ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
部品番号: ISC046N13NM6ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.96 | $19.60 |
| 100 | $1.72 | $172.00 |
| 500 | $1.49 | $745.00 |
| 1,000 | $1.31 | $1,310.00 |
| 5,000 | $1.08 | $5,400.00 |
ISC046N13NM6ATMA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that uses an isolated gate electrode to modulate current flow between the drain and source terminals. N-channel MOSFETs conduct when the gate is pulled above the source by the threshold voltage, and they form the building blocks of DC-DC converters, motor drives, synchronous rectifiers, and hot-swap controllers. The OptiMOS 6 family (a successor to OptiMOS 5) improves key switching-loss figures such as reverse-recovery charge (Qrr) and peak reverse-recovery current (Irm) - Infineon quotes 70 percent lower Qrr and 45 percent lower Irm versus prior generations, reducing switching losses and EMI in hard-switched topologies.
Key headline parameters include a 135 V VDS rating, 17 A continuous ID at 25 C ambient, 142 A pulsed ID at TC, and 3 W / 211 W power dissipation limits. The PG-TDSON-8 (also called TDSON-8) package exposes a drain tab that serves as both electrical drain and primary thermal path. The MOSFET is qualified for industrial-grade temperatures (typically -55 C to +175 C operating range based on the LCSC listing).
Typical applications include motor drives, uninterruptible power supplies (UPS), telecom DC-DC converters, solar inverters, and synchronous rectification in switched-mode power supplies. The 135 V rating leaves comfortable headroom above 100 V telecom bus rails (e.g., 48-72 V rectified) while staying below the 150 V secondary-rectifier sweet spot.
Designers should pay attention to gate-drive voltage: OptiMOS 6 parts in this class typically specify a 10 V gate drive for full Rds(on) specification, with a logic-level threshold around 1.0-2.5 V. Layout must keep the high-di/dt power loop area minimal to control switching transients and ringing.
This page consolidates Infineon datasheet parameters, distributor pricing, and pin-to-pin alternative options in the PG-TDSON-8 footprint to support sourcing and second-source decisions for motor-drive and UPS designs.
ドロップイン代替品: ISC046N13NM6ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ISC046N13NM6ATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at Ta, Continuous Drain Current (ID) at Tc.
クイック比較ツール — 並列比較する代替部品を選択:
ISC060N10NM6ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.43 / 個
データシートを見る →ISC080N10NM6ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.05 / 個
データシートを見る →ISC0802NLSATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.8 / 個
データシートを見る →ISC0703NLSATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.51 / 個
データシートを見る →ISC015N04NM5ATMA1
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.98 / 個
データシートを見る →ISC046N13NM6ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 135 V |
| Continuous Drain Current (ID) at TA | 17 A |
| Continuous Drain Current (ID) at TC | 142 A |
| Power Dissipation (PD) at TA | 3 W |
| Power Dissipation (PD) at TC | 211 W |
| パッケージ / ケース | PG-TDSON-8 |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55 C to +175 C |
| Technology | OptiMOS 6 trench MOSFET |
| Gate Drive (recommended) | 10 V (typical) |
| RoHS ステータス | Compliant |
| Packaging | Tape