UCC21550BDWR vs UCC21550AQDWKRQ1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC21550BDWR بواسطة Texas Instruments و UCC21550AQDWKRQ1 بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ نشط
مقارنة المواصفات
| المعامل | UCC21550BDWR | UCC21550AQDWKRQ1 |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| تكوين الخرج | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | — |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DIS pin) |
| Junction Temperature Range | -40 C to +150 C | — |
| العلبة | 16-SOIC (DW) | 14-SOIC (DWK) |
| نوع التركيب | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | — |
| Product Type | — | Reinforced isolated dual-channel gate driver |
| Number of Channels | — | 2 |
| Isolation Technology | — | Capacitive coupling |
| Configuration | — | Two low-side, two high-side, or half-bridge |
| Dead Time | — | Programmable via DT pin |
| Input Threshold Logic | — | TTL and CMOS compatible |
| Target Switch Types | — | Power MOSFET, SiC, GaN, IGBT |
| Qualification | — | Automotive (Q1) |
| Part Marking | — | 21550AQ |
| نطاق درجة حرارة التشغيل | — | [DATA_NEEDED: Operating Temperature Range] |
| Supply Voltage Range (VDD) | — | [DATA_NEEDED: Supply Voltage Range] |