IRFR5505TRPBF vs IRLR9343TRPBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRFR5505TRPBF بواسطة Infineon و IRLR9343TRPBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRFR5505TRPBF | IRLR9343TRPBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | IR HEXFET |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | 105 mOhm |
| Total Gate Charge (Qg) | 21.3 nC | 31 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| درجة حرارة الوصلة التشغيلية | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| العلبة | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) Surface Mount |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Part Number | — | IRLR9343TRPBF |
| FET Type | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -20 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| نطاق درجة حرارة التشغيل | — | [DATA_NEEDED: Tj min/max operating range] |
| مستوى MSL | — | 1 |
| Optimized Application | — | Class-D audio amplifier output stages |