W25M02GWZEIG - 2G-bit Serial SLC NAND Flash, 1.8V SPI | Winbond
料号： W25M02GWZEIG ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $6.79 | $6.79 |
| 10 | $6.12 | $61.20 |
| 100 | $5.45 | $545.00 |
| 500 | $4.79 | $2,395.00 |
| 1,000 | $4.22 | $4,220.00 |
W25M02GWZEIG 概述
A Serial NAND flash is a non-volatile memory that uses the SPI bus to expose the page-oriented programming and block-oriented erase operations of NAND, while adding an internal controller that hides the 2K-byte page and 128K-byte block geometry from the host MCU. The category hierarchy is: NAND flash -> non-volatile memory -> memory IC -> semiconductor. Compared with NOR flash, NAND offers higher density per die at lower cost-per-bit, but requires ECC and wear-leveling at the application layer; the W25M02GWZEIG adds internal ECC and configurable bad-block tables to reduce that host overhead.
Key features of the W25M02GWZEIG include 2 Gbit total density (256 Mbytes), 2 Kbyte pages, 64 Kbyte spare/parameter blocks, dual-die addressing via die-select CS logic, 100K endurance cycles per block, and 10-year data retention. The 1.8V VCC range (1.7V to 1.95V) suits battery-powered IoT devices, and the wide operating temperature range of -40C to +85C covers industrial and consumer profiles. Quad SPI mode delivers up to 52 Mbyte/s read throughput, while continuous-read mode lets the host stream sequential pages without re-issuing the read command. Internal ECC is configurable up to 8-bit per 512-byte sector with hardware reporting through status registers.
The W25M02GWZEIG is built on Winbond's 46 nm SLC NAND process, where each cell stores a single bit for high endurance and predictable retention, in contrast to MLC/TLC used in higher-density cards. The dual-die stack uses independent chip-enable logic so each die appears as a contiguous 1 Gbit logical array; this is transparent to standard SPI drivers that treat the device as a single 2 Gbit array. Compared to a discrete W25N01GW pair, the MCP reduces PCB area by ~50% and simplifies routing.
Typical applications include IoT edge nodes storing firmware and telemetry, smart-home hubs, wearable health monitors, point-of-sale terminals, and industrial sensor loggers. The 1.8V supply also makes the part a natural fit for low-power MCUs such as the STM32L4 and Ambiq Apollo series. In designs that already use a small NOR for boot, the W25M02GWZEIG can sit beside it as the larger mass-storage bank without changing the host SPI bus topology.
When designing with the W25M02GWZEIG, route the CS#, SCLK, IO0-IO3, and WP#/HOLD# signals as a 50-ohm impedance-controlled group and place a 100 nF decoupling capacitor within 3 mm of the VCC pad to suppress switching transients during Quad SPI reads. Confirm host SPI mode timing against the Winbond datasheet's tV and tSU figures and budget ECC bytes inside each 2K-byte page if your host driver reads raw pages.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what is printed in the manufacturer datasheet, giving engineers a single reference for selecting, sourcing, and qualifying the W25M02GWZEIG.
直接替换替代料： W25M02GWZEIG ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： W25M02GWZEIG （相同外形与封装尺寸） ——差异在于 Block Size, Density, MSL Level, Memory Type, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
W25M02GVZEIG
✅ 直接替换📋 参考替代料（不在目录中）
W25M02GWZEIG TR
✅ 直接替换📋 参考替代料（不在目录中）
W25M02GWZEIG/1
✅ 直接替换📋 参考替代料（不在目录中）
W25N01GWZEIG
✅ 直接替换📋 参考替代料（不在目录中）
W25N01GVZEIG
✅ 直接替换📋 参考替代料（不在目录中）
W25M02GWZEIG 最大额定值与电气特性
| 存储器类型 | Serial NAND Flash (SLC) |
| Density | 2 Gbit (2 x 1 Gbit stacked die) |
| Architecture | Multi-Chip Package (MCP), two W25N01GW die |
| Supply Voltage VCC | 1.7 V to 1.95 V (1.8 V typ) |
| 接口 | Standard SPI, Dual SPI, Quad SPI |
| 最大时钟频率 | 104 MHz |
| Page Size | 2048 bytes + 64 bytes spare |
| Block Size | 64 pages (131,072 bytes) |
| Endurance | 100,000 program/erase cycles per block |
| Data Retention | 10 years typical |
| Internal ECC | Configurable, up to 8-bit per 512-byte sector |
| 工作温度 | -40 C to +85 C (industrial) |
| 封装 | WSON-8 (8x6 mm) with exposed pad |
| 安装类型 | Surface Mount |
| MSL 等级 | MSL3 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant (ROHS3) |
| 无卤 | Yes |
W25M02GWZEIG 引脚配置
| 引脚 1 | CS# — Chip Select (active low) |
| 引脚 2 | DO / IO1 — Serial data out / IO1 in Quad SPI mode |
| 引脚 3 | WP# / IO2 — Write Protect (active low) / IO2 in Quad SPI mode |
| 引脚 4 | GND — Ground reference |
| 引脚 5 | SI / IO0 — Serial data in / IO0 in Quad SPI mode |
| 引脚 6 | SCLK — Serial clock input |
| 引脚 7 | HOLD# / IO3 — Hold (active low) / IO3 in Quad SPI mode |
| 引脚 8 | VCC — 1.8V power supply |
典型应用
W25M02GWZEIG 适用于 6 应用s: IoT Edge Sensor Data Logging, Smart Home Hub Firmware Storage, Wearable Health Monitor Logging, Industrial Sensor Data Recorder, Point-of-Sale Terminal Transaction Log, Connected Audio Streaming Buffer.
