UCC21550BDWR vs UCC21550AQDWKRQ1 Perbandingan

Perbandingan bersamaan detil UCC21550BDWR dari Texas Instruments dan UCC21550AQDWKRQ1 dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum UCC21550BDWR UCC21550AQDWKRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes Yes (DIS pin)
Junction Temperature Range -40 C to +150 C —
Paket 16-SOIC (DW) 14-SOIC (DWK)
Tipe Mounting Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] —
Product Type — Reinforced isolated dual-channel gate driver
Number of Channels — 2
Isolation Technology — Capacitive coupling
Configuration — Two low-side, two high-side, or half-bridge
Dead Time — Programmable via DT pin
Input Threshold Logic — TTL and CMOS compatible
Target Switch Types — Power MOSFET, SiC, GaN, IGBT
Qualification — Automotive (Q1)
Part Marking — 21550AQ
Rentang Suhu Kerja — [DATA_NEEDED: Operating Temperature Range]
Supply Voltage Range (VDD) — [DATA_NEEDED: Supply Voltage Range]

Spek dan Sumber

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