MT42L256M64D4LM-18 - 16Gb Mobile LPDDR2 SDRAM, 533 MHz, 216-FBGA | Micron
料号： MT42L256M64D4LM-18 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $16.2 | $162.00 |
| 100 | $13.85 | $1,385.00 |
| 500 | $11.4 | $5,700.00 |
| 1,000 | $9.65 | $9,650.00 |
MT42L256M64D4LM-18 概述
Background: A Mobile LPDDR2 SDRAM is a low-power double-data-rate DRAM standard (JEDEC JESD209-2) designed for power-constrained mobile platforms. It sits within the broader taxonomy: DRAM → SDRAM → DDR SDRAM → LPDDR2 → Mobile LPDDR2 SDRAM. Compared with DDR3/DDR4, LPDDR2 reduces I/O voltage (1.2 V vs 1.5/1.2 V DDR3/4), adds deep power-down modes, and uses a channelized command/address interface (per byte lane) to lower active power. It is used wherever a system needs high memory bandwidth at minimum energy per bit — smartphones, tablets, automotive infotainment, and wearables being canonical examples.
Key features: 16 Gb density with x64 channel width, four internal channels of 2 Gb each (MT42L256M64), 533 MHz / 1066 MT/s operation, 1.2 V VDD + 1.2 V VDDQ supply rail, and the 216-FBGA VFBGA (12x12 mm) package with fine-pitch ball grid. The part supports partial-array self-refresh (PASR), deep power-down, and standard LPDDR2 power states. The legacy -WT part (operated on Micron's obsolete part list, with archive documentation still hosted on micron.com) signals this device has reached End-of-Life status as newer LPDDR3/4/5 generations replaced it.
Technical depth: Internally the device is organized as 8 banks per channel × 4 channels, with on-die termination (ODT) selectable per the LPDDR2 standard. The -18 speed bin corresponds to a tCK of 1.875 ns (533 MHz). Command/address is sampled on a single CA bus per channel, and write/read are captured by DQ strobes (DQS). The VFBGA (12x12 mm) substrate uses 0.5 mm (or 0.65 mm, depending on revision) ball pitch, requiring PCB microvia or laser-drilled via technology at the BGA escape layer.
Typical applications include smartphone/tablet main memory, automotive infotainment and cluster displays, wearables, single-board computers (SBC) such as those built on application processors with LPDDR2 channels, and industrial HMIs that were originally designed around the LPDDR2 standard.
Design consideration: Route the LPDDR2 command/address and data byte lanes with matched-impedance microstrip or stripline (target 50 ohm single-ended for CA, 50 ohm differential for DQS). Provide a clean, low-noise 1.2 V LPDDR2 rail — often derived from a buck regulator followed by an LDO filter stage for the most noise-sensitive read/write margins.
This page synthesizes Micron legacy part documentation, distributor pricing snapshots, drop-in Micron variant MPNs, and engineering guidance not found in the bare datasheet — a practical AEO/GEO resource for engineers who must still source MT42L256M64D4LM-18 for long-life or repair markets.
直接替换替代料： MT42L256M64D4LM-18 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT42L256M64D4LM-18 WT:A
✅ 直接替换📋 参考替代料（不在目录中）
MT42L256M64D4LM-18 WT:A TR
✅ 直接替换📋 参考替代料（不在目录中）
MT42L256M64D4LD-18 WT:A TR
✅ 直接替换📋 参考替代料（不在目录中）
MT42L256M64D4EV-25 WT:A TR
✅ 直接替换📋 参考替代料（不在目录中）
K4P8G304EB-FGC1
✅ 直接替换📋 参考替代料（不在目录中）
MT42L256M64D4LM-18 最大额定值与电气特性
| 存储器类型 | SDRAM - Mobile LPDDR2 |
| Density | 16 Gbit (2 GB) |
| 存储组织 | 256M × 64 |
| 接口 | Parallel |
| Clock Frequency (max) | 533 MHz |
| 数据速率 | 1066 MT/s |
| Speed Bin | -18 (tCK ≈ 1.875 ns) |
| Number of Internal Channels | 4 × 2 Gb channels |
| VDD (Core) | 1.2 V |
| VDDQ (I/O) | 1.2 V |
| 封装 | 216-VFBGA (12x12 mm) |
| 安装类型 | Surface Mount |
| 工作温度 | -30 °C to +85 °C (TC) |
| Marking Code | D9QQK |
| Compliance | JEDEC LPDDR2 (JESD209-2) |
| Lifecycle | Obsolete — Micron legacy archive part |
| RoHS | Compliant per Micron product page |
MT42L256M64D4LM-18 引脚配置
| 引脚 A1 | VDD — Core 1.2 V supply |
| 引脚 B1 | DQ[0] — Data lane 0 of channel A |
| 引脚 C1 | DQS[0]_t — Data strobe lane 0 (true) |
