K9MDG08U5M vs K9DVGB8U5M مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9MDG08U5M بواسطة Samsung Electronics و K9DVGB8U5M بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | K9MDG08U5M | K9DVGB8U5M |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| نوع الذاكرة | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | — |
| التنظيم | 16G x 8 bit | [DATA_NEEDED: capacity organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| الواجهة | Asynchronous x8 multiplexed address/data | Asynchronous x8-bit I/O |
| العلبة | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | [DATA_NEEDED: package type and dimensions] |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| نوع التركيب | Surface Mount | Surface Mount |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: main page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: erase block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | [DATA_NEEDED: page program time] |
| حالة RoHS | unknown | [DATA_NEEDED: RoHS compliance] |
| جهد التغذية | — | [DATA_NEEDED: VCC range] |
| Read Time (tR) | — | [DATA_NEEDED: page read cycle time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: retention specification] |
| Access Interface Signals | — | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | — | Host-managed (controller ECC and bad-block table required) |