MT41K256M16TW-107 IT:P - 4Gb DDR3L SDRAM 1600Mbps | Micron
料号： MT41K256M16TW-107:IT:P ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
MT41K256M16TW-107:IT:P 概述
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both rising and falling clock edges, doubling effective bandwidth compared to SDR memory. Within the memory hierarchy, DRAM sits as the main-system working memory between CPU caches and non-volatile storage, and DDR3L is the low-voltage evolution of DDR3, backward compatible with a 1.5 V supply in many implementations.
Key features of this family include the low 1.35 V core supply that reduces memory-subsystem power versus 1.5 V DDR3, on-die termination (ODT), and self-refresh operation for low standby power. The x16 organization suits systems that require narrower data buses or limited routing layers, such as embedded and industrial controllers.
Architecturally, the device is organized as 256 Mbit x 16, controlled by standard DDR3 command sets including row/column addressing, precharge, refresh, and mode register programming. DLL-based timing alignment maintains data valid windows at 1600 Mbps transfer rates in the -107 speed bin.
Typical applications include industrial embedded controllers, networking equipment, and test instrumentation that require industrial temperature range memory.
Designers should follow Micron layout guidelines for fly-by-terminated address/command routing and verify signal integrity at the target data rate.
This page adds drop-in same-family alternatives, procurement guidance, and design notes not consolidated in the manufacturer datasheet.
直接替换替代料： MT41K256M16TW-107:IT:P ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT41K256M16TW-083:IT:P
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT41K256M16TW-107:IT:TR
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT41K256M16DA-107:IT:P
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MT41K256M16TW-107:IT:P 最大额定值与电气特性
| 存储器类型 | DDR3L SDRAM |
| 存储容量 | 4 Gbit |
| 存储组织 | 256M x 16 |
| Speed Grade / Data Rate | -107 (1600 Mbps class) |
| 安装类型 | Surface Mount |
| Pb-Free Suffix | :P (lead-free per Micron suffix convention) |
| RoHS 状态 | unknown |
MT41K256M16TW-107:IT:P standard 引脚配置指南
MT41K256M16TW-107:IT:P（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT41K256M16TW-107:IT:P.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT41K256M16TW-107:IT:P 适用于 6 应用s: Industrial Embedded Controllers, Networking Equipment, Test and Measurement Instrumentation, Medical Monitoring Devices, Edge AI and IoT Gateways, Automotive-adjacent Industrial Telematics.
Industrial Embedded Controllers
Industrial embedded controllers and PLC CPUs require dependable main memory that operates across wide factory-floor temperature ranges. The MT41K256M16TW-107:IT:P fits this role because its :IT industrial temperature suffix targets extended-temperature environments, and its 1.35 V DDR3L class supply reduces memory subsystem power compared to 1.5 V DDR3. With a 4 Gbit density in a 256M x 16 organization, a single device provides sufficient working memory for RTOS-based control logic while the narrow x16 bus simplifies PCB routing on 4-6 layer industrial boards. Designers should configure the memory controller for the -107 speed bin timings taken from the Micron datasheet and enable self-refresh for low-power standby states during idle machine periods.
推荐
Networking Equipment
Switches, routers, and network-attached processing cards use DDR3L SDRAM as packet buffer and control-plane working memory. The MT41K256M16TW-107:IT:P offers 4 Gbit of density at 1600 Mbps-class transfer rates, giving sufficient bandwidth for line-rate buffering on access-tier equipment, while the x16 organization allows pairing two devices for a 32-bit bus on processor SoCs with narrower memory controllers. The industrial grade suffix supports the wide ambient ranges seen in telecom cabinets and outdoor enclosures. Proper fly-by address/command topology and per datasheet ODT settings are essential to maintain signal integrity at the target data rate; Micron's DDR3 system design guide should be followed for trace-length matching and termination strategy.
推荐
Test and Measurement Instrumentation
Bench instruments such as data acquisition units and oscilloscope front ends need large capture buffers with predictable latency. The MT41K256M16TW-107:IT:P provides 4 Gbit of DDR3L buffering at up to 1600 Mbps-class rates, enough for sustained multi-second waveform capture at moderate sample rates, and the industrial temperature grade keeps performance stable inside thermally variable test benches. Because acquisition subsystems often implement FPGA-based memory controllers, the -107 speed bin timings should be programmed exactly per the Micron datasheet, and self-refresh can park the buffer between acquisitions to cut instrument idle power. The x16 bus reduces FPGA I/O consumption versus wider x8-only designs when density per device is prioritized.
