UCC21550BQDWRQ1 vs UCC21550ADWR Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci UCC21550BQDWRQ1 disebabkan oleh Texas Instruments dan UCC21550ADWR disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr UCC21550BQDWRQ1 UCC21550ADWR
Merek Texas Instruments Texas Instruments
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Dual-channel reinforced isolated gate driver —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Type Capacitive coupling Reinforced, capacitive coupling
Isolation Voltage 5000 Vrms 5000 Vrms
Isolation Grade Reinforced isolation —
Number of Channels 2 2 (dual)
Configuration Two low-side / two high-side / half-bridge Dual low-side, dual high-side, or half-bridge
Dead Time Programmable (external resistor) Programmable
Disable Function Yes Yes (DISABLE pin)
UVLO Threshold 8 V (driver supply) —
Target Transistors Power MOSFET, SiC MOSFET, GaN FET, IGBT —
Automotive Qualification AEC-Q100 qualified (Q1) —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Kemasan 16-SOIC (DW) 16-SOIC (DW)
Jenis Pemasangan Surface Mount Surface Mount
Tegangan Pemberi Arus Operasi [DATA_NEEDED: VCCI / VDD operating range] —
Common-Mode Transient Immunity [DATA_NEEDED: CMTI value] —
CMTI — > 125 V/ns
Max VDD Output Supply — 25 V
UVLO Threshold Option — 5 V
Driven Devices — Power MOSFET, SiC, GaN, IGBT
Junction Temperature Range — -40C to +150C
Status RoHS — Compliant

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