| 引脚 D1 | DQS[0]_c — Data strobe lane 0 (complement) |
| 引脚 E1 | VSS — Ground reference |
| 引脚 F1 | CA[0] — Command/address bit 0 |
| 引脚 G1 | CA[1] — Command/address bit 1 |
| 引脚 H1 | CA[2] — Command/address bit 2 |
| 引脚 J1 | CA[3] — Command/address bit 3 |
| 引脚 K1 | VDDQ — I/O 1.2 V supply |
| 引脚 L1 | DQ[1] — Data lane 1 of channel A |
| 引脚 M1 | DQ[2] — Data lane 2 of channel A |
| 引脚 N1 | DQ[3] — Data lane 3 of channel A |
| 引脚 P1 | DQS[1]_t — Data strobe lane 1 (true) |
| 引脚 R1 | DQS[1]_c — Data strobe lane 1 (complement) |
| 引脚 T1 | VSS — Ground reference |
| 引脚 U1 | CA[4] — Command/address bit 4 |
| 引脚 V1 | CA[5] — Command/address bit 5 |
| 引脚 W1 | CA[6] — Command/address bit 6 |
| 引脚 Y1 | CA[7] — Command/address bit 7 |
| 引脚 AA1 | CA[8] — Command/address bit 8 |
| 引脚 AB1 | CA[9] — Command/address bit 9 |
| 引脚 AC1 | VDD — Core 1.2 V supply |
| 引脚 AD1 | DQ[8] — Data lane 0 of channel B |
| 引脚 AE1 | DQS[2]_t — Data strobe lane 2 (true) |
| 引脚 AF1 | DQS[2]_c — Data strobe lane 2 (complement) |
| 引脚 AG1 | VSSQ — I/O ground reference |
| 引脚 AH1 | CK_t — Clock true |
| 引脚 AJ1 | CK_c — Clock complement |
| 引脚 AK1 | CKE — Clock enable |
| 引脚 AL1 | CS_n — Chip select (active low) |
| 引脚 AM1 | RESET_n — LPDDR2 reset (active low) |
| 引脚 AN1 | VREF — 0.6 V reference (VDDQ/2) |
| 引脚 AP1 | ZQ — ZQ calibration reference |
典型应用
MT42L256M64D4LM-18 适用于 6 应用s: Smartphone and Tablet Main Memory, Automotive Infotainment and Cluster Memory, Industrial HMI and Wearable Controllers, Single-Board Computers and Set-Top Box Memory, Image Processing / Camera Video Buffer, Long-Life Repair and Aftermarket Support.
Smartphone and Tablet Main Memory
The MT42L256M64D4LM-18's 16 Gb density in a 256M × 64 organization provides 2 GB of LPDDR2 memory, matching the typical main-memory budget of mid-2010s smartphones and tablets. The 533 MHz clock rate (1066 MT/s data rate) delivers up to 17 GB/s of peak channel bandwidth across four LPDDR2 channels. Its 1.2 V VDD/VDDQ rail and PASR/deep-power-down modes reduce standby current versus DDR3, a critical advantage when the host SoC spends most of its time in sleep. Mobile platforms such as the Qualcomm Snapdragon 6xx series and NXP/Freescale i.MX 6/7 families were designed around LPDDR2 PHYs and benefit directly from this Micron part.
推荐
Automotive Infotainment and Cluster Memory
LPDDR2 with operating temperature -30 °C to +85 °C TC fits automotive infotainment and digital-cluster SoCs from the 2013-2018 generation (Renesas R-Car H2, NXP i.MX6Q automotive, TI J6/J7). The MT42L256M64D4LM-18's 16 Gb density supports frame buffers for WVGA / 720p cluster displays and infotainment HMI without compression artifacts. Channel-based CA architecture simplifies SoC-to-DRAM routing on multilayer automotive PCBs, and the 216-VFBGA (12x12 mm) footprint is footprint-compatible with several pin-compatible Micron SKUs, easing second sourcing for long-life automotive programs.
推荐
Industrial HMI and Wearable Controllers
Industrial human-machine interfaces (HMI) and wearables built around LPDDR2-capable SoCs benefit from the MT42L256M64D4LM-18's 16 Gb density at 1.2 V. The 216-VFBGA package, while BGA, is manageable on a 4-layer HMI main board and pairs well with low-power NXP/Freescale and ST application processors. Wearable devices especially value the deep-power-down mode, which drops the DRAM's standby current to microampere levels during sensor-only operation.
推荐
Single-Board Computers and Set-Top Box Memory
Single-board computers (SBC), set-top boxes, and home gateways that pair an LPDDR2-capable SoC with the MT42L256M64D4LM-18 get a 2 GB main-memory pool without the PCB complexity of DDR3 fly-by topology. The parallel LPDDR2 interface uses a channelized CA bus (per byte lane), simplifying PCB trace topology versus DDR3. The -18 speed bin (533 MHz / 1066 MT/s) supports 720p / 1080p media decode and UI rendering in low-cost STBs and SBCs without invoking LPDDR3 / LPDDR4 design rules.