IoT Edge Sensor Data Logging
The W25M02GWZEIG's 2 Gbit SLC NAND density and 1.8V supply make it a strong fit for IoT edge sensor data loggers that capture high-frequency telemetry and stream it back to a gateway at scheduled intervals. Its 100K program/erase cycles per block and internal ECC offload bit-flip correction from resource-constrained MCUs, while the 104 MHz Quad SPI interface delivers ~52 Mbyte/s throughput when the logger flushes its buffer. Placed beside a low-power MCU such as the STM32L4, the W25M02GWZEIG shares the 1.8V rail without a level translator and consumes milliwatts during active reads. Unlike a small NOR, the 2K-byte page architecture scales naturally to multi-sensor packets, reducing driver complexity at the cost of byte-level random access.
推荐
Smart Home Hub Firmware Storage
Smart home hubs benefit from the W25M02GWZEIG's 2 Gbit density as a firmware and configuration vault, with the SLC NAND's 100K endurance cycle rating well above the few-thousand-write updates a hub experiences over its lifetime. The 1.8V VCC aligns with low-power hub SoCs, and Quad SPI at 104 MHz keeps OTA firmware transfer latency low. Mounted alongside an Ambiq Apollo MCU, the W25M02GWZEIG shares the regulator rail and provides continuous-read streaming for fast boot. Unlike NOR flash at this density, the part is roughly 30% lower cost per bit, a key driver for connected-home BOM targets.
推荐
Wearable Health Monitor Logging
Wearables such as continuous-glucose monitors and fitness trackers use the W25M02GWZEIG as a non-volatile buffer for minute-by-minute biosignals, exploiting its 2 Gbit capacity and small WSON-8 footprint that fits under a coin-cell holder. The 1.8V supply pairs with low-power SoCs, while the SLC endurance of 100K cycles per block is more than sufficient for the multi-year write traffic of a personal monitor. In a typical design the flash is wired directly to the host's Quad SPI controller, and the device's 104 MHz clock allows fast session dumps to a paired phone. Compared with SD-card solutions, the W25M02GWZEIG removes a mechanical connector and improves shock tolerance.
推荐
Industrial Sensor Data Recorder
The W25M02GWZEIG is well matched to industrial sensor data recorders that accumulate vibration, temperature, or process telemetry between maintenance cycles, leveraging its 2 Gbit SLC NAND density and -40C to +85C operating range. The part's continuous-read mode and 104 MHz Quad SPI ceiling let field engineers retrieve logged data quickly through the same SPI port used by the host MCU. Placed next to an STM32H7 or similar host, the W25M02GWZEIG shares a 1.8V rail via LDO and tolerates the long write-burst periods typical of process monitors. Unlike eMMC, the part exposes raw NAND pages for custom wear-leveling, which is a plus when retention predictability matters more than managed FTL.
推荐
Point-of-Sale Terminal Transaction Log
Point-of-sale terminals use the W25M02GWZEIG as a tamper-resistant local transaction buffer where 2 Gbit of SLC NAND provides months of audit-log retention without server round-trips. The 1.8V operation pairs with modern POS SoCs, and the device's internal ECC keeps a 5-year retention profile achievable even with frequent small writes. In a typical terminal the W25M02GWZEIG sits on the same SPI bus as a secure element, and its 104 MHz Quad SPI mode lets the host stream logs during end-of-day reconciliation. Compared with raw EEPROM, the part offers two to three orders of magnitude more density at a similar per-bit cost.
