MT60B2G8RZ-64B-IT-H - 16Gb DDR5 SDRAM 3.2 GHz 78-FBGA | Micron
料号： MT60B2G8RZ-64B-IT-H ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.8 | $12.80 |
| 10 | $11.65 | $116.50 |
| 100 | $10.45 | $1,045.00 |
| 500 | $9.4 | $4,700.00 |
| 1,000 | $8.55 | $8,550.00 |
| 2,500 | $7.9 | $19,750.00 |
MT60B2G8RZ-64B-IT-H 概述
What is a DDR5 SDRAM? DDR5 (Double Data Rate 5) Synchronous DRAM is the fifth generation of DDR memory, succeeding DDR4. Compared with DDR4, DDR5 doubles the peak data rate (starting at 3200 MT/s with on-die termination and decision feedback equalization), halves the channel voltage (1.1 V VDD, 1.1 V VDDQ), introduces on-die ECC, and doubles bank group counts to improve parallelism. In the broader taxonomy: DRAM -> volatile memory -> semiconductor memory -> integrated circuit. The MT60B2G8RZ-64B-IT-H therefore sits in the volatile main-memory tier of any computing platform.
Key features include a maximum operating supply current of 363 mA, an industrial operating temperature range of 0 °C to +95 °C, a 1.1 V nominal supply (VDD/VDDQ), on-die termination (ODT), and a 78-ball FBGA package that supports high-speed signaling at 3200 MT/s. The 7.5 mm × 11 mm outline is shared across Micron's 16 Gb DDR5 ×8 family, enabling drop-in compatibility across density, speed, and temperature grades.
The device uses a fly-by topology for command, address, control, and clock signals, and integrates an on-DIMM voltage regulator (PMIC interface) for client DIMM-style deployments. Decision Feedback Equalization (DFE) and Write Leveling maintain signal integrity at 3200 MT/s, while the 16n prefetch and bank-group architecture double the effective page size compared to DDR4.
Typical applications include DDR5 UDIMM and SODIMM modules for desktop and notebook platforms, embedded computing platforms requiring industrial-grade memory, single-board computers (SBC) and edge AI accelerators, networking line cards with high packet buffer demand, and entry-level server memory modules. The IT grade makes it suitable for harsher thermal envelopes than commercial-grade DRAM.
When designing with this part, follow JEDEC JESD79-5 PCB layout and routing rules for DDR5: keep the byte-group DQ/DQS lengths matched within 5 mil, maintain a 100 Ω differential impedance on DQ/DQS pairs, and use a reference termination scheme compliant with the host memory controller's RTT selections. The DRAM does not require an external PMIC on the component itself but expects a 1.1 V rail in system designs.
This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet, all verified as of 2026-10-05.
直接替换替代料： MT60B2G8RZ-64B-IT-H ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT60B2G8RZ-64B:H
✅ 直接替换📋 参考替代料（不在目录中）
MT60B2G8RZ-64B:D
✅ 直接替换📋 参考替代料（不在目录中）
MT60B2G8RZ-64BA:H
✅ 直接替换📋 参考替代料（不在目录中）
MT60B2G8HB-64B:H
✅ 直接替换📋 参考替代料（不在目录中）
MT60B2G8RZ-64B-IT-H 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Density | 16 Gbit |
| 存储组织 | 2G x 8 |
| Maximum Data Rate | 3200 MT/s (3.2 GHz) |
| 工作温度 | 0 °C to +95 °C (Industrial) |
| Supply Voltage (VDD) | 1.1 V nominal |
| Supply Voltage (VDDQ) | 1.1 V nominal |
| Maximum Supply Current | 363 mA |
| 封装 | 78-FBGA (7.5 mm × 11 mm) |
| Package Code | RZ |
| On-Die Termination (ODT) | Yes |
| On-Die ECC | Yes (DDR5 standard) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| JEDEC Standard | JESD79-5 (DDR5 SDRAM) |
MT60B2G8RZ-64B-IT-H rz 引脚配置指南
MT60B2G8RZ-64B-IT-H（rz 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT60B2G8RZ-64B-IT-H.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT60B2G8RZ-64B-IT-H 适用于 7 应用s: DDR5 Desktop UDIMM Modules, DDR5 SODIMM Notebook Memory, Industrial Edge Computing SBCs, Networking Line Cards and Packet Buffers, Entry-Level Server Memory Modules, AI Inference Edge Accelerators, Telecommunications Baseband Boards.
