IRFS7440TRLPBF vs IRFB4310PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFS7440TRLPBF tarafından Infineon ve IRFB4310PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFS7440TRLPBF IRFB4310PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc=25C 120 A 130 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 170 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Paket TO-263 (D2PAK), surface mount TO-220AB (through-hole)
Montaj Türü Surface Mount Through Hole
İşletim Sıcaklığı Aralığı [DATA_NEEDED: junction temperature range] -55C to +175C (junction)
RoHS Durumu Compliant (lead-free) Compliant
Qualification JEDEC standard —
Transistor Türü — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max at VGS=10V — 7 mOhm
On-Resistance RDS(on) typical at VGS=10V — 5.6 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Rated — Yes
Lead-Free — Yes (Pb-free PBF suffix)

Dökümanlar & Kaynaklar

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