推荐
Connected Audio Streaming Buffer
Audio streaming accessories such as voice-front-end boards and portable speakers use the W25M02GWZEIG as a large local buffer for wake-word models and pre-recorded prompts, taking the load off the network during boot. The 2 Gbit density fits large neural-network coefficients, while the 104 MHz Quad SPI clock keeps fetch latency under the 20 ms budget typical of voice pipelines. Hosted beside an Ambiq Apollo or ESP32-S3 SoC, the W25M02GWZEIG shares a 1.8V rail and tolerates streaming reads. Unlike SD cards, the part has no moving boot time and no FAT license burden, simplifying production firmware.
推荐
推荐产品汇总
工程参考数据： W25M02GWZEIG ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | W25M02GVZEIG | W25M02GWZEIG TR | W25M02GWZEIG/1 | W25N01GWZEIG | W25N01GVZEIG |
|---|---|---|---|---|---|---|
| Package | WSON-8 (8x6 mm) | WSON-8 (8x6 mm) - same | WSON-8 (8x6 mm) - same | WSON-8 (8x6 mm) - same | WSON-8 (8x6 mm) - same | WSON-8 (8x6 mm) - same |
| Brand | Winbond | Winbond | Winbond | Winbond | Winbond | Winbond |
| Memory Density | 2 Gbit (2 x 1 Gbit) | 2 Gbit (2 x 1 Gbit) | 2 Gbit (2 x 1 Gbit) | 2 Gbit (2 x 1 Gbit) | 1 Gbit (single die) | 1 Gbit (single die) |
| Supply Voltage | 1.7 V to 1.95 V (1.8 V) | 2.7 V to 3.6 V (3.3 V) | 1.7 V to 1.95 V (1.8 V) | 1.7 V to 1.95 V (1.8 V) | 1.7 V to 1.95 V (1.8 V) | 2.7 V to 3.6 V (3.3 V) |
| Max SPI Clock | 104 MHz | 104 MHz | 104 MHz | 104 MHz | 104 MHz | 104 MHz |
| SPI Modes | Standard / Dual / Quad | Standard / Dual / Quad | Standard / Dual / Quad | Standard / Dual / Quad | Standard / Dual / Quad | Standard / Dual / Quad |
| Internal ECC | Yes (up to 8-bit per 512B) | Yes (up to 8-bit per 512B) | Yes (up to 8-bit per 512B) | Yes (up to 8-bit per 512B) | Yes (up to 8-bit per 512B) | Yes (up to 8-bit per 512B) |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
关键差异点
- Dual-die MCP density in a single SPI slot （对比 W25N01GWZEIG)
- 1.8 V native supply （对比 W25M02GVZEIG)
- Internal ECC with up to 8-bit correction （对比 W25M02GWZEIG/1)
设计说明
Estimated: at VCC = 1.8 V and 30 mA active read current the W25M02GWZEIG draws roughly 54 mW. Place a 100 nF X7R decoupling capacitor within 3 mm of the VCC pad, and add a 4.7 uF bulk capacitor on the same rail to absorb Quad SPI burst transients. Avoid tying VCC directly to a high-impedance source; a regulator with at least 100 mA headroom prevents brown-outs during page-program operations.
Route CS#, SCLK, IO0/IO1/IO2/IO3 and WP#/HOLD# as a tightly matched group with 50-ohm characteristic impedance and length matching within 5 mm. Keep the trace stubs to the WSON-8 land pattern below 2 mm and provide a continuous ground reference plane on the layer immediately beneath the flash to suppress crosstalk into adjacent analog sections.
Do not exceed the 1.95 V VCC absolute maximum; even brief transients above 2.0 V can damage the NAND cell array. Always issue the 0xFF reset command after power-up to bring the device into a known state, and check the BUSY bit in status register 1 before each read or program command. Designers mixing 1.8 V and 3.3 V rails should confirm the host GPIO tolerance before substituting a 3.3 V Winbond SPI NAND on this footprint.
Solder the exposed thermal pad (EP) to a continuous copper pour that ties to GND through at least four thermal vias (0.3 mm drill, 0.5 mm pitch). This improves heat spreading during continuous-read bursts and helps the part meet the 100K endurance spec by reducing junction temperature. Estimated: theta_JA on a 1 sq inch 4-layer pour is approximately 35 C/W.
合规信息
ROHS3 compliance confirmed via ICBOMS listing. Halogen-free per Winbond product page. AEC-Q100 not applicable for commercial-grade NAND flash; Winbond does not publish an automotive grade for the W25M02GWZEIG family.
