ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
MPN: ISC046N13NM6ATMA1 ✓ نشطISC046N13NM6ATMA1 نظرة عامة
A power MOSFET is a voltage-controlled semiconductor switch that uses an isolated gate electrode to modulate current flow between the drain and source terminals. N-channel MOSFETs conduct when the gate is pulled above the source by the threshold voltage, and they form the building blocks of DC-DC converters, motor drives, synchronous rectifiers, and hot-swap controllers. The OptiMOS 6 family (a successor to OptiMOS 5) improves key switching-loss figures such as reverse-recovery charge (Qrr) and peak reverse-recovery current (Irm) - Infineon quotes 70 percent lower Qrr and 45 percent lower Irm versus prior generations, reducing switching losses and EMI in hard-switched topologies.
Key headline parameters include a 135 V VDS rating, 17 A continuous ID at 25 C ambient, 142 A pulsed ID at TC, and 3 W / 211 W power dissipation limits. The PG-TDSON-8 (also called TDSON-8) package exposes a drain tab that serves as both electrical drain and primary thermal path. The MOSFET is qualified for industrial-grade temperatures (typically -55 C to +175 C operating range based on the LCSC listing).
Typical applications include motor drives, uninterruptible power supplies (UPS), telecom DC-DC converters, solar inverters, and synchronous rectification in switched-mode power supplies. The 135 V rating leaves comfortable headroom above 100 V telecom bus rails (e.g., 48-72 V rectified) while staying below the 150 V secondary-rectifier sweet spot.
Designers should pay attention to gate-drive voltage: OptiMOS 6 parts in this class typically specify a 10 V gate drive for full Rds(on) specification, with a logic-level threshold around 1.0-2.5 V. Layout must keep the high-di/dt power loop area minimal to control switching transients and ringing.
This page consolidates Infineon datasheet parameters, distributor pricing, and pin-to-pin alternative options in the PG-TDSON-8 footprint to support sourcing and second-source decisions for motor-drive and UPS designs.
بدائل مباشرة لـ ISC046N13NM6ATMA1 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع ISC046N13NM6ATMA1 (نفس عامل الشكل والبصمة) — يختلف في Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at Ta, Continuous Drain Current (ID) at Tc.
ISC060N10NM6ATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC080N10NM6ATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC0802NLSATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC0703NLSATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC015N04NM5ATMA1
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←ISC046N13NM6ATMA1 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 |
| نوع الترانزستور | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V |
| Continuous Drain Current (ID) at TA | 17 A |
| Continuous Drain Current (ID) at TC | 142 A |
| Power Dissipation (PD) at TA | 3 W |
| Power Dissipation (PD) at TC | 211 W |
| العلبة / الحالة | PG-TDSON-8 |
| نوع التركيب | Surface Mount |
| نطاق درجة حرارة التشغيل | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET |
| Gate Drive (recommended) | 10 V (typical) |
| حالة RoHS | Compliant |
| Packaging | Tape & Reel |
تكوين أطراف ISC046N13NM6ATMA1
| دبوس 1 | Source — Source terminal (connected to PCB source plane) |
| دبوس 2 | Source — Source terminal |
| دبوس 3 | Source — Source terminal |
| دبوس 4 | Gate — Gate drive input |
| دبوس 5 | Source — Source terminal |
| دبوس 6 | Source — Source terminal |
| دبوس 7 | Source — Source terminal |
| دبوس 8 | Drain — Drain terminal (connected to exposed tab) |
منطقة التشغيل الآمن - ISC046N13NM6ATMA1
التطبيقات النموذجية
ISC046N13NM6ATMA1 مناسب لـ 6 التطبيقs: Motor Drive (BLDC / PMSM), Uninterruptible Power Supply (UPS), Telecom DC-DC Converter, Solar Inverter / MPPT Stage, Synchronous Rectification, Hot-Swap / Inrush Control.
Motor Drive (BLDC / PMSM)
The ISC046N13NM6ATMA1 is well-suited for the inverter stage of BLDC and PMSM motor drives operating from 48-72 V bus rails. Its 135 V VDS rating provides margin above 72 V rectified peaks, while the 70 percent lower Qrr claimed by Infineon for OptiMOS 6 reduces switching losses and diode reverse-recovery stress on the complementary high-side switch. The PG-TDSON-8 package supports the high di/dt loops typical of 20-50 kHz PWM switching. Estimated: at 50 kHz with 30 A load and 80 V bus, switching losses in a hard-switched half-bridge leg typically fall below 5 W per switch thanks to OptiMOS 6 figures of merit, allowing compact air-cooled designs without a fan.
موصى به
Uninterruptible Power Supply (UPS)
In online UPS architectures, the ISC046N13NM6ATMA1 functions as the primary switching element in the PFC boost stage or as the synchronous rectifier on the DC-DC conversion stage feeding the battery bus. The 135 V rating accommodates 120 V rectified mains with adequate derating, and the 142 A pulsed current capability handles inrush events during load step transients. Infineon's 45 percent lower Irm claim versus prior generations directly benefits hard-switched PFC designs where reverse-recovery losses dominate at high line. Designers should size the heatsink for at least 50 percent of the 211 W TC dissipation rating at peak load.
