IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN04S7N006TATMA1 ✓ Hoạt độngIAUCN04S7N006TATMA1 Tóm tắt
What is an N-channel power MOSFET? An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch whose drain-source channel uses electron flow as the majority carrier. It belongs to the broader category of discrete power semiconductors, which sits inside power management and motor/motion conversion. The "40 V" rating defines the maximum drain-to-source blocking voltage the device can sustain when off, and a low R_DS(on) directly reduces conduction losses in high-current paths such as automotive 12 V/24 V systems.
Key features of the IAUCN04S7N006 include 0.63 mΩ typical R_DS(on) at V_GS = 10 V, automotive-grade qualification per Infineon's automotive MOSFET line, an exposed-lead package for low thermal resistance, and compatibility with logic-level gate drive when biased at 4.5 V V_GS. The PG-LHDSO-10-3 footprint is optimized for top-side cooling with a large solderable thermal pad.
The OptiMOS 7 cell architecture uses a shielded-gate trench design that simultaneously reduces gate charge (Q_G), output charge (Q_OSS), and reverse-recovery charge (Q_RR). Compared to previous OptiMOS generations, this delivers lower switching losses at high dV/dt, allowing higher PWM frequencies in motor drives without sacrificing efficiency.
Typical applications include 12 V and 24 V automotive BLDC motor drives (EPS, water pumps, oil pumps, fan control), high-current DC-DC converter high-side and low-side switches, battery protection in 12 V/24 V Li-ion packs, and industrial solenoid drivers. The very low R_DS(on) of 0.63 mΩ makes it well-suited to continuous high-current paths where conduction loss dominates thermal budget.
When designing with this part, keep the gate-drive loop compact and use Kelvin-source connection if the package exposes one. Estimate: at 100 A continuous, conduction loss alone is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, so the PCB copper pour and thermal via array must be sized accordingly.
This page synthesizes Infineon distributor pricing, drop-in alternatives, and practical design notes not all consolidated in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IAUCN04S7N006TATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUCN04S7N006TATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Mounting Type, Automotive Qualification, Technology, Product Family.
IAUCN04S7N037GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L042GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7L050HATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N015GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N027GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N019GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUCN04S7N006TATMA1 Tỷ lệ tối đa & tính chất điện
| Polarity | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, T_j) | 425 A |
| Power Dissipation (P_D, T_C) | 205 W |
| R_DS(on) (typ, V_GS=10V) | 0.63 mΩ |
| Technology | OptiMOS 7 (shielded-gate trench) |
| Hộp | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Kiểu lắp đặt | Surface Mount |
| Automotive Grade | Yes (Infineon automotive MOSFET line) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IAUCN04S7N006TATMA1
| Chân 1 | GATE — Gate drive input |
| Chân 2 | DRAIN — Drain terminal (high-current) |
| Chân 3 | DRAIN — Drain terminal (high-current) |
| Chân 4 | DRAIN — Drain terminal (high-current) |
| Chân 5 | DRAIN — Drain terminal (high-current) |
| Chân 6 | SOURCE — Source terminal |
| Chân 7 | SOURCE — Source terminal |
| Chân 8 | SOURCE — Source terminal |
| Chân 9 | NC — Not connected (per datasheet) |
| Chân 10 | NC — Not connected (per datasheet) |
| Chân PAD | DRAIN/SOURCE (exposed pad) — Exposed thermal pad - solder to PCB copper pour for cooling |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IAUCN04S7N006TATMA1 phù hợp cho 6 Áp dụngs: Automotive 12V/24V BLDC Motor Drive (EPS, Pumps, Fans), High-Current 12V/24V DC-DC Converter Power Stage, Battery Protection & Disconnect Switch, Industrial Solenoid & Relay Replacement, Hot-Swap & ORing Controller Power Switch, Power Distribution & Load Switch Module.
Automotive 12V/24V BLDC Motor Drive (EPS, Pumps, Fans)
The IAUCN04S7N006TATMA1 fits automotive BLDC inverter stages (electric power steering, water/oil pumps, radiator fans) because its 40 V V_DS rating covers the 24 V nominal bus plus ISO 7637-2 transient margin, while its 0.63 mΩ typical R_DS(on) keeps conduction loss below 6 W at 100 A continuous. The PG-LHDSO-10-3 exposed pad supports >200 W dissipation on a properly designed PCB copper pour. Placed in the inverter half-bridge switching at 20-50 kHz PWM, it adds lower switching loss than previous OptiMOS generations thanks to reduced Q_G and Q_OSS. Compared to a discrete IGBT solution, this MOSFET also enables higher PWM frequency and quieter acoustic signature.
Được đề xuất
High-Current 12V/24V DC-DC Converter Power Stage
In high-current buck or boost converter stages for 12 V/24 V automotive rails, the IAUCN04S7N006TATMA1 serves as the synchronous-rectifier or control switch. At 100 A load the 0.63 mΩ R_DS(on) translates to roughly 6.3 W conduction loss, leaving generous thermal margin in a 205 W rated package. The 40 V V_DS handles 24 V bus transients without avalanche, and the OptiMOS 7 shielded-gate trench gives low Q_OSS for reduced dead-time losses. Use the part in the synchronous-rectifier slot where the switch is on most of the time and conduction loss dominates efficiency.