DDR5 Desktop UDIMM Modules
The MT60B2G8RZ-64B-IT-H's 2G × 8 organization and 3200 MT/s JEDEC baseline speed make it the building block for DDR5-4800/5600 unbuffered DIMM modules used in mainstream desktop platforms. Eight ×8 devices stacked per 64-bit channel yield 16 GB per rank, and the industrial 0-95 °C envelope ensures operation inside the warmer chassis of high-TDP CPU platforms. Combined with on-die ECC and decision feedback equalization, the part delivers reliable 1.1 V signaling across the DIMM gold-fingers at the JEDEC-mandated 1.1 V VDD/VDDQ rails.
推荐
DDR5 SODIMM Notebook Memory
In SODIMM notebook modules, the 78-FBGA (7.5 × 11 mm) RZ package of the MT60B2G8RZ-64B-IT-H enables compact layouts that fit the tighter Z-height budget of mobile platforms. The 16 Gb density per device supports 8 GB / 16 GB single-rank SODIMMs at JEDEC-standard 1.1 V operation, while on-die ECC maintains data integrity under the variable thermal loads of laptop chassis. The industrial temp grade also makes this device attractive for ruggedized notebooks and military-grade portable computing.
推荐
Industrial Edge Computing SBCs
Single-board computers used in industrial edge gateways benefit from the MT60B2G8RZ-64B-IT-H's 0-95 °C industrial operating range and JEDEC JESD79-5 compliance. The device supports 8 GB / 16 GB on-board DRAM configurations when paired with an onboard PMIC, enabling fanless SBC designs for factory automation. Its 78-FBGA RZ package is compatible with the Micron 16 Gb DDR5 family footprint, allowing PCB reuse across product generations as densities scale.
推荐
Networking Line Cards and Packet Buffers
High-port-count networking line cards with deep packet buffers rely on dense DDR5 memory subsystems; the MT60B2G8RZ-64B-IT-H provides 16 Gb density in a JEDEC-standard ×8 footprint that scales to multi-gigabyte buffer pools. The on-die termination (ODT) and decision feedback equalization (DFE) features ensure clean 3200 MT/s signaling over the longer fly-by command/address traces typical of line-card layouts, while the industrial temp envelope handles the elevated ambient temperature inside switch chassis.
推荐
Entry-Level Server Memory Modules
RDIMMs for entry-level servers and edge servers use ×8 DRAM devices qualified to JEDEC DDR5 specs; the MT60B2G8RZ-64B-IT-H provides 16 Gb capacity with on-die ECC and the 1.1 V VDD/VDDQ rails expected by server platforms. When paired with a server-grade PMIC (e.g., TI TPS53659 or Renesas ISL682xx) on the DIMM, the module supports buffered operation and parity protection across the DDR5 channel. The IT temperature envelope also reduces cooling requirements at moderate TDP server SKUs.
推荐
AI Inference Edge Accelerators
Edge AI accelerators with on-board DRAM benefit from the 16 Gb density and 3200 MT/s bandwidth of the MT60B2G8RZ-64B-IT-H to hold quantized model weights and intermediate activations. The JEDEC JESD79-5 compliance ensures host-controller compatibility across NPU and FPGA accelerator SoCs that integrate DDR5 memory controllers. The industrial temp grade supports deployment in factory floors, smart-city cabinets, and outdoor edge enclosures where ambient temperatures exceed 70 °C.
