UCC21550BQDWRQ1 vs UCC21550ADWR Perbandingan

Perbandingan bersamaan detil UCC21550BQDWRQ1 dari Texas Instruments dan UCC21550ADWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum UCC21550BQDWRQ1 UCC21550ADWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Dual-channel reinforced isolated gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling Reinforced, capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Grade Reinforced isolation —
Number of Channels 2 2 (dual)
Configuration Two low-side / two high-side / half-bridge Dual low-side, dual high-side, or half-bridge
Dead Time Programmable (external resistor) Programmable
Disable Function Yes Yes (DISABLE pin)
UVLO Threshold 8 V (driver supply) —
Target Transistors Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Automotive Qualification AEC-Q100 qualified (Q1) —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Paket 16-SOIC (DW) 16-SOIC (DW)
Tipe Mounting Surface Mount Surface Mount
Tegangan Pemuat Kerja [DATA_NEEDED: VCCI / VDD operating range] —
Common-Mode Transient Immunity [DATA_NEEDED: CMTI value] —
CMTI — > 125 V/ns
Max VDD Output Supply — 25 V
UVLO Threshold Option — 5 V
Driven Devices — Power MOSFET, SiC, GaN, IGBT
Junction Temperature Range — -40C to +150C
Status RoHS — Compliant

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