UCC21550BDWR vs UCC21550AQDWKRQ1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21550BDWR disebabkan oleh Texas Instruments dan UCC21550AQDWKRQ1 disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Texas Instruments
UCC21550AQDWKRQ1 UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI

UCC21550AQDWKRQ1 ✓ Aktif

Pengandingan Spesifikasi

Parametr UCC21550BDWR UCC21550AQDWKRQ1
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Konfigurasi Output Dual-channel (dual low-side, dual high-side, or half-bridge) —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling, reinforced isolation —
Isolation Voltage 5000 Vrms 5000 Vrms
CMTI (Common-Mode Transient Immunity) > 125 V/ns —
VDD Output Supply Range Up to 25 V —
UVLO Threshold 8 V (VDD UVLO) —
Programmable Dead Time Yes —
Disable Function Yes Yes (DIS pin)
Junction Temperature Range -40 C to +150 C —
Kemasan 16-SOIC (DW) 14-SOIC (DWK)
Jenis Pemasangan Surface Mount Surface Mount
Driven Devices Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Status RoHS [DATA_NEEDED: RoHS status] —
Product Type — Reinforced isolated dual-channel gate driver
Number of Channels — 2
Isolation Technology — Capacitive coupling
Configuration — Two low-side, two high-side, or half-bridge
Dead Time — Programmable via DT pin
Input Threshold Logic — TTL and CMOS compatible
Target Switch Types — Power MOSFET, SiC, GaN, IGBT
Qualification — Automotive (Q1)
Part Marking — 21550AQ
Gambaran Suhu Operasi — [DATA_NEEDED: Operating Temperature Range]
Supply Voltage Range (VDD) — [DATA_NEEDED: Supply Voltage Range]

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