MTC10F1084S1RC56BD1 - 16GB DDR5-5600 ECC RDIMM 1Rx8 | Micron
料号： MTC10F1084S1RC56BD1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $181.88 | $181.88 |
| 10 | $175.5 | $1,755.00 |
| 50 | $168.2 | $8,410.00 |
| 100 | $162.4 | $16,240.00 |
| 500 | $155.1 | $77,550.00 |
| 1,000 | $148.75 | $148,750.00 |
MTC10F1084S1RC56BD1 概述
A DDR5 Registered DIMM is a server-class memory module that uses a register clock driver (RCD) to buffer command, address, and control signals between the host memory controller and the DRAM devices, enabling higher capacity and better signal integrity than unbuffered modules. RDIMMs also include ECC (Error-Correcting Code) capability to detect and correct single-bit errors, making them the dominant form factor for mission-critical servers, cloud datacenters, and HPC workloads. DDR5 represents the current generation of synchronous DRAM, doubling peak transfer rates over DDR4 while introducing on-module voltage regulation (PMIC), decision feedback equalization (DFE), and improved refresh schemes.
The MTC10F1084S1RC56BD1 features a CAS Latency of CL46, an on-module PMIC for power management, and Micron's 1Rx8 single-rank architecture using 16 Gb DDR5 SDRAM components. The module supports on-die ECC, side-band ECC transparency via the host chipset, and operates within the JEDEC-standard 0 to 95 °C ambient temperature range for server deployment. Thermal sensors on the SPD hub allow real-time monitoring via the system's BMC.
Typical applications include enterprise rack servers (1U/2U), hyperconverged infrastructure nodes, AI training/inference GPU servers (as CPU-attached memory), virtualization hosts, in-memory databases, and high-performance computing clusters. The 1Rx8 single-rank organization is preferred for workloads sensitive to memory latency and for systems that populate DIMM slots one-per-channel for maximum bandwidth.
When designing with this module, confirm host platform compatibility on the server OEM's memory compatibility list (QVL) before deployment. DDR5-5600 (native speed) typically requires a 12th-gen Intel Xeon Scalable or AMD EPYC 9004/9005 platform; lower-rated platforms may down-clock the module. Always populate modules in matched sets per channel to maintain full bandwidth.
This page synthesizes distributor pricing, cross-reference drop-in alternatives (including other Micron SKU variants and OEM-compatible equivalents), and practical server-deployment design notes not consolidated on the manufacturer product page.
直接替换替代料： MTC10F1084S1RC56BD1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MTC10F1084S1RC56BD1 （相同外形与封装尺寸） ——差异在于 JEDEC Compliance, Organization.
快速对比工具——选择替代料号进行并排对比：
MTC10F1084S1RC56BD2
✅ 直接替换📋 参考替代料（不在目录中）
MTC10F1084S1RC56BG1
✅ 直接替换📋 参考替代料（不在目录中）
MTC10F1084S1RC56B
✅ 直接替换📋 参考替代料（不在目录中）
M393A2K43EB3-CWE
✅ 直接替换📋 参考替代料（不在目录中）
HMCG94AGBRA
✅ 直接替换📋 参考替代料（不在目录中）
CT16G48RE40B
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MTC10F1084S1RC56BD1 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Module Form Factor | 288-pin RDIMM (Registered DIMM) |
| Capacity | 16 GB |
| 存储组织 | 1Rx8 (Single Rank, x8) |
| 数据速率 | 5600 MT/s (PC5-44800) |
| Speed Grade | DDR5-5600 |
| CAS 延迟 | CL46 |
| Operating Voltage (VDD) | 1.1 V |
| ECC Support | Yes (on-die ECC + side-band ECC) |
| Registered / Buffered | Yes (RCD on-module) |
| On-module PMIC | Yes (per JEDEC DDR5 RDIMM) |
| 工作温度 | 0 °C to 95 °C (server ambient) |
| JEDEC Compliance | JESD79-5 DDR5 SDRAM standard |
| DRAM Die Density | 16 Gb per device |
| RoHS Compliance | Compliant |
| Lead-Free | Yes |
MTC10F1084S1RC56BD1 standard 引脚配置指南
MTC10F1084S1RC56BD1（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MTC10F1084S1RC56BD1.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MTC10F1084S1RC56BD1 适用于 7 应用s: Enterprise Rack Servers (1U/2U), AI Training and Inference GPU Servers, Virtualization Hosts (VMware ESXi, KVM, Hyper-V), In-Memory Databases (SAP HANA, Redis, MemSQL), High-Performance Computing (HPC) Clusters, Hyperconverged Infrastructure (HCI) Nodes, Edge and Telco Servers (NFV).
