K9MDG08U5M vs K9DVGB8U5M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9MDG08U5M disebabkan oleh Samsung Electronics dan K9DVGB8U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9MDG08U5M | K9DVGB8U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | MLC Large Block NAND Flash | NAND Flash |
| Density | 16 Gbit (2 GB) | — |
| Organisasi | 16G x 8 bit | [DATA_NEEDED: capacity organization] |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antaramuka | Asynchronous x8 multiplexed address/data | Asynchronous x8-bit I/O |
| Kemasan | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | [DATA_NEEDED: package type and dimensions] |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: main page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: erase block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | [DATA_NEEDED: page program time] |
| Status RoHS | unknown | [DATA_NEEDED: RoHS compliance] |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: VCC range] |
| Read Time (tR) | — | [DATA_NEEDED: page read cycle time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: retention specification] |
| Access Interface Signals | — | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | — | Host-managed (controller ECC and bad-block table required) |