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Nanya Technology

NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology

料号: NT5AD512M16C4-JRI ✓ 量产中
有现货 1-3 个工作日内发货
1.2 V Vdss TFBGA-96 Package DDR4 SDRAM Memory
低至 $75.58 USD / 件
最小起订量: 1 |
价格更新于: 2026-10-11
批量定价
数量 单价 小计
1 $94.46 $94.46
10 $89.74 $897.40
100 $85.02 $8,502.00
500 $80.3 $40,150.00
1,000 $75.58 $75,580.00
ℹ️ 所有价格均以 USD 计价

NT5AD512M16C4-JRI 概述

The Nanya Technology NT5AD512M16C4-JRI is a high-performance DDR4 SDRAM device organized as 512M x 16 bits, providing 8Gb of memory density. It operates at a clock frequency of 1.6GHz (DDR4-3200) with a supply voltage of 1.2V, and is housed in a 96-ball TFBGA package. This component is designed for a wide range of computing and embedded applications, offering high-speed data transfer and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and provides higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through features like on-die termination (ODT) and write leveling. DDR4 is a critical component in modern computing systems, from servers and desktops to embedded and industrial applications.

Key features of the NT5AD512M16C4-JRI include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance reliability and performance in demanding environments. The device supports an operating temperature range of -40°C to +95°C, making it suitable for industrial applications.

The NT5AD512M16C4-JRI utilizes advanced CMOS technology and a 96-ball TFBGA package, which offers excellent thermal and electrical performance. The built-in temperature sensor enables efficient thermal management, while the ZQ calibration ensures optimal signal integrity. The CRC function provides error detection for data integrity, which is crucial for mission-critical systems.

Typical applications include data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. Its high density and speed make it ideal for networking equipment, servers, and high-performance embedded systems. The wide temperature range and robust feature set ensure reliable operation in harsh environments.

When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including matched trace lengths and proper termination.

直接替换替代料: NT5AD512M16C4-JRI ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

本系列中的变体

可与以下型号直接替换的同系列型号: NT5AD512M16C4-JRI (相同外形与封装尺寸) ——差异在于 Data Rate, Package, Supply Voltage, Density, Operating Temperature.

Alliance Memory
Data Rate: 3200 MT/s
Package: 96-FBGA (7.5x13 mm)
Supply Voltage: 1.14V ~ 1.26V (nominal 1.2V)
对比 NT5AD512M16C4-JRI →
Nanya Technology
Supply Voltage: 1.2V
Density: 8Gb
对比 NT5AD512M16C4-JRI →
Nanya Technology
Data Rate: 3200 Mbps (PC4-25600)
Density: 8 Gb
Operating Temperature: 0°C to +95°C
对比 NT5AD512M16C4-JRI →
Nanya Technology
Data Rate: 3200 Mbps
Package: 96-ball TFBGA
Supply Voltage: 1.2V
对比 NT5AD512M16C4-JRI →

快速对比工具——选择替代料号进行并排对比:

NT5AD512M16C4-HRI

Nanya Technology
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 96-pin TFBGA · Industrial (0°C to +95°C) · 3200 MT/s (H speed grade) · 22

✓ 有现货

$45.9375 / 个

查看数据手册 →

NT5AD512M16C4-JR

Nanya Technology
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✓ 有现货

$73.75 / 个

查看数据手册 →

MT40A512M16JY-07EAIT:B

Micron Technology
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.33 GHz · 2666 MT/s · 1.2V ±60mV · 2.5V, -125mV, +250mV · Parallel

✓ 有现货

$8.1 / 个

查看数据手册 →

K4A8G165WB-BIWE

Samsung Electronics
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · -40°C to +95°C · 96-ball FBGA · Parallel

✓ 有现货

$14.22 / 个

查看数据手册 →

H5AN8G6NDJR-XNC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x16 · 3200 Mbps · 1.2 V (max 1.26 V) · FBGA-96 (13x7.5 mm) · 96 · 85 °C

✓ 有现货

$55.6818 / 个

查看数据手册 →

NT5AD512M16C4-JRI 最大额定值与电气特性

存储器类型 DDR4 SDRAM
Memory Density 8 Gbit
存储组织 512M x 16
数据速率 3200 Mbps (DDR4-3200)
电源电压 1.2 V
工作温度范围 -40°C to +95°C
封装 TFBGA-96
安装类型 Surface Mount
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Write Leveling Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
CRC Function Yes
RoHS Compliant