Enterprise Rack Servers (1U/2U)
The MTC10F1084S1RC56BD1 is a primary fit for 1U and 2U rack-mount servers where 16 GB per slot balances capacity and cost across high-density DIMM populations. The DDR5-5600 native speed (PC5-44800) sustains 44.8 GB/s per module, enabling modern Intel Xeon Scalable and AMD EPYC 9004/9005 platforms to feed multi-core CPUs without memory-bound stalls. The on-module PMIC and register clock driver (RCD) keep signal integrity clean across 8-channel memory subsystems, while ECC corrects single-bit errors that would otherwise corrupt long-running workloads. Per Micron's RDIMM population guide, 1Rx8 modules are recommended for 1DPC configurations where maximum bandwidth per channel is required.
推荐
AI Training and Inference GPU Servers
AI training clusters use the MTC10F1084S1RC56BD1 as CPU-attached host memory that pre-stages datasets, model weights, and activation tensors before GPU DMA. The 5600 MT/s bandwidth prevents CPU-side bottlenecks that would starve H100/H200 GPUs of input data; the CL46 latency keeps pre-processing pipelines (tokenization, augmentation) tightly synced to GPU compute. ECC is mission-critical here - a single silent bit-flip during a multi-day training run would invalidate checkpoints and waste GPU-hours. The 1Rx8 organization is preferred in 8-channel platforms for maximum rank-level parallelism, allowing concurrent access from CPU cores, NVMe controllers, and NICs.
推荐
Virtualization Hosts (VMware ESXi, KVM, Hyper-V)
Virtualization hosts benefit from the MTC10F1084S1RC56BD1's ECC and registered signaling because they consolidate dozens of VMs onto a single physical server, multiplying the probability of soft memory errors. The 16 GB per-DIMM granularity allows operators to right-size memory (e.g., 12x16 GB = 192 GB for a mid-density host) without over-provisioning. DDR5-5600 supports the high VM density per socket by providing enough bandwidth to service the combined working-set pressure of running VMs. RDIMM ECC is generally mandatory in enterprise virtualization SLAs.
推荐
In-Memory Databases (SAP HANA, Redis, MemSQL)
In-memory databases like SAP HANA, Redis Enterprise, and SingleStore require ECC-protected memory to maintain transactional integrity because all data resides in DRAM. The MTC10F1084S1RC56BD1's 5600 MT/s throughput and CL46 latency directly determine query response time for hash-lookup and scan-heavy workloads. The 288-pin RDIMM form factor allows dense population (8-12 DIMMs per CPU socket) to reach the 1 TB-class memory footprints that in-memory databases demand. 1Rx8 modules are favored for their balance of capacity and rank-level concurrency.
推荐
High-Performance Computing (HPC) Clusters
HPC clusters running CFD, FEA, genomics assembly, and scientific simulations deploy the MTC10F1084S1RC56BD1 to feed tightly-coupled MPI workloads across NUMA domains. The DDR5-5600 bandwidth sustains cross-node message-passing and large-block matrix operations without saturating the memory subsystem. ECC prevents silent corruption in long-running simulations (weather models, molecular dynamics) where errors propagate and corrupt results irreversibly. The 1.1 V operating voltage reduces per-DIMM power consumption versus DDR4 - meaningful in dense HPC racks drawing tens of kilowatts.
推荐
Hyperconverged Infrastructure (HCI) Nodes
Hyperconverged platforms (Nutanix, VMware vSAN, ScaleIO) running compute and storage on the same node rely on the MTC10F1084S1RC56BD1 to provide both VM memory and a caching tier for distributed storage. The 5600 MT/s bandwidth prevents the storage I/O path from starving VM workloads that compete for the same DIMMs. ECC protects both VM data and storage cache from bit-flips that would propagate as silent data corruption across the cluster. The 1Rx8 single-rank configuration is optimal for the typical 8-12 DIMM per socket populations used in HCI appliances.
