MT47H64M16NF-25EAIT - 1Gb DDR2 SDRAM 84-FBGA | Micron
料号： MT47H64M16NF-25EAIT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $9.95 | $995.00 |
| 500 | $8.5 | $4,250.00 |
| 1,000 | $7.2 | $7,200.00 |
MT47H64M16NF-25EAIT 概述
DDR2 SDRAM is a synchronous dynamic random-access memory technology standardized by JEDEC (JESD79-2 series). It supersedes DDR by introducing on-die termination (ODT), lower supply voltage (1.8 V versus 2.5 V), and a stub-series terminated logic interface that enables higher data rates. As a memory IC, it sits within the broader hierarchy of volatile DRAM -> volatile memory -> memory IC -> integrated circuit -> semiconductor, serving as the working memory backbone in computing platforms that need high bandwidth at moderate power.
Key features of the MT47H64M16NF-25EAIT include an 8-bank architecture with burst lengths of 4 and 8, additive latency support, write leveling, and an on-die temperature sensor (TS). The 16-bit prefetch architecture doubles the data rate relative to the internal clock, while OCD calibration and ODT termination settings are programmable through the DDR2 mode register set. The 84-ball FBGA substrate provides a compact footprint suitable for space-constrained embedded designs.
Internally, the MT47H64M16NF-25EAIT uses a 1.8 V pseudo-open-drain SSTL_18 interface compatible with standard DDR2 controllers. Its 8-bank architecture enables concurrent operation of multiple pages, improving effective bandwidth under random-access workloads. Auto-refresh and self-refresh modes ensure data retention at typical self-refresh current of approximately 3 mA. The die is fabricated on a CMOS process tuned for low leakage, and the FBGA package offers matched-length trace routing for clean signal integrity at the rated speed.
Typical applications include networking routers and switches, printers and MFP imaging pipelines, industrial control boards, and embedded computing platforms (single-board computers, FPGA-based SoCs) that require 128 MB or 256 MB of main memory. The wide 16-bit data bus makes it particularly attractive for graphics frame buffers and video processing blocks. The industrial temperature grade and RoHS-compliant FBGA support deployment in harsh environments.
When designing with this device, allocate a 4-layer PCB with controlled-impedance 50-ohm differential routing for the clock and command/address group. Match DQ/DQS trace lengths within the tolerances specified in JEDEC DDR2 design guidelines, and place VTT termination resistors close to the controller side. Reference Micron's TN-47-08 layout note for the recommended via-in-pad escape scheme for the 84-ball FBGA.
This page synthesizes distributor pricing, drop-in alternatives, timing parameter comparison, and layout guidance not assembled in any single Micron datasheet or distributor page.
直接替换替代料： MT47H64M16NF-25EAIT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT47H64M16NF-25EIT:M
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16NF-25EAAT:M
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16NF-25E:M
✅ 直接替换📋 参考替代料（不在目录中）
NT5TU64M16HG-AC
✅ 直接替换📋 参考替代料（不在目录中）
K4T1G164QF-BCE7
✅ 直接替换📋 参考替代料（不在目录中）
H5PS1G83EFR-S6C
✅ 直接替换📋 参考替代料（不在目录中）
MT47H64M16NF-25EAIT 最大额定值与电气特性
| 存储器类型 | Volatile, DDR2 SDRAM |
| Memory Format | DRAM |
| Density | 1 Gbit (64M x 16) |
| 存储组织 | 8 Meg x 16 x 8 banks |
| Clock Frequency | 400 MHz |
| 数据速率 | 800 MT/s per pin |
| Access Time (tRCD/tRP) | 400 ps (nominal) |
| Cycle Time (tCK) | 2.5 ns (-25E speed grade) |
| Supply Voltage VDD/VDDQ | 1.8 V +/- 0.1 V |
| 接口类型 | SSTL_18 (parallel) |
| 工作温度 | -40C to +85C (Industrial, IT) |
| 封装 | 84-ball TFBGA, 8 mm x 12.5 mm |
| 安装类型 | Surface Mount |
| CAS 延迟 | Programmable, CL=5 at 400 MHz (-25E) |
| JEDEC Compliance | JESD79-2 (DDR2) |
| Burst Length | 4 / 8 (programmable) |
| On-Die Termination | Supported (ODT) |
| RoHS 状态 | Compliant |
MT47H64M16NF-25EAIT 84-ball tfbga, 8 mm x 12.5 mm 引脚配置指南
MT47H64M16NF-25EAIT（84-ball tfbga, 8 mm x 12.5 mm 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT47H64M16NF-25EAIT.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT47H64M16NF-25EAIT 适用于 6 应用s: Networking Router/Switch Memory, Embedded SBC Frame Buffer, Industrial Control HMI Board, Printer / MFP Image Pipeline Memory, Automotive Infotainment Memory (Non-ASIL), Medical Monitoring Display Buffer.
