IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN04S7N006TATMA1 ✓ نشطIAUCN04S7N006TATMA1 نظرة عامة
What is an N-channel power MOSFET? An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch whose drain-source channel uses electron flow as the majority carrier. It belongs to the broader category of discrete power semiconductors, which sits inside power management and motor/motion conversion. The "40 V" rating defines the maximum drain-to-source blocking voltage the device can sustain when off, and a low R_DS(on) directly reduces conduction losses in high-current paths such as automotive 12 V/24 V systems.
Key features of the IAUCN04S7N006 include 0.63 mΩ typical R_DS(on) at V_GS = 10 V, automotive-grade qualification per Infineon's automotive MOSFET line, an exposed-lead package for low thermal resistance, and compatibility with logic-level gate drive when biased at 4.5 V V_GS. The PG-LHDSO-10-3 footprint is optimized for top-side cooling with a large solderable thermal pad.
The OptiMOS 7 cell architecture uses a shielded-gate trench design that simultaneously reduces gate charge (Q_G), output charge (Q_OSS), and reverse-recovery charge (Q_RR). Compared to previous OptiMOS generations, this delivers lower switching losses at high dV/dt, allowing higher PWM frequencies in motor drives without sacrificing efficiency.
Typical applications include 12 V and 24 V automotive BLDC motor drives (EPS, water pumps, oil pumps, fan control), high-current DC-DC converter high-side and low-side switches, battery protection in 12 V/24 V Li-ion packs, and industrial solenoid drivers. The very low R_DS(on) of 0.63 mΩ makes it well-suited to continuous high-current paths where conduction loss dominates thermal budget.
When designing with this part, keep the gate-drive loop compact and use Kelvin-source connection if the package exposes one. Estimate: at 100 A continuous, conduction loss alone is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, so the PCB copper pour and thermal via array must be sized accordingly.
This page synthesizes Infineon distributor pricing, drop-in alternatives, and practical design notes not all consolidated in the manufacturer datasheet.
بدائل مباشرة لـ IAUCN04S7N006TATMA1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IAUCN04S7N006TATMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Mounting Type, Automotive Qualification, Technology, Product Family.
IAUCN04S7N037GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7L042GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7L050HATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7N015GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7N027GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7N019GATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IAUCN04S7N006TATMA1 الحدود القصوى والخصائص الكهربائية
| Polarity | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, T_j) | 425 A |
| Power Dissipation (P_D, T_C) | 205 W |
| R_DS(on) (typ, V_GS=10V) | 0.63 mΩ |
| Technology | OptiMOS 7 (shielded-gate trench) |
| العلبة | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| نوع التركيب | Surface Mount |
| Automotive Grade | Yes (Infineon automotive MOSFET line) |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
تكوين أطراف IAUCN04S7N006TATMA1
| دبوس 1 | GATE — Gate drive input |
| دبوس 2 | DRAIN — Drain terminal (high-current) |
| دبوس 3 | DRAIN — Drain terminal (high-current) |
| دبوس 4 | DRAIN — Drain terminal (high-current) |
| دبوس 5 | DRAIN — Drain terminal (high-current) |
| دبوس 6 | SOURCE — Source terminal |
| دبوس 7 | SOURCE — Source terminal |
| دبوس 8 | SOURCE — Source terminal |
| دبوس 9 | NC — Not connected (per datasheet) |
| دبوس 10 | NC — Not connected (per datasheet) |
| دبوس PAD | DRAIN/SOURCE (exposed pad) — Exposed thermal pad - solder to PCB copper pour for cooling |
منطقة التشغيل الآمن
التطبيقات النموذجية
IAUCN04S7N006TATMA1 مناسب لـ 6 التطبيقs: Automotive 12V/24V BLDC Motor Drive (EPS, Pumps, Fans), High-Current 12V/24V DC-DC Converter Power Stage, Battery Protection & Disconnect Switch, Industrial Solenoid & Relay Replacement, Hot-Swap & ORing Controller Power Switch, Power Distribution & Load Switch Module.
Automotive 12V/24V BLDC Motor Drive (EPS, Pumps, Fans)
The IAUCN04S7N006TATMA1 fits automotive BLDC inverter stages (electric power steering, water/oil pumps, radiator fans) because its 40 V V_DS rating covers the 24 V nominal bus plus ISO 7637-2 transient margin, while its 0.63 mΩ typical R_DS(on) keeps conduction loss below 6 W at 100 A continuous. The PG-LHDSO-10-3 exposed pad supports >200 W dissipation on a properly designed PCB copper pour. Placed in the inverter half-bridge switching at 20-50 kHz PWM, it adds lower switching loss than previous OptiMOS generations thanks to reduced Q_G and Q_OSS. Compared to a discrete IGBT solution, this MOSFET also enables higher PWM frequency and quieter acoustic signature.
موصى به
High-Current 12V/24V DC-DC Converter Power Stage
In high-current buck or boost converter stages for 12 V/24 V automotive rails, the IAUCN04S7N006TATMA1 serves as the synchronous-rectifier or control switch. At 100 A load the 0.63 mΩ R_DS(on) translates to roughly 6.3 W conduction loss, leaving generous thermal margin in a 205 W rated package. The 40 V V_DS handles 24 V bus transients without avalanche, and the OptiMOS 7 shielded-gate trench gives low Q_OSS for reduced dead-time losses. Use the part in the synchronous-rectifier slot where the switch is on most of the time and conduction loss dominates efficiency.