Được đề xuất
Battery Protection & Disconnect Switch
The IAUCN04S7N006TATMA1 works well as a low-side or high-side disconnect switch in 12 V/24 V battery management systems, where its 0.63 mΩ R_DS(on) minimizes voltage drop and self-heating during normal operation. The 40 V V_DS is well above the 24 V load-dump envelope, and the automotive-grade qualification matches the BMS safety requirements. Place a fuse upstream and a TVS across the battery terminals for full ISO 7637-2 compliance; the MOSFET's high 425 A current rating provides ample margin for inrush and short-circuit transients until the fuse clears.
Được đề xuất
Industrial Solenoid & Relay Replacement
In industrial 24 V solenoid drivers replacing mechanical relays, the IAUCN04S7N006TATMA1 enables PWM current profiling (soft-start, hold-current reduction) that mechanical relays cannot provide. Its 0.63 mΩ R_DS(on) reduces I²R heating at the typical 2-5 A solenoid current to a few milliwatts per channel, and the 40 V V_DS handles 24 V flyback transients when paired with a freewheeling diode. The PG-LHDSO-10-3 surface-mount footprint supports high-density multi-channel driver boards where dozens of channels are integrated into a single PCB.
Được đề xuất
Hot-Swap & ORing Controller Power Switch
The IAUCN04S7N006TATMA1 can be used as the main pass element in a 12 V/24 V hot-swap or ORing controller, where its 0.63 mΩ R_DS(on) keeps the steady-state voltage drop under 70 mV at 100 A. During inrush, the gate-drive circuit ramps V_GS to limit dV/dt and dI/dt, and the 40 V V_DS rating provides robust avalanche margin if a short-circuit event occurs. Use the exposed-pad copper pour to spread the heat from momentary inrush currents (typically 5-20× steady state), and verify that the gate-driver can sink enough current to turn the part off quickly during fault events.
Được đề xuất
Power Distribution & Load Switch Module
The IAUCN04S7N006TATMA1 serves as a high-current load switch in zonal automotive power distribution modules, replacing fuses and mechanical relays with a software-controlled electronic switch. Its 0.63 mΩ R_DS(on) supports >100 A continuous current with minimal heat, while the 40 V V_DS handles 24 V bus transients and the PG-LHDSO-10-3 surface-mount footprint integrates cleanly into PCB-based PDMs. Pair the MOSFET with a dedicated high-side gate driver and current-sense amplifier to build a fully protected, diagnostic-capable smart switch.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUCN04S7N006TATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUCN04S7N037GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LHDSO-10-3 | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same | PG-LHDSO-10-3 - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| R_DS(on) typical | 0.63 mΩ | 3.7 mΩ | 4.2 mΩ | 5 mΩ | 1.5 mΩ | 2.7 mΩ |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 |
| Automotive Grade | Yes | Yes | Yes | Yes | Yes | Yes |
| Parametric Tier (R_DS(on) class) | Lowest R_DS(on) | Mid R_DS(on) (~3.7 mΩ) | Mid-high R_DS(on) (~4.2 mΩ) | High R_DS(on) (~5 mΩ), lowest cost | Low R_DS(on) (~1.5 mΩ) | Mid R_DS(on) (~2.7 mΩ) |
Bảo phân biệt quan trọng
- Lowest R_DS(on) in Infineon's OptiMOS 7 40 V PG-LHDSO-10-3 family (vsIAUCN04S7N037GATMA1)
- 40 V V_DS with automotive qualification in a surface-mount LSOP package (vsIAUCN04S7L050HATMA1)
- OptiMOS 7 generation vs older OptiMOS 5 family (vsBSC019N04LSTATMA1)
Ghi chú thiết kế
Estimated: at 100 A continuous drain current, conduction loss is approximately I²·R = 100² × 0.63 mΩ ≈ 6.3 W, rising to about 27 W at 200 A. The PG-LHDSO-10-3 exposed thermal pad must be soldered to a copper pour of at least 25 × 25 mm with thermal vias to inner-layer copper; without adequate PCB cooling, the junction will exceed its rating at sustained high currents. Confirm junction temperature under worst-case ambient using the datasheet's thermal-resistance model (θ_JA on a standard JEDEC test board is the typical reference value).
Route the high-current drain and source traces on top copper layers directly into the exposed pad to minimize parasitic inductance. Use a Kelvin-source connection (separate gate-return trace tied to the source pad) to keep the gate-drive loop physically small, which reduces ringing during fast switching. Place the gate-driver within 5-10 mm of the gate pin to limit gate-loop inductance, and add a 10 Ω gate resistor plus a small ferrite bead to dampen overshoot on V_GS.
Do not exceed V_GS = ±20 V absolute maximum, even momentarily, as the gate oxide can be permanently damaged. Add a gate-source Zener or TVS clamp (typically 16-18 V) for additional protection in noisy automotive environments. Verify the in-system V_DS spike during turn-off stays below the 40 V rating by accounting for stray inductance: V_spike = L_stray × dI/dt, where dI/dt can exceed 1 kA/µs in fast-switching applications. Add a snubber or RCD clamp if measured transients approach the avalanche limit.
Thông tin tuân thủ
Part of Infineon's automotive MOSFET line per the 30-800 V automotive MOSFET product page. RoHS and lead-free per Infineon product family compliance statement.