Networking Router/Switch Memory
The MT47H64M16NF-25EAIT delivers 128 MB of x16 DDR2 working memory at 800 MT/s, fitting the typical TCAM-lookup and packet-buffer footprint of mid-range routers and switches. Its 8-bank architecture lets the controller interleave row activations across 8 banks, sustaining packet throughput under randomized access. The 1.8 V +/- 0.1 V rail matches Marvell and Broadcom Ethernet SoC reference designs. Compared with DDR3, the lower clock rate (400 MHz) eases PCB layout in fanless chassis where 4-layer stack-up limits controlled-impedance reach, while ODT termination eliminates the need for an external VTT island on small boards.
推荐
Embedded SBC Frame Buffer
The 84-ball TFBGA package (8 x 12.5 mm) places 128-256 MB of working memory in an envelope sized for a Raspberry Pi-class single-board computer or an FPGA SoM stack. The 16-bit DQ/DQS group supports either x16 direct attachment to an Allwinner A20, NXP i.MX6ULL, or a Xilinx Zynq-7010 PL-side MIG interface. Industrial-grade -40C to +85C operation supports deployed outdoor boxes; the on-die temperature sensor enables bandwidth throttling when the SoC ballast heats up. Compared with LPDDR2, DDR2 requires only 1.8 V and tolerates wider PCB impedance tolerances, simplifying 4-layer stack-ups.
推荐
Industrial Control HMI Board
The MT47H64M16NF-25EAIT provides the working memory anchor for HMI displays running Linux or WinCE on Cortex-A5/A8 parts, holding 128 MB which is sufficient for Qt/Embedded graphics. Its industrial -40C to +85C range matches HVAC, kiosk, and machine-vision cabinet deployments, and the DDR2 protocol suits the slower SoC clocks common in MCUs. The JEDEC JESD79-2 compliance lets the same memory carry vendor-vetted board-support packages from multiple silicon vendors. Compared with a discrete SRAM + flash partition, a 16-bit DDR2 cuts BOM cost and PCB area while supporting double-buffer graphics operations at full-rate DMA bandwidth.
推荐
Printer / MFP Image Pipeline Memory
In multifunction printer controllers the MT47H64M16NF-25EAIT can buffer scanned pages at 600 dpi or run a render pipeline at 1200 dpi, with the 16-bit data bus sustaining 800 MT/s into an LCD panel controller or a hardware JPEG engine. The 8-bank page-hit policy keeps latency predictable under random-access print-job workloads, and the on-die temperature sensor can throttle the scan head driver when duty cycles rise. The 1.8 V supply matches the typical LDO rails already present in printer PSUs, and 84-ball FBGA fits behind the LCD rather than around a connector.
推荐
Automotive Infotainment Memory (Non-ASIL)
Although the -25EAIT is not AEC-Q100 qualified in the strict automotive sense, Micron's industrial temperature grade (-40C to +85C) plus RoHS-compliant FBGA allows it in non-safety audio head units, cluster displays, and rear-seat entertainment modules where -40C cold-crank is required and DDR2 controllers already exist. The wide 16-bit prefetch architecture accelerates H.264 decode buffers and ALSA audio mixing under Linux. Compared with DDR3 or DDR4, DDR2 here trades peak bandwidth for lower cost and easier PCB integration on glass-display cluster boards.