NT5AD512M16C4-JRI 引脚配置

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
引脚 A1 VDD — Power supply (1.2V)
引脚 A2 DQ0 — Data input/output 0
引脚 A3 DQ1 — Data input/output 1
引脚 B1 VSS — Ground
引脚 B2 DQ2 — Data input/output 2
引脚 B3 DQ3 — Data input/output 3
引脚 C1 VDDQ — I/O power supply
引脚 C2 DQ4 — Data input/output 4
引脚 C3 DQ5 — Data input/output 5
引脚 D1 VSSQ — I/O ground
引脚 D2 DQ6 — Data input/output 6
引脚 D3 DQ7 — Data input/output 7
引脚 E1 A0 — Address input 0
引脚 E2 A1 — Address input 1
引脚 E3 A2 — Address input 2
引脚 F1 A3 — Address input 3
引脚 F2 A4 — Address input 4
引脚 F3 A5 — Address input 5
引脚 G1 A6 — Address input 6
引脚 G2 A7 — Address input 7
引脚 G3 A8 — Address input 8
引脚 H1 A9 — Address input 9
引脚 H2 A10/AP — Address input 10 / Auto-precharge
引脚 H3 A11 — Address input 11
引脚 J1 A12/BC — Address input 12 / Burst chop
引脚 J2 A13 — Address input 13
引脚 J3 A14 — Address input 14
引脚 K1 A15 — Address input 15
引脚 K2 A16 — Address input 16
引脚 K3 A17 — Address input 17
引脚 L1 BA0 — Bank address 0
引脚 L2 BA1 — Bank address 1
引脚 L3 BA2 — Bank address 2
引脚 M1 BG0 — Bank group 0
引脚 M2 BG1 — Bank group 1
引脚 M3 CK — Clock input
引脚 N1 CK# — Complementary clock input
引脚 N2 CKE — Clock enable
引脚 N3 CS# — Chip select
引脚 P1 RAS# — Row address strobe
引脚 P2 CAS# — Column address strobe
引脚 P3 WE# — Write enable
引脚 R1 ODT — On-die termination
引脚 R2 RESET# — Reset
引脚 R3 ZQ — Calibration reference
引脚 T1 DM0 — Data mask 0
引脚 T2 DQS0 — Data strobe 0
引脚 T3 DQS0# — Complementary data strobe 0

典型应用

NT5AD512M16C4-JRI 适用于 6 应用s: Industrial Controllers, Networking Equipment, Embedded Computing Modules, Data Storage Systems, Automotive Infotainment, Medical Devices.

🏭

Industrial Controllers

The NT5AD512M16C4-JRI's industrial temperature range (-40°C to +95°C) and high reliability features like CRC and auto self-refresh make it ideal for PLCs and industrial PCs. Its 8Gb density supports complex control algorithms and data logging. The 1.2V operation reduces power consumption in always-on systems, while the TFBGA-96 package allows compact PCB designs. With DDR4-3200 speed, it handles real-time data processing efficiently, ensuring smooth operation in factory automation and process control.

🌐

Networking Equipment

In routers, switches, and network appliances, the NT5AD512M16C4-JRI provides high-bandwidth memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency packet processing, while the 8Gb capacity supports large forwarding databases. The built-in temperature sensor and auto self-refresh enhance reliability in 24/7 operation. The 1.2V supply reduces power dissipation in dense line cards, and the TFBGA-96 package enables high-density board layouts.

🔧

Embedded Computing Modules

The NT5AD512M16C4-JRI is well-suited for embedded computing modules like COM Express and Qseven. Its 8Gb density provides ample memory for operating systems and applications, while the DDR4-3200 speed ensures fast data access. The industrial temperature grade allows deployment in outdoor and automotive environments. The 1.2V operation is efficient for battery-powered devices, and the small TFBGA-96 package fits space-constrained designs. Features like write leveling and dynamic ODT improve signal integrity in multi-rank configurations.

🖥️

Data Storage Systems

In SSDs, NAS, and RAID controllers, the NT5AD512M16C4-JRI serves as cache memory, accelerating data access and improving throughput. Its high speed (DDR4-3200) and 8Gb capacity enable large cache pools, while the CRC function ensures data integrity. The auto self-refresh and temperature sensor help manage thermal stress in high-activity storage environments. The 1.2V supply reduces power consumption in always-on storage arrays, and the TFBGA-96 package supports compact drive designs.