موصى به
Telecom DC-DC Converter
The ISC046N13NM6ATMA1 targets 48 V nominal telecom bus applications where 80 V transients must be tolerated. Used as the primary-side switch in a half-bridge or full-bridge topology feeding an isolated DC-DC brick, the part delivers 17 A continuous at 25 C ambient - sufficient for 600-800 W brick converters. The OptiMOS 6 technology's low Qrr reduces transformer ringing and improves EMI margins in CISPR 22 Class A compliant designs. Estimated: at 100 kHz switching frequency with 60 V bus and 15 A load, conduction losses at full Rds(on) are typically 8-12 W per switch.
موصى به
Solar Inverter / MPPT Stage
For grid-tied solar string inverters with 60-80 VDC maximum input, the ISC046N13NM6ATMA1's 135 V rating gives 1.7x safety margin against transient overvoltages. The MOSFET serves as the main switch in the MPPT boost converter or as the synchronous rectifier in the following DC-DC stage. The PG-TDSON-8 package's exposed drain tab enables direct PCB copper heatsinking without an external heatsink for sub-100 W converter designs. The OptiMOS 6 low Qrr advantage also reduces circulating current losses during CCM operation at high duty cycles.
موصى به
Synchronous Rectification
The ISC046N13NM6ATMA1 serves as a synchronous rectifier on the secondary side of forward or half-bridge converters where its low on-resistance (typical for OptiMOS 6 at this die size) outperforms Schottky diodes above 5-10 A load current. The 135 V rating suits rectified 80-100 V secondary windings with margin. Synchronous rectification typically yields 1-3 percent efficiency improvement over Schottky diodes at full load, with the additional benefit of reduced thermal dissipation. The 17 A continuous rating handles 200-300 W brick converters without paralleling devices.
موصى به
Hot-Swap / Inrush Control
In 48-72 V telecom hot-swap controllers, the ISC046N13NM6ATMA1 functions as the main pass element controlling inrush current during board insertion. Its 142 A pulsed rating absorbs the capacitive charge current of large bulk capacitors, while the 135 V VDS withstands transient spikes during hot-plug events. Infineon's low Qrr figures help reduce ringing on the backplane during load steps. Design tip: a 10 V gate drive with a controlled dV/dt via gate resistor (typically 10-100 ohm) optimizes the trade-off between inrush time and thermal stress during repeated hot-plug events.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ ISC046N13NM6ATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | ISC060N10NM6ATMA1 | ISC080N10NM6ATMA1 | ISC0802NLSATMA1 | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 135 V | 100 V (-26%) | 100 V (-26%) | 80 V (-41%) | 75 V (-44%) | 40 V (-70%) |
| Technology Family | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS | OptiMOS | OptiMOS 5 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
أبرز الفروقات
- Highest voltage rating in the OptiMOS 6 PG-TDSON-8 class (مقابلISC060N10NM6ATMA1)
- OptiMOS 6 technology with 70% lower Qrr (مقابلISC015N04NM5ATMA1)
- Same PG-TDSON-8 footprint enables second-source flexibility (مقابلIRFB4310PBF)
ملاحظات التصميم
PCB layout for the ISC046N13NM6ATMA1 should minimize the high-di/dt power loop area between drain, source, and the gate-driver IC. Place the gate-drive bypass capacitor (typically 1 uF ceramic + 100 nF) within 5 mm of the gate pin to limit ringing. The exposed drain tab (pin 8) must be soldered to a continuous copper pour on the top layer, ideally with thermal vias to inner layers to spread heat. Estimated: with a 25x25 mm copper pour on a 1 oz FR-4 board, the package achieves approximately 40-50 C/W theta_JA - derate accordingly when designing continuous-current budgets.
At TA continuous rating (17 A into FR-4 PCB at 25 C ambient), the ISC046N13NM6ATMA1 dissipates 3 W - adequate for a 25x25 mm copper pour. For pulsed loads, refer to the transient thermal impedance curve (ZthJC) in the Infineon datasheet; typical 1 ms pulses allow 5-10x current multiplication before thermal limits are reached. The maximum junction temperature is 175 C, but Infineon recommends operating below 150 C junction for extended reliability. Estimated: at 100 W dissipation and 50 C/W theta_JA, junction temperature rises 100 C above ambient.
Do not exceed the 135 V VDS absolute maximum rating; transient ringing from inductive parasitics can easily exceed 150 V if snubbers are inadequate. Always use a 10 V gate drive (not 4.5 V logic-level drive) to achieve the datasheet-specified Rds(on). The OptiMOS 6 gate threshold is in the 1.5-2.5 V range - a 3.3 V logic signal may partially enhance the device. Place a gate-source resistor (10-100 kohm) to prevent floating-gate turn-on during high dV/dt events. Estimated input capacitance at VGS=0 is typically 2-4 nF for this die class.
For half-bridge configurations, the ISC046N13NM6ATMA1 should be placed with its source pin adjacent to the low-side switch's drain pin to minimize the high-side loop inductance. Use kelvin-source connection if available - the gate-drive return should connect to the source pad near pin 4 (gate), not at the power ground plane. This prevents source-inductance-induced gate-drive oscillations that can overstress the gate oxide at high switching frequencies above 100 kHz.
معلومات الامتثال
RoHS compliant per Infineon product page and DigiKey listing. AEC-Q100 not applicable for industrial-grade parts; automotive-qualified variants may exist separately.
