NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
Référence : NT5AD512M16C4-JRI ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $94.46 | $94,46 |
| 10 | $89.74 | $897,40 |
| 100 | $85.02 | $8 502,00 |
| 500 | $80.3 | $40 150,00 |
| 1 000 | $75.58 | $75 580,00 |
NT5AD512M16C4-JRI Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and provides higher bandwidth, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through features like on-die termination (ODT) and write leveling. DDR4 is a critical component in modern computing systems, from servers and desktops to embedded and industrial applications.
Key features of the NT5AD512M16C4-JRI include auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination, ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance reliability and performance in demanding environments. The device supports an operating temperature range of -40°C to +95°C, making it suitable for industrial applications.
The NT5AD512M16C4-JRI utilizes advanced CMOS technology and a 96-ball TFBGA package, which offers excellent thermal and electrical performance. The built-in temperature sensor enables efficient thermal management, while the ZQ calibration ensures optimal signal integrity. The CRC function provides error detection for data integrity, which is crucial for mission-critical systems.
Typical applications include data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. Its high density and speed make it ideal for networking equipment, servers, and high-performance embedded systems. The wide temperature range and robust feature set ensure reliable operation in harsh environments.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The ZQ pin requires a 240-ohm resistor to ground for calibration. Follow the DDR4 layout guidelines for signal integrity, including matched trace lengths and proper termination.
Alternatives de remplacement direct pour NT5AD512M16C4-JRI — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16C4-JRI (même facteur de forme et même empreinte) — différant par Data Rate, Package, Supply Voltage, Density, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-HRI
✓ En stock
$45.9375 / unité
Voir la fiche technique →NT5AD512M16C4-JR
✓ En stock
$73.75 / unité
Voir la fiche technique →MT40A512M16JY-07EAIT:B
✓ En stock
$8.1 / unité
Voir la fiche technique →K4A8G165WB-BIWE
✓ En stock
$14.22 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✓ En stock
$55.6818 / unité
Voir la fiche technique →NT5AD512M16C4-JRI Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Memory Density | 8 Gbit |
| Organisation de la mémoire | 512M x 16 |
| Débit de données | 3200 Mbps (DDR4-3200) |
| Tension d'alimentation | 1.2 V |
| Plage de température de fonctionnement | -40°C to +95°C |
| Boîtier | TFBGA-96 |
| Type de montage | Surface Mount |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16C4-JRI
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche E3 | A2 — Address input 2 |
| Broche F1 | A3 — Address input 3 |
| Broche F2 | A4 — Address input 4 |
| Broche F3 | A5 — Address input 5 |
| Broche G1 | A6 — Address input 6 |
| Broche G2 | A7 — Address input 7 |
| Broche G3 | A8 — Address input 8 |
| Broche H1 | A9 — Address input 9 |
| Broche H2 | A10/AP — Address input 10 / Auto-precharge |
| Broche H3 | A11 — Address input 11 |
| Broche J1 | A12/BC — Address input 12 / Burst chop |
| Broche J2 | A13 — Address input 13 |
| Broche J3 | A14 — Address input 14 |
| Broche K1 | A15 — Address input 15 |
| Broche K2 | A16 — Address input 16 |
| Broche K3 | A17 — Address input 17 |
| Broche L1 | BA0 — Bank address 0 |
| Broche L2 | BA1 — Bank address 1 |
| Broche L3 | BA2 — Bank address 2 |
| Broche M1 | BG0 — Bank group 0 |
| Broche M2 | BG1 — Bank group 1 |
| Broche M3 | CK — Clock input |
| Broche N1 | CK# — Complementary clock input |
| Broche N2 | CKE — Clock enable |
| Broche N3 | CS# — Chip select |
| Broche P1 | RAS# — Row address strobe |
| Broche P2 | CAS# — Column address strobe |
| Broche P3 | WE# — Write enable |
| Broche R1 | ODT — On-die termination |
| Broche R2 | RESET# — Reset |
| Broche R3 | ZQ — Calibration reference |
| Broche T1 | DM0 — Data mask 0 |
| Broche T2 | DQS0 — Data strobe 0 |
| Broche T3 | DQS0# — Complementary data strobe 0 |
Applications typiques
NT5AD512M16C4-JRI convient pour 6 applications: Industrial Controllers, Networking Equipment, Embedded Computing Modules, Data Storage Systems, Automotive Infotainment, Medical Devices.
