MTC10F1084S1RC56BD1-TR - 16GB DDR5-5600 ECC RDIMM 1Rx8 | Micron
料号： MTC10F1084S1RC56BD1-TR ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $181.88 | $181.88 |
| 10 | $175.5 | $1,755.00 |
| 100 | $165.2 | $16,520.00 |
| 500 | $155 | $77,500.00 |
| 1,000 | $148.5 | $148,500.00 |
MTC10F1084S1RC56BD1-TR 概述
A server-class DDR5 RDIMM is a buffered, error-correcting memory module that places a registered clock driver on the address and command signals between the host CPU and the DRAM devices. Within the broader hierarchy, RDIMMs belong to the DRAM family -> volatile system memory -> server/workstation memory tier. They are used in multi-socket servers and enterprise platforms where signal integrity, capacity scaling, and data integrity (via ECC) are required.
Key features of this module include 16 GB capacity per module, 5600 MT/s peak transfer rate (PC5-44800), on-die ECC plus sideband ECC for end-to-end data integrity, a registered buffer for high-rank scalability, 1Rx8 organization for balanced cost-per-GB, 1.1 V operation for lower power versus DDR4, and a 288-pin edge connector keyed for RDIMM slots. Micron's server DRAM SKUs are also DID-agnostic, allowing Micron to substitute equivalent compatible parts at shipment when inventory shifts occur.
The MTC10F1084S1RC56BD1-TR is designed for OEM server platforms that list a Supermicro cross-reference or equivalent DDR5-5600 1Rx8 16 GB RDIMM. The "-TR" suffix denotes Tape & Reel packaging rather than tray, which is typically used for system integrators and OEM assembly lines.
Typical applications include single- and dual-socket Xeon / EPYC servers, virtualization hosts, in-memory database nodes, AI inference edge servers, and enterprise storage controllers. The 1Rx8 configuration provides a balance of capacity and channel rank population that suits mainstream server workloads.
When designing with this module, confirm that the server's memory controller and BIOS support DDR5-5600 (PC5-44800) RDIMMs at 1.1 V. For multi-module-per-channel configurations, verify the populated rank count is within the platform's validated compatibility list. Mixing RDIMMs of different ranks or speeds will force the memory bus to fall back to the slowest module's timing.
直接替换替代料： MTC10F1084S1RC56BD1-TR ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MTC10F1084S1RC56BD1-TR （相同外形与封装尺寸） ——差异在于 Capacity, Memory Type, Data Rate, JEDEC Compliance, Organization.
快速对比工具——选择替代料号进行并排对比：
MTC10F1084S1RC56BD1
✅ 直接替换✓ 有现货
$148.75 / 个
查看数据手册 →MTC10F1084S1RC56B
✅ 直接替换📋 参考替代料（不在目录中）
M321R2GA3BB6-CQ
✅ 直接替换📋 参考替代料（不在目录中）
HMCG84AGBRA191N
✅ 直接替换✓ 有现货
$103.2 / 个
查看数据手册 →KSM56R46BD4-32HMI
✅ 直接替换📋 参考替代料（不在目录中）
MTC10F1084S1RC56BD1-TR 最大额定值与电气特性
| 存储器类型 | DDR5 SDRAM |
| Module Form Factor | 288-pin RDIMM (Registered DIMM) |
| Capacity | 16 GB |
| 存储组织 | 1Rx8 (single-rank, x8) |
| Transfer Rate | 5600 MT/s (PC5-44800) |
| Speed Grade | DDR5-5600 |
| CAS 延迟 | CL46 |
| Operating Voltage | 1.1 V |
| Error Correction | ECC (on-die + sideband) |
| Buffered | Yes (Registered) |
| Module Configuration | 2G x 80 |
| JEDEC Compliance | DDR5 RDIMM standard |
| Packaging | Tape & Reel (TR suffix) |
| RoHS 状态 | Compliant |
MTC10F1084S1RC56BD1-TR standard 引脚配置指南
MTC10F1084S1RC56BD1-TR（standard 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MTC10F1084S1RC56BD1-TR.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MTC10F1084S1RC56BD1-TR 适用于 6 应用s: Single-Socket Xeon Server Main Memory, Dual-Socket EPYC Server Memory Population, Virtualization Host Memory, In-Memory Database Node, AI Inference Edge Server, Enterprise Storage Controller Memory.
Single-Socket Xeon Server Main Memory
The MTC10F1084S1RC56BD1-TR fits single-socket Xeon E-series or mainstream Scalable server platforms as primary DDR5 system memory. Its 16 GB capacity per module and 5600 MT/s (PC5-44800) transfer rate satisfy mainstream server workloads, while the ECC RDIMM organization protects against soft errors critical to 24/7 operation. The 1Rx8 single-rank layout provides clean signaling margins when populating one DIMM per channel at DDR5-5600 speeds, reducing training time and improving platform stability. Registered buffering isolates the address/command bus from the host controller, enabling reliable multi-DIMM scalability. Micron's DID-agnostic SKU policy helps integrators maintain supply continuity during allocation periods.
