K9MDG08U5M vs K9DVGB8U5M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9MDG08U5M sa pamamagitan ng Samsung Electronics at K9DVGB8U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Nakahanda
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9MDG08U5M K9DVGB8U5M
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory MLC Large Block NAND Flash NAND Flash
Density 16 Gbit (2 GB) —
Organisasyon 16G x 8 bit [DATA_NEEDED: capacity organization]
Cell Type MLC (2 bits per cell) —
Supply Voltage Min 2.7 V —
Supply Voltage Max 3.6 V —
Interface Asynchronous x8 multiplexed address/data Asynchronous x8-bit I/O
Packhaging 48-pin TSOP1 dual stacked, 12 mm x 20 mm [DATA_NEEDED: package type and dimensions]
Terminals 48 —
Circuits 1 —
Die Configuration Dual stacked —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time (tR) [DATA_NEEDED: tR] —
Program Time (tPROG) [DATA_NEEDED: tPROG] [DATA_NEEDED: page program time]
Tindminan RoHS unknown [DATA_NEEDED: RoHS compliance]
Volte ng Pagbibigay — [DATA_NEEDED: VCC range]
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

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