推荐
Edge and Telco Servers (NFV)
Telco-grade servers running virtualized network functions (vRAN, 5G core, CDN edge) deploy the MTC10F1084S1RC56BD1 because ECC and reliability are non-negotiable for carrier-grade SLAs. The DDR5-5600 bandwidth sustains the deterministic packet-processing latency that 5G workloads require. The 1Rx8 single-rank configuration maintains consistent latency across the operating temperature range (0-95 °C ambient), critical for edge deployments in unconditioned outdoor enclosures. Micron's RDIMM validation per JEDEC JESD79-5 supports telco NEBS-style deployments.
推荐
推荐产品汇总
工程参考数据： MTC10F1084S1RC56BD1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MTC10F1084S1RC56BD2 | MTC10F1084S1RC56BG1 | MTC10F1084S1RC56B | M393A2K43EB3-CWE | HMCG94AGBRA | CT16G48RE40B |
|---|---|---|---|---|---|---|---|
| Package | 288-pin RDIMM | 288-pin RDIMM (same) | 288-pin RDIMM (same) | 288-pin RDIMM (same) | 288-pin RDIMM (same) | 288-pin RDIMM (same) | 288-pin RDIMM (same) |
| Brand | Micron Technology | Micron Technology (same) | Micron Technology (same) | Micron Technology (same) | Samsung Electronics | SK Hynix | Micron Technology (Crucial channel) |
| Capacity | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB |
| Data Rate | 5600 MT/s (PC5-44800) | 5600 MT/s | 5600 MT/s | 5600 MT/s | 5600 MT/s | 5600 MT/s | 4800 MT/s (PC5-38400) |
| Rank Organization | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 |
| CAS Latency | CL46 | CL46 | CL46 | CL46 | CL46 | CL46 | CL40 |
| ECC Support | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
关键差异点
- Micron DID-agnostic SKU flexibility vs Samsung/SK Hynix single-vendor lock （对比 M393A2K43EB3-CWE (Samsung))
- Native DDR5-5600 (PC5-44800) vs down-clocked DDR5-4800 alternative （对比 CT16G48RE40B (Crucial DDR5-4800))
- OEM Micron-branded module for warranty/QVL compliance （对比 Crucial-branded CT16G48RE40B)
- 1Rx8 single-rank organization for maximum bandwidth per channel （对比 2Rx8 16GB alternative (hypothetical))
设计说明
Per Micron's server memory population guidelines, do NOT mix 1Rx8 modules (like the MTC10F1084S1RC56BD1) with 2Rx8 modules in the same memory channel. The memory controller will down-train to the lowest-common configuration, or POST will fail outright on validated platforms. When scaling capacity, populate all DIMM slots with identical rank organization (1Rx8 throughout), identical capacity (16 GB throughout), and identical speed grade (DDR5-5600 throughout) to maintain full bandwidth and avoid SPD checksum mismatches.
DDR5 RDIMMs at PC5-44800 (5600 MT/s) dissipate more power than DDR4 equivalents due to higher data rates and the on-module PMIC. Per Micron's thermal guidance, ensure chassis intake air stays within 0-35 °C and that DIMM slot airflow is not blocked by expansion cards or cable bundles. Server platforms typically report DIMM thermal sensors via the BMC; set alerts at 85 °C to allow headroom before throttling. Estimated: a fully-populated 2U server with 24x 16 GB DDR5-5600 1Rx8 modules draws approximately 200-300 W of memory subsystem power at idle-to-moderate load.
DDR5-5600 signal integrity is sensitive to DIMM slot population order. Always populate DIMM slots in the order specified by the server OEM - typically farthest-from-CPU first for 1DPC configurations, or in matched pairs for 2DPC. Per Micron's RDIMM design guide, leave one slot empty between DIMMs when forced to mix capacities to minimize crosstalk. Validate signal integrity by running the server's built-in memory training (MRC) at every BIOS update.
The MTC10F1084S1RC56BD1 integrates an on-module PMIC that converts the 12 V rail from the motherboard to the 1.1 V VDD required by the DRAM devices. Per JEDEC DDR5 specification, the PMIC supports programmable output voltage and includes over-current protection. Estimated: at full PC5-44800 bandwidth with 100% read/write duty cycle, each 16 GB 1Rx8 module draws approximately 6-8 W; derate to 4-5 W for typical enterprise workloads with 30-50% memory utilization.
合规信息
RoHS compliant per Micron product page. AEC-Q100 not applicable (server DRAM, not automotive-grade). Lead-free per JEDEC JESD79-5 DDR5 compliance. Halogen-free status not explicitly stated in provided data.
