IRFS7440TRLPBF vs IRFB4310PBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRFS7440TRLPBF بواسطة Infineon و IRFB4310PBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRFS7440TRLPBF | IRFB4310PBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tc=25C | 120 A | 130 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Tc=25C | 208 W | — |
| On-Resistance (RDS(on)) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 90 nC (typical) | 170 nC |
| Gate Drive Voltage (optimized) | 10 V (normal level) | — |
| Operating Frequency Range (optimized) | <100 kHz | — |
| العلبة | TO-263 (D2PAK), surface mount | TO-220AB (through-hole) |
| نوع التركيب | Surface Mount | Through Hole |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: junction temperature range] | -55C to +175C (junction) |
| حالة RoHS | Compliant (lead-free) | Compliant |
| Qualification | JEDEC standard | — |
| نوع الترانزستور | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 7 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |
| Lead-Free | — | Yes (Pb-free PBF suffix) |