devices in parallel provided 32-bit pixel pipelines at 1024x768 resolution with 16-bit color depth, sufficient for office productivity and consumer multimedia. The 30 ns page-mode cycle enabled burst pixel-stream rates around 33 MHz, and the 60 ns random access supported register and palette lookups. Restorers of vintage graphics workstations, arcade boards, and medical imaging displays rely on obsolete-stock supply of this DRAM.
推荐
推荐产品汇总
工程参考数据： KM416V4104CS-L6 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | KM416V4104BS-L6 | KM416V4104AS-L6 | KM416V4104CS-L5 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | TSOP-50 (Type II) | TSOP-50 (Type II) | TSOP-50 (Type II) | TSOP-50 (Type II) |
| Organization | 4M x 16 | 4M x 16 | 4M x 16 | 4M x 16 |
| Density | 64 Mbit | 64 Mbit | 64 Mbit | 64 Mbit |
| Access Time | 60 ns | 60 ns | 60 ns | 50 ns (faster) |
| Operating Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Refresh | 4K / 64 ms | 4K / 64 ms | 4K / 64 ms | 4K / 64 ms |
| Mode | EDO | EDO | EDO | EDO |
| Silicon Revision | CS | BS | AS | CS (faster grade) |
| Lifecycle Status | Obsolete (Samsung EOL) | Obsolete (Samsung EOL) | Obsolete (Samsung EOL) | Obsolete (Samsung EOL) |
关键差异点
- Identical speed grade and pinout to BS revision - true drop-in （对比 KM416V4104BS-L6)
- Faster access time available in same package （对比 KM416V4104CS-L5)
- Wider availability than cross-brand EDO equivalents （对比 Micron MT48LC4M16A2TG)
设计说明
Estimated: at 60 ns access time and CMOS technology, active operating current is typically 60-80 mA per device, dropping to <1 mA in standby. Decouple each VCC pin (1, 11, 21, 44) with a 0.1 uF X7R ceramic capacitor placed within 3 mm of the pin, and add a single 10 uF bulk capacitor per memory bank. For battery-backed applications the CBR and self-refresh modes hold data at <1 mA, but the controller must still issue RAS-only or CBR refresh pulses every 64 ms (per Samsung KM416V4104C datasheet).
Address lines A0-A11, /RAS, /CAS, /WE, and /OE are TTL-level inputs that must be routed with matched trace lengths (within +/- 2 mm) to avoid skew on the 60 ns timing window. Use a ground plane on layer 2 directly beneath the TSOP-50 footprint and keep DQ traces matched within +/- 5 mm to preserve data-bit timing. The 50-pin TSOP-II outline is 20.0 mm x 12.4 mm with 0.5 mm pitch; allow 1.0 mm clearance to adjacent components for solder-joint reliability on legacy hand-rework and reflow processes.
Do NOT substitute an SDRAM such as MT48LC4M16A2TG for this EDO part - SDRAM has a completely different interface (synchronous, with CKE and clock) and will not work in an EDO memory controller. Verify the board's memory controller is EDO-compatible before substitution. When sourcing from obsolete distributors, request lot-date-code and traceability documentation; AS and BS revisions may have minor timing-margin differences versus CS. Finally, do not exceed the 3.6 V absolute-maximum VCC rating; this part is NOT 5 V tolerant despite sharing a TSOP-II outline with some 5 V DRAMs.
合规信息
KM416V4104CS-L6 is a legacy Samsung DRAM from the 1990s; explicit RoHS/REACH compliance statements are not present in the verified web data. Compliance values marked 'unknown' per data authenticity rules. Not AEC-Q100 qualified - consumer/commercial temperature grade only.