推荐
Dual-Socket EPYC Server Memory Population
In dual-socket AMD EPYC server platforms, the MTC10F1084S1RC56BD1-TR enables balanced memory populations across both processor memory controllers. With 16 GB per module and 1Rx8 organization, systems can scale from 64 GB (4 DIMMs per socket) to 256 GB+ (8 DIMMs per socket) while preserving DDR5-5600 speed grades. The registered ECC architecture ensures data integrity across both sockets and inter-socket coherence links. The 1.1 V operating voltage reduces per-DIMM power draw versus DDR4, lowering total platform energy cost in dense compute deployments.
推荐
Virtualization Host Memory
The MTC10F1084S1RC56BD1-TR is well suited for virtualization hosts running VMware ESXi, Proxmox VE, or Microsoft Hyper-V. Each 16 GB module provides predictable capacity for VM provisioning, while ECC corrects single-bit errors that would otherwise crash guest operating systems. The 5600 MT/s bandwidth supports memory-intensive virtual desktop infrastructure (VDI) workloads. Populating multiple 1Rx8 modules per channel allows capacity scaling without sacrificing per-channel bandwidth, critical when running 50-100+ VMs per host.
推荐
In-Memory Database Node
In-memory databases such as Redis, SAP HANA, and Aerospike benefit from the MTC10F1084S1RC56BD1-TR's combination of 16 GB capacity and DDR5-5600 bandwidth. The registered ECC architecture guarantees transactional integrity required for financial workloads. Multiple modules per channel enable 128 GB-512 GB memory pools per compute node, supporting large working-set databases. The 1.1 V DDR5 operation reduces node-level power consumption versus DDR4-equivalent builds, improving data center PUE metrics.
推荐
AI Inference Edge Server
The MTC10F1084S1RC56BD1-TR supports AI inference edge servers running models such as Llama-3-8B or Mistral-7B in INT8/FP16 precision. The 5600 MT/s DDR5 bandwidth provides the memory throughput required for transformer self-attention layers at batch sizes 1-4. ECC prevents silent corruption that would degrade model accuracy over time. The registered buffer architecture enables high-density DIMM counts in 1U/2U edge chassis, fitting within thermal envelopes. Micron's server DRAM supply continuity supports AI infrastructure scaling.
推荐
Enterprise Storage Controller Memory
Enterprise RAID controllers, NAS heads, and SAN arrays benefit from the MTC10F1084S1RC56BD1-TR's ECC RDIMM reliability for metadata caching and write-back journaling. The 16 GB capacity suits read-cache tiers, while 5600 MT/s accelerates metadata lookups. The registered buffer architecture enables multi-DIMM configurations in storage-dense 1U controllers. JEDEC-standard DDR5 RDIMM compatibility simplifies BOM consolidation across storage product lines.
推荐
推荐产品汇总
工程参考数据： MTC10F1084S1RC56BD1-TR ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MTC10F1084S1RC56BD1 | MTC10F1084S1RC56B | M321R2GA3BB6-CQ | HMCG84AGBRA | KSM56R46BD4-32HMI |
|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix | Kingston Technology |
| Package | 288-pin RDIMM | 288-pin RDIMM - same | 288-pin RDIMM - same | 288-pin RDIMM - same | 288-pin RDIMM - same | 288-pin RDIMM - same |
| Capacity | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB | 32 GB (2x capacity) |
| Transfer Rate | 5600 MT/s (PC5-44800) | 5600 MT/s | 5600 MT/s | 5600 MT/s | 5600 MT/s | 5600 MT/s |
| Organization | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 2Rx8 (different rank) |
| ECC Support | Yes (on-die + sideband) | Yes | Yes | Yes | Yes | Yes |
| Operating Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Packaging | Tape & Reel | Tray | Tray | Tray | Tray | Tray |
关键差异点
- DID-agnostic SKU with supply continuity guarantee （对比 Samsung M321R2GA3BB6-CQ)
- Tape & Reel packaging for OEM assembly （对比 MTC10F1084S1RC56BD1 (tray variant))
- 16 GB 1Rx8 capacity with DDR5-5600 headroom （对比 KSM56R46BD4-32HMI (32 GB 2Rx8))
设计说明
Estimated: Do NOT mix DDR5 RDIMMs of different ranks (1Rx8 with 2Rx8) in the same channel without verifying platform support - many DDR5-5600 server platforms fall back to DDR5-4800 speeds or refuse to boot with mixed-rank populations. Confirm your server's qualified memory list (QVL) before mixing Micron, Samsung, and SK Hynix modules - while JEDEC-compatible, OEM validation typically recommends single-vendor population per platform.
DDR5 RDIMM slots are NOT backward compatible with DDR4 RDIMM slots - the keying notch is positioned differently to prevent cross-insertion. Ensure your server platform's DIMM slots are explicitly DDR5 (288-pin RDIMM keyed per JEDEC DDR5 specification). The MTC10F1084S1RC56BD1-TR module's on-board PMIC requires the host platform to provide the DDR5 1.1 V rail with sufficient current for all populated DIMMs.
Estimated: A fully populated 1U server with 8x MTC10F1084S1RC56BD1-TR modules (128 GB total) draws approximately 50-70W of memory subsystem power at idle, rising to 90-120W under sustained DDR5-5600 read/write load. Ensure chassis airflow provides at least 25 CFM across the DIMM bank. DIMM heatsinks are required for sustained workloads in 1U/2U form factors.
合规信息
RoHS/REACH compliant per Micron product page. AEC-Q100 not applicable for server DRAM modules. Lead-free and halogen-free per JEDEC DDR5 RDIMM standards.