推荐
Medical Monitoring Devices
Patient monitors and portable diagnostic equipment require memory that combines adequate buffering with low power for battery-operated operation. The MT41K256M16TW-107:IT:P operates at a 1.35 V DDR3L class supply, lowering dynamic power versus legacy DDR3, and supports self-refresh for retaining data during low-power states between measurement cycles. Its 4 Gbit density accommodates trend data, waveform history, and embedded Linux workloads in bedside monitors. Medical designs value the industrial temperature suffix for transport and storage robustness. Layout should follow Micron termination guidance to avoid radiated emissions that could interfere with sensitive biopotential analog front ends, keeping the memory island separated from analog circuitry on the PCB.
推荐
Edge AI and IoT Gateways
Edge AI gateways and industrial IoT hubs aggregate sensor streams and run lightweight inference, demanding several gigabits of working memory within tight power budgets. The MT41K256M16TW-107:IT:P supplies 4 Gbit at 1.35 V DDR3L class voltage, and its industrial grade suits unconditioned enclosures in smart-factory and smart-city deployments. Two devices can form a 32-bit interface for gateway SoCs, while the 1600 Mbps-class -107 bin matches mainstream embedded processors' supported speed grades. Designers should validate controller compatibility lists, enable ODT per topology, and use self-refresh to minimize standby draw when the gateway idles between telemetry cycles, extending UPS-backed runtime during power events in remote installations.
推荐
Automotive-adjacent Industrial Telematics
Telematics and fleet-tracking head units built on industrial-grade (not yet automotive-qualified) components use DDR3L for map caching, connectivity stacks, and video buffering. The MT41K256M16TW-107:IT:P provides 4 Gbit with a 1600 Mbps-class interface and industrial temperature suffix, matching the -40C-to-extended-range expectations of harsh vehicle-mounted environments at the component level. Its x16 organization lets a cost-optimized design use one device behind a 16-bit memory controller, reducing PCB layers. Note this part is industrial grade, not AEC-Q100 qualified; for certified automotive programs select a Micron automotive DDR variant. Verify maximum data-rate derating across the temperature range using the official Micron datasheet tables.
推荐
推荐产品汇总
工程参考数据： MT41K256M16TW-107:IT:P ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT41K256M16TW-083:IT:P | MT41K256M16TW-107:IT:TR | MT41K256M16DA-107:IT:P |
|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Bin | -107 (1600 Mbps class) | -083 (faster) | -107 (identical) | -107 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM |
| Temperature Grade | Industrial (:IT) | Industrial (:IT) | Industrial (:IT) | Industrial (:IT) |
| Drop-in Compatibility | Reference | Yes - same pinout, faster bin | Yes - identical electricals | Verify ball map before reuse |
关键差异点
- Industrial temperature grade in mainstream DDR3L （对比 MT41K256M16TW-107 standard (commercial) suffix)
- Cost-optimized speed bin （对比 MT41K256M16TW-083:IT:P)
- x16 organization simplifies routing （对比 x8 DDR3L alternatives in the Micron family)
设计说明
DDR3L at 1600 Mbps-class rates requires disciplined routing: implement fly-by termination for address/command/control lines, match data-group trace lengths within datasheet skew budgets, and reference all high-speed traces to a solid ground plane. Follow Micron's DDR3 system design guidance for ODT settings per board topology. This note is general best practice derived from the DDR3L family design methodology, not a specific datasheet figure.
DDR3L operates at a 1.35 V class supply. Estimated: dynamic power scales roughly with V^2 and frequency, so running at 1.35 V instead of 1.5 V reduces dynamic memory power by roughly 19% at the same data rate (1 - (1.35/1.5)^2). Provide adequate bulk and high-frequency decoupling on VDD, VDDQ, and VTT rails; size the VTT termination regulator for peak termination current during simultaneous read/write bursts.
Do not confuse speed bins: a memory controller configured for -083 timings will violate -107 AC parameters if the slower bin is populated (and vice versa the slower part cannot meet faster timings). Also confirm the :IT industrial suffix availability early - standard commercial-grade suffixes are far more common at distributors and the industrial variant may carry longer lead times. Always verify the exact package ball map from the official Micron datasheet before footprint reuse.
合规信息
The :P suffix in Micron part numbering denotes Pb-free plating. Formal RoHS/REACH certificates were not present in the retrieved verified data and must be obtained from Micron's material declaration resources. Not AEC-Q100 automotive qualified (industrial-grade :IT suffix).
