UCC21550BQDWRQ1 vs UCC21550ADWR مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC21550BQDWRQ1 بواسطة Texas Instruments و UCC21550ADWR بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ نشطTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ نشطمقارنة المواصفات
| المعامل | UCC21550BQDWRQ1 | UCC21550ADWR |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | 2 (dual) |
| Configuration | Two low-side / two high-side / half-bridge | Dual low-side, dual high-side, or half-bridge |
| Dead Time | Programmable (external resistor) | Programmable |
| Disable Function | Yes | Yes (DISABLE pin) |
| UVLO Threshold | 8 V (driver supply) | — |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| العلبة | 16-SOIC (DW) | 16-SOIC (DW) |
| نوع التركيب | Surface Mount | Surface Mount |
| جهد التغذية التشغيلي | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Driven Devices | — | Power MOSFET, SiC, GaN, IGBT |
| Junction Temperature Range | — | -40C to +150C |
| حالة RoHS | — | Compliant |