推荐
Image Processing / Camera Video Buffer
Multi-camera image signal processors (ISPs) and video encoders used in security and machine-vision systems often pair a 16 Gb LPDDR2 with their SoC to act as a frame buffer for raw Bayer streams. The MT42L256M64D4LM-18's 1066 MT/s per-pin bandwidth and four-channel architecture provide enough throughput to ingest dual 1080p60 raw streams into DDR before encoding. Operating at 1.2 V keeps the buffer memory within the power envelope of compact vision modules where thermal dissipation is constrained.
推荐
Long-Life Repair and Aftermarket Support
Many field-deployed systems built circa 2014-2019 still need memory replacements for warranty repair. The MT42L256M64D4LM-18, while on Micron's obsolete list, remains available via authorized aftermarket distributors and is supported by Micron's archive documentation. The 216-VFBGA (12x12 mm) footprint and 1.2 V supply make it a like-for-like swap for failed units, and several Micron LPDDR2 SKUs share the same ball map, simplifying board-level rework on legacy medical, industrial, and aviation displays.
推荐
推荐产品汇总
工程参考数据： MT42L256M64D4LM-18 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT42L256M64D4LM-18 WT:A | MT42L256M64D4LM-18 WT:A TR | MT42L256M64D4LD-18 WT:A TR | MT42L256M64D4EV-25 WT:A TR | K4P8G304EB-FGC1 |
|---|---|---|---|---|---|---|
| Package | 216-VFBGA (12x12 mm) | 216-VFBGA (12x12 mm) - same | 216-VFBGA (12x12 mm) - same | 216-VFBGA (12x12 mm) - same | 216-VFBGA (12x12 mm) - same | 216-FBGA (12x12 mm) - same envelope, different ball-out |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 256M × 64 | 256M × 64 | 256M × 64 | 256M × 64 | 256M × 64 | 256M × 64 (Samsung PoP variant) |
| Speed Bin / Clock | -18 / 533 MHz (1066 MT/s) | -18 / 533 MHz | -18 / 533 MHz | -18 / 533 MHz | -25 / 400 MHz (800 MT/s) - slower | DDR-533 class per Samsung datasheet |
| VDD / VDDQ | 1.2 V / 1.2 V | 1.2 V / 1.2 V | 1.2 V / 1.2 V | 1.2 V / 1.2 V | 1.2 V / 1.2 V | 1.2 V / 1.2 V |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete | Obsolete | Last-time-buy / EOL per Samsung part history |
关键差异点
- Obsolete-but-supported by Micron legacy archive （对比 Newer LPDDR4 / LPDDR4X SKUs)
- Same-die Micron variants with identical electricals （对比 Cross-vendor Samsung K4P8G304EB-FGC1)
- 1.2 V LVCMOS JEDEC LPDDR2 compliance （对比 DDR3 SDRAM 1.5 V parts)
设计说明
LPDDR2 requires per-byte-lane length matching. Match the CA traces within 50 ps across each channel and route the DQ/DQS pairs as tightly-coupled differential microstrip (intra-pair skew ≤ 5 ps). Use 50 ohm single-ended impedance for CA and 50 ohm differential (100 ohm SE-to-SE) for DQS. Place the VREF 0.6 V decoupling capacitor within 100 mil of the VREF ball to suppress AC noise on the reference rail. The 216-VFBGA (12x12 mm) ball pitch requires PCB microvia escape; do not attempt dog-bone fan-out beyond 0.5 mm pitch — it fails manufacturability on standard 4-layer boards.
Provide a clean 1.2 V LPDDR2 rail. Recommended topology: a buck regulator (e.g. TPS62130 at 3 A) followed by a small LDO filter stage (e.g. TPS7A4533) for the most noise-sensitive read/write margins. Place 100 nF + 1 µF X7R ceramics at each VDD ball and a 22 µF bulk tantalum near the package. Decouple VDDQ independently from VDD to suppress simultaneous-switching noise (SSN) during multi-bank activation. Reference: Micron LPDDR2 hardware-design guide (legacy).
Common pitfalls: (1) Forgetting to read MR0/MR1/MR5/MR8 during LPDDR2 initialization — controllers without JEDEC LPDDR2 boot hang silently; (2) Driving CKE high before the 1.2 V rails are stable (causes latch-up); (3) Failing to terminate DQS lines properly — open DQS degrades eye margin by 30%+; (4) Using a DDR3-style fly-by command routing — LPDDR2 is channelized (per-byte CA bus) and requires different trace topology; (5) Ignoring RESET_n — LPDDR2 needs a clean reset sequence before CKE assertion.
合规信息
RoHS compliance verified per Micron product page. AEC-Q100 not applicable (memory IC, no automotive qualification). Conflict-minerals compliance declared by Micron in standard CMRT filings.
