IRFR5505TRPBF vs IRLR9343TRPBF Perbandingan
Perbandingan bersamaan detil IRFR5505TRPBF dari Infineon dan IRLR9343TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5505TRPBF | IRLR9343TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | IR HEXFET |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | — |
| Pulsed Drain Current (IDM) | -72 A | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | 105 mOhm |
| Total Gate Charge (Qg) | 21.3 nC | 31 nC (typical) |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| Paket | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) Surface Mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Part Number | — | IRLR9343TRPBF |
| FET Type | — | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc=25C | — | -20 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Tj min/max operating range] |
| Level MSL | — | 1 |
| Optimized Application | — | Class-D audio amplifier output stages |