推荐
Medical Monitoring Display Buffer
Patient-monitor display controllers benefit from the MT47H64M16NF-25EAIT holding 128 MB for waveform rendering and trend storage while remaining within IEC-style medical EMC budgets. The 1.8 V rail reduces heat near display touch sensors and the 84-ball FBGA allows tight enclosure layouts behind 5-7 inch LCD panels. ODT termination simplifies trace matching for fan-out to SoCs that lack strong DDR2 drivers. Compared with LPDDR4, DDR2 here is fully synchronous, JEDEC-ratified, and long-term supported by the legacy hospital equipment supply chain, helping extend platform life cycles.
推荐
推荐产品汇总
工程参考数据： MT47H64M16NF-25EAIT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT47H64M16NF-25EIT:M | MT47H64M16NF-25E:M | NT5TU64M16HG-AC | K4T1G164QF-BCE7 | H5PS1G83EFR-S6C |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Nanya | Samsung Electronics | SK Hynix |
| Package | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball TFBGA (8x12.5 mm) | 84-ball FBGA | 84-ball FBGA | 84-ball FBGA |
| Density | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 16) | 1 Gbit (64M x 8) - x2 for x16 |
| Memory Type | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Clock Frequency | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
| Data Rate (per pin) | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s |
| Cycle Time (tCK) | 2.5 ns | 2.5 ns | 2.5 ns | 2.5 ns | 2.5 ns | 2.5 ns |
| Operating Temperature | -40C to +85C (Industrial) | -40C to +85C (Industrial) | 0C to +70C (Commercial) | 0C to +85C (Commercial) | 0C to +85C (Commercial) | -25C to +85C (Extended) |
| Supply Voltage | 1.8 V +/- 0.1 V | 1.8 V +/- 0.1 V | 1.8 V +/- 0.1 V | 1.8 V +/- 0.1 V | 1.8 V +/- 0.1 V | 1.8 V +/- 0.1 V |
关键差异点
- Active industrial temperature grade (-40C to +85C) （对比 MT47H64M16NF-25E:M (commercial 0-70C))
- Drop-in 84-ball TFBGA with Micron part-number pedigree （对比 Samsung K4T1G164QF-BCE7)
- On-die temperature sensor for in-system monitoring （对比 H5PS1G83EFR-S6C (Hynix))
- Qualified second-source from same Micron family （对比 MT47H64M16HR-25E (H) (Obsolete))
设计说明
Use a 4-layer stack-up with a continuous GND plane under the 84-ball TFBGA. Trace the DQ/DQS pairs as 50-ohm differential with matched length to within +/- 25 ps and isolate clock/address groups from data. Microvia-in-pad escape is recommended for inner balls; refer to Micron TN-47-08 for the recommended via placement.
Place a 10 uF bulk plus 0.1 uF ceramic decoupling capacitor within 0.5 inches of the VDD/VDDQ balls. Tie VTT to a tracking LDO capable of sourcing/sinking up to 500 mA per rank. The VREF pin must be a precision rail at 0.49 x VDDQ with sub-1% tolerance, fed from a low-noise reference.
Do not exceed JEDEC DDR2 tVAC timing on DQS, or hold skew on bidirectional strobes. Initialize the mode register (MR) sequence precisely per JESD79-2 step 4 (ZQ calibration) and step 7 (DLL reset) before normal operation. Misordered initialization is the most common cause of spurious errors with DDR2 SDRAM on x16 footprints.
Confirm impedance targets of 50 ohm to VSS for single-ended traces and 100 ohm differential for DQS/DQSU pairs. Use a fly-by VTT resistor layout rather than daisy-chain and locate ODT resistors close to the controller. IBIS simulation is recommended for backplane designs that fan out beyond 4 inches.
合规信息
RoHS compliance verified via Micron's product page for the MT47H64M16 family; not AEC-Q100 qualified but acceptable for industrial IEC/UL-60950-class applications.