推荐
Telecommunications Baseband Boards
Telecom baseband processing boards require reliable high-bandwidth memory for signal processing and protocol stacks. The MT60B2G8RZ-64B-IT-H delivers JEDEC-compliant DDR5 with on-die ECC to mitigate soft errors in long-running telecom workloads. The 78-FBGA (7.5 × 11 mm) RZ package fits the dense layout of ATCA and proprietary baseband boards, while the 0-95 °C industrial temp grade handles the elevated ambient inside telecom cabinets.
推荐
推荐产品汇总
工程参考数据： MT60B2G8RZ-64B-IT-H ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT60B2G8RZ-64B:H | MT60B2G8RZ-64B:D | MT60B2G8RZ-64BA:H | MT60B2G8HB-64B:H |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 78-FBGA (7.5x11 mm) RZ | 78-FBGA (7.5x11 mm) RZ - same | 78-FBGA (7.5x11 mm) RZ - same | 78-FBGA (7.5x11 mm) RZ - same | 78-FBGA (7.5x11 mm) - same family |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 1G x 16 |
| Max Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3600 MT/s | 3200 MT/s |
| Temperature Grade | Industrial (0-95 C) | Commercial (0-85 C) | Industrial (0-95 C) | Commercial (0-85 C) | Commercial (0-85 C) |
| Design Revision | H | H | D (earlier) | H | H |
| On-Die ECC | Yes (DDR5 standard) | Yes | Yes | Yes | Yes |
| JEDEC Compliance | JESD79-5 | JESD79-5 | JESD79-5 | JESD79-5 | JESD79-5 |
关键差异点
- Industrial 0-95 °C operating temperature grade （对比 MT60B2G8RZ-64B:H)
- Latest H design revision （对比 MT60B2G8RZ-64B:D)
- x8 organization optimized for DIMM modules （对比 MT60B2G8HB-64B:H)
设计说明
DDR5 fly-by topology requires matched trace lengths per byte group. Match DQ/DQS within ±5 mil and maintain 100 Ω differential impedance for DQ/DQS pairs. The 78-ball FBGA requires microvia-in-pad or dog-bone fan-out with 0.5 mm pitch; use a high-Tg FR-4 stackup (≥8 layers) with continuous GND reference planes beneath the DRAM area. Estimated: a 6-layer stackup will degrade signal integrity beyond 3200 MT/s.
The DRAM draws up to 363 mA at 1.1 V VDD/VDDQ under worst-case active read/write. Provide at least 10 µF of bulk decoupling per device plus 0.1 µF/1 nF high-frequency caps adjacent to each ball cluster. For module designs, integrate a JEDEC-compliant PMIC (PMIC5100/PMIC5200 family) to convert the host rail to the 1.1 V DDR5 supply. Estimated: 8 devices per channel consume 2.9 A peak - design the 1.1 V plane for 3 A continuous capacity.
The industrial 0-95 °C operating range is a junction/case specification, not ambient. In a sealed chassis with limited airflow, the case temperature can rise 10-15 °C above ambient. Use a minimum of 1 oz copper on outer layers of the DRAM footprint and, for stacked module designs, ensure airflow paths between adjacent devices. Estimated: at 363 mA and 1.1 V, the device dissipates ~0.4 W per IC, manageable without external heatsinking in most layouts.
Do not assume the Micron LPDDR part-detail page applies - the IT:H suffix on this MPN denotes DDR5 SDRAM in the DRAM catalog, not LPDDR. Verify you are referencing the DDR5 SDRAM datasheet, not the LPDDR5 datasheet. Also, the package code 'RZ' (7.5 × 11 mm 78-ball FBGA) is distinct from the 'HZ' or 'JS' codes used on other Micron 16 Gb DDR5 dies; footprint compatibility must be verified before PCB reuse.
合规信息
RoHS and REACH compliance per Micron product page. AEC-Q100 not applicable - DRAM is not an automotive-grade IC by qualification; refer to Micron's automotive DRAM portfolio for AEC-Q100 parts. Halogen-free status not explicitly stated in retrieved data; set to unknown.