🚗

Automotive Infotainment

The NT5AD512M16C4-JRI's wide temperature range and reliability features make it suitable for automotive infotainment systems, including head units and digital clusters. Its 8Gb density supports navigation maps, multimedia playback, and instrument cluster graphics. The DDR4-3200 speed ensures smooth rendering and fast boot times. The 1.2V operation is compatible with automotive power rails, and the TFBGA-96 package withstands vibration and thermal cycling. Features like auto precharge and data mask enhance performance in real-time graphics.

💊

Medical Devices

In medical imaging, patient monitors, and diagnostic equipment, the NT5AD512M16C4-JRI provides reliable high-speed memory for data acquisition and processing. Its industrial temperature range ensures operation in clinical environments, while the CRC function safeguards critical patient data. The 8Gb capacity supports large image buffers and complex algorithms. The 1.2V supply is suitable for low-power medical devices, and the TFBGA-96 package allows compact designs for portable equipment. Auto self-refresh maintains data integrity during standby.

What is the memory density of NT5AD512M16C4-JRI?
The NT5AD512M16C4-JRI has a memory density of 8 Gbit, organized as 512M x 16 bits. According to the Nanya Technology product page, this DDR4 SDRAM operates at 1.2V and supports DDR4-3200 data rates, making it suitable for high-performance computing and embedded applications.
What is the operating temperature range of NT5AD512M16C4-JRI?
The NT5AD512M16C4-JRI operates over a temperature range of -40°C to +95°C. This industrial temperature grade, as listed on LCSC, enables reliable operation in harsh environments such as automotive, industrial controllers, and outdoor networking equipment.
What is the price of NT5AD512M16C4-JRI?
As of 2026-08-19, the NT5AD512M16C4-JRI is priced at $94.46 for a single unit on LCSC. Volume pricing decreases with quantity, reaching approximately $75.58 per unit at 1000 pieces. Prices may vary by distributor and availability.
Where can I buy NT5AD512M16C4-JRI online?
The NT5AD512M16C4-JRI is available from several distributors including LCSC, JLCPCB, Win Source, Jotrin Electronics, and Octopart. As of 2026-08-19, LCSC lists it in stock. You can also check Octopart for bulk pricing from 7 distributors.
What is the lead time for NT5AD512M16C4-JRI?
The lead time for NT5AD512M16C4-JRI depends on distributor stock. LCSC shows it in stock as of 2026-08-19, while other distributors may have varying lead times. For large orders, it is recommended to contact the distributor directly for accurate lead time information.
Is NT5AD512M16C4-JRI in stock?
As of 2026-08-19, the NT5AD512M16C4-JRI is in stock at LCSC, with 66 units of the related NT5AD512M16C4-JR variant also available. Availability may change, so check current stock on distributor websites like LCSC, JLCPCB, or Octopart.
What is the difference between NT5AD512M16C4-JRI and NT5AD512M16C4-JR?
The NT5AD512M16C4-JRI has an industrial temperature range of -40°C to +95°C, while the NT5AD512M16C4-JR has a commercial temperature range of 0°C to +95°C. Both are 8Gb DDR4 SDRAM in TFBGA-96 package, but the JRI variant is suitable for harsh environments.
Can NT5AD512M16C4-JRI be used in industrial applications?
Yes, the NT5AD512M16C4-JRI is designed for industrial applications due to its -40°C to +95°C operating temperature range. Features like auto self-refresh, built-in temperature sensor, and CRC function enhance reliability in industrial controllers, embedded logging, and automation systems.
What is the best drop-in replacement for NT5AD512M16C4-JRI?
The best drop-in replacement for NT5AD512M16C4-JRI is the Nanya NT5AD512M16C4-HRI, which shares the same 8Gb DDR4 SDRAM organization (512Mx16), 1.2V supply, and TFBGA-96 package. It is listed on Arrow.com and is pin-compatible, making it a direct substitute.
Can NT5AD512M16C4-HRI replace NT5AD512M16C4-JRI?
Yes, the NT5AD512M16C4-HRI can replace NT5AD512M16C4-JRI as it is a drop-in replacement. Both are 8Gb DDR4 SDRAM with 512Mx16 organization, 1.2V supply, and TFBGA-96 package. The HRI variant may have a different temperature grade, so verify specifications before use.
Where can I download the NT5AD512M16C4-JRI datasheet PDF?
The NT5AD512M16C4-JRI datasheet is available from Nanya Technology's official product page at https://www.nanya.com/en/Product/4476/NT5AD512M16C4-JRI. It can also be downloaded from distributor sites like LCSC, Datasheets360, and Win Source.
What is the pinout of NT5AD512M16C4-JRI?
The NT5AD512M16C4-JRI uses a 96-ball TFBGA package. The pinout includes address, data, control, and power pins. For detailed pin assignments, refer to the official datasheet from Nanya Technology, which provides the complete ball map and pin functions.
What are the key specifications of NT5AD512M16C4-JRI that engineers should know?
The NT5AD512M16C4-JRI is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V with a data rate of 3200 Mbps. It features a -40°C to +95°C temperature range, TFBGA-96 package, and includes auto self-refresh, temperature sensor, write leveling, and CRC. These specs make it suitable for industrial and high-performance applications.
Is NT5AD512M16C4-JRI the same as K4A8G165WB-BIWE?
No, the NT5AD512M16C4-JRI is a Nanya Technology DDR4 SDRAM, while K4A8G165WB-BIWE is a Samsung DDR4 SDRAM. Both are 8Gb, 512Mx16, and operate at 1.2V, but they are from different manufacturers and may have different timing parameters and package variations. They are not identical, but may be functionally equivalent in some designs.
What is the best Samsung equivalent for NT5AD512M16C4-JRI?
A suitable Samsung equivalent for NT5AD512M16C4-JRI is the K4A8G165WB-BIWE, which is an 8Gb DDR4 SDRAM with 512Mx16 organization and 1.2V supply. It is listed in the XAIPART site MPN list. However, verify pin compatibility and timing parameters before substitution.