Industrial Controllers
The NT5AD512M16C4-JRI's industrial temperature range (-40°C to +95°C) and high reliability features like CRC and auto self-refresh make it ideal for PLCs and industrial PCs. Its 8Gb density supports complex control algorithms and data logging. The 1.2V operation reduces power consumption in always-on systems, while the TFBGA-96 package allows compact PCB designs. With DDR4-3200 speed, it handles real-time data processing efficiently, ensuring smooth operation in factory automation and process control.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the NT5AD512M16C4-JRI provides high-bandwidth memory for packet buffering and routing tables. Its 3200 Mbps data rate ensures low-latency packet processing, while the 8Gb capacity supports large forwarding databases. The built-in temperature sensor and auto self-refresh enhance reliability in 24/7 operation. The 1.2V supply reduces power dissipation in dense line cards, and the TFBGA-96 package enables high-density board layouts.
Recommandé
Embedded Computing Modules
The NT5AD512M16C4-JRI is well-suited for embedded computing modules like COM Express and Qseven. Its 8Gb density provides ample memory for operating systems and applications, while the DDR4-3200 speed ensures fast data access. The industrial temperature grade allows deployment in outdoor and automotive environments. The 1.2V operation is efficient for battery-powered devices, and the small TFBGA-96 package fits space-constrained designs. Features like write leveling and dynamic ODT improve signal integrity in multi-rank configurations.
Recommandé
Data Storage Systems
In SSDs, NAS, and RAID controllers, the NT5AD512M16C4-JRI serves as cache memory, accelerating data access and improving throughput. Its high speed (DDR4-3200) and 8Gb capacity enable large cache pools, while the CRC function ensures data integrity. The auto self-refresh and temperature sensor help manage thermal stress in high-activity storage environments. The 1.2V supply reduces power consumption in always-on storage arrays, and the TFBGA-96 package supports compact drive designs.
Recommandé
Automotive Infotainment
The NT5AD512M16C4-JRI's wide temperature range and reliability features make it suitable for automotive infotainment systems, including head units and digital clusters. Its 8Gb density supports navigation maps, multimedia playback, and instrument cluster graphics. The DDR4-3200 speed ensures smooth rendering and fast boot times. The 1.2V operation is compatible with automotive power rails, and the TFBGA-96 package withstands vibration and thermal cycling. Features like auto precharge and data mask enhance performance in real-time graphics.
Recommandé
Medical Devices
In medical imaging, patient monitors, and diagnostic equipment, the NT5AD512M16C4-JRI provides reliable high-speed memory for data acquisition and processing. Its industrial temperature range ensures operation in clinical environments, while the CRC function safeguards critical patient data. The 8Gb capacity supports large image buffers and complex algorithms. The 1.2V supply is suitable for low-power medical devices, and the TFBGA-96 package allows compact designs for portable equipment. Auto self-refresh maintains data integrity during standby.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16C4-JRI — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-HRI | NT5AD512M16C4-JR | MT40A512M16JY-07EAIT | K4A8G165WB-BIWE | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | B: TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | B: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Density | 8 Gbit | 8 Gbit | 8 Gbit | B: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | B: 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | B: 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | B: 1.2 V | 1.2 V | 1.2 V |
| CRC Function | Yes | Yes | Yes | B: Yes | Yes | Yes |
Principaux différenciateurs
- Industrial temperature range (-40°C to +95°C) (vs NT5AD512M16C4-JR)
- Same-brand drop-in compatibility (vs NT5AD512M16C4-HRI)
- Cross-brand availability (vs MT40A512M16JY-07EAIT:B)
Notes de conception
For DDR4 routing, maintain 50-ohm single-ended and 100-ohm differential impedance. Keep trace lengths matched within 10 mils for address/control and 5 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane beneath the memory device to minimize noise.
The NT5AD512M16C4-JRI operates up to +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal pad; connect it to a large copper pour for heat dissipation. Monitor temperature using the built-in temperature sensor for dynamic thermal management.
Use the ZQ pin with a 240-ohm resistor to ground for calibration. Implement write leveling and dynamic ODT as per DDR4 specifications to improve signal integrity. Keep DQS/DQS# pairs tightly coupled and avoid vias on high-speed signals where possible. Follow JEDEC DDR4 layout guidelines for optimal performance.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