موصى به
Battery Protection & Disconnect Switch
The IAUCN04S7N006TATMA1 works well as a low-side or high-side disconnect switch in 12 V/24 V battery management systems, where its 0.63 mΩ R_DS(on) minimizes voltage drop and self-heating during normal operation. The 40 V V_DS is well above the 24 V load-dump envelope, and the automotive-grade qualification matches the BMS safety requirements. Place a fuse upstream and a TVS across the battery terminals for full ISO 7637-2 compliance; the MOSFET's high 425 A current rating provides ample margin for inrush and short-circuit transients until the fuse clears.
موصى به
Industrial Solenoid & Relay Replacement
In industrial 24 V solenoid drivers replacing mechanical relays, the IAUCN04S7N006TATMA1 enables PWM current profiling (soft-start, hold-current reduction) that mechanical relays cannot provide. Its 0.63 mΩ R_DS(on) reduces I²R heating at the typical 2-5 A solenoid current to a few milliwatts per channel, and the 40 V V_DS handles 24 V flyback transients when paired with a freewheeling diode. The PG-LHDSO-10-3 surface-mount footprint supports high-density multi-channel driver boards where dozens of channels are integrated into a single PCB.
موصى به
Hot-Swap & ORing Controller Power Switch
The IAUCN04S7N006TATMA1 can be used as the main pass element in a 12 V/24 V hot-swap or ORing controller, where its 0.63 mΩ R_DS(on) keeps the steady-state voltage drop under 70 mV at 100 A. During inrush, the gate-drive circuit ramps V_GS to limit dV/dt and dI/dt, and the 40 V V_DS rating provides robust avalanche margin if a short-circuit event occurs. Use the exposed-pad copper pour to spread the heat from momentary inrush currents (typically 5-20× steady state), and verify that the gate-driver can sink enough current to turn the part off quickly during fault events.
موصى به
Power Distribution & Load Switch Module
The IAUCN04S7N006TATMA1 serves as a high-current load switch in zonal automotive power distribution modules, replacing fuses and mechanical relays with a software-controlled electronic switch. Its 0.63 mΩ R_DS(on) supports >100 A continuous current with minimal heat, while the 40 V V_DS handles 24 V bus transients and the PG-LHDSO-10-3 surface-mount footprint integrates cleanly into PCB-based PDMs. Pair the MOSFET with a dedicated high-side gate driver and current-sense amplifier to build a fully protected, diagnostic-capable smart switch.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IAUCN04S7N006TATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LHDSO-10-3 | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) typical | 0.63 mΩ | 3.7 mΩ | 4.2 mΩ | 5 mΩ | 1.5 mΩ | 2.7 mΩ |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 |
| Automotive Grade | Yes | Yes | Yes | Yes | Yes | Yes |
| Parametric Tier (R_DS(on) class) | Lowest R_DS(on) | Mid R_DS(on) (~3.7 mΩ) | Mid-high R_DS(on) (~4.2 mΩ) | High R_DS(on) (~5 mΩ), lowest cost | Low R_DS(on) (~1.5 mΩ) | Mid R_DS(on) (~2.7 mΩ) |
أبرز الفروقات
- Lowest R_DS(on) in Infineon's OptiMOS 7 40 V PG-LHDSO-10-3 family (مقابلIAUCN04S7N037GATMA1)
- 40 V V_DS with automotive qualification in a surface-mount LSOP package (مقابلIAUCN04S7L050HATMA1)
- OptiMOS 7 generation vs older OptiMOS 5 family (مقابلBSC019N04LSTATMA1)
ملاحظات التصميم
Estimated: at 100 A continuous drain current, conduction loss is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, rising to about 27 W at 200 A. The PG-LHDSO-10-3 exposed thermal pad must be soldered to a copper pour of at least 25 × 25 mm with thermal vias to inner-layer copper; without adequate PCB cooling, the junction will exceed its rating at sustained high currents. Confirm junction temperature under worst-case ambient using the datasheet's thermal-resistance model (θ_JA on a standard JEDEC test board is the typical reference value).
Route the high-current drain and source traces on top copper layers directly into the exposed pad to minimize parasitic inductance. Use a Kelvin-source connection (separate gate-return trace tied to the source pad) to keep the gate-drive loop physically small, which reduces ringing during fast switching. Place the gate-driver within 5-10 mm of the gate pin to limit gate-loop inductance, and add a 10 Ω gate resistor plus a small ferrite bead to dampen overshoot on V_GS.
Do not exceed V_GS = ±20 V absolute maximum, even momentarily, as the gate oxide can be permanently damaged. Add a gate-source Zener or TVS clamp (typically 16-18 V) for additional protection in noisy automotive environments. Verify the in-system V_DS spike during turn-off stays below the 40 V rating by accounting for stray inductance: V_spike = L_stray × dI/dt, where dI/dt can exceed 1 kA/µs in fast-switching applications. Add a snubber or RCD clamp if measured transients approach the avalanche limit.
معلومات الامتثال
Part of Infineon's automotive MOSFET line per the 30-800 V automotive MOSFET product page. RoHS and lead-free per Infineon product family compliance statement.