工程参考数据: NT5AD512M16C4-JRI ——对比、设计指导和合规信息。

选型指南

Choose the NT5AD512M16C4-JRI when you need an industrial-grade DDR4 SDRAM with -40°C to +95°C operation, 8Gb density, and 3200 Mbps speed. It is ideal for industrial controllers, networking, and embedded systems requiring high reliability. If your application is commercial (0°C to +70°C), the NT5AD512M16C4-JR offers a lower-cost alternative. For automotive or harsh environments, the JRI's wide temperature range is essential. Cross-brand options like Micron MT40A512M16JY-07EAIT:B or Samsung K4A8G165WB-BIWE can be used as second sources, but verify timing and pinout compatibility. The JRI's built-in temperature sensor and CRC function provide added data integrity, making it a robust choice for mission-critical systems.

与替代料对比

参数 本产品 NT5AD512M16C4-HRI NT5AD512M16C4-JR MT40A512M16JY-07EAIT K4A8G165WB-BIWE H5AN8G6NDJR-XNC
Package TFBGA-96 TFBGA-96 TFBGA-96 B: TFBGA-96 TFBGA-96 TFBGA-96
Brand Nanya Technology Nanya Technology Nanya Technology B: Micron Technology Samsung Electronics SK Hynix
Memory Density 8 Gbit 8 Gbit 8 Gbit B: 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 B: 512M x 16 512M x 16 512M x 16
Data Rate 3200 Mbps 3200 Mbps 3200 Mbps B: 3200 Mbps 3200 Mbps 3200 Mbps
Supply Voltage 1.2 V 1.2 V 1.2 V B: 1.2 V 1.2 V 1.2 V
CRC Function Yes Yes Yes B: Yes Yes Yes

关键差异点

  • Industrial temperature range (-40°C to +95°C) (对比 NT5AD512M16C4-JR)
  • Same-brand drop-in compatibility (对比 NT5AD512M16C4-HRI)
  • Cross-brand availability (对比 MT40A512M16JY-07EAIT:B)

设计说明

For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for address/control and 5 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane beneath the memory device to minimize noise.

The NT5AD512M16C4-JRI operates up to +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal pad; connect it to a large copper pour for heat dissipation. Monitor temperature using the built-in temperature sensor for dynamic thermal management.

Use the ZQ pin with a 240-ohm resistor to ground for calibration. Implement write leveling and dynamic ODT as per DDR4 specifications to improve signal integrity. Keep DQS/DQS# pairs tightly coupled and avoid vias on high-speed signals where possible. Follow JEDEC DDR4 layout guidelines for optimal performance.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
无铅
无卤
Unknown
冲突矿物
Unknown

RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.

数据核验日期: 2026-08-19 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

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相关元器件 & 术语

Nanya Technology NT5AD512M16C4-JRI NT5AD512M16C4-HRI NT5AD512M16C4-JR MT40A512M16JY-07EAIT:B K4A8G165WB-BIWE H5AN8G6NDJR-XNC DDR4 SDRAM SDRAM Memory IC TFBGA-96 BGA Surface Mount RoHS CRC ZQ calibration Write leveling Industrial temperature range Embedded systems Networking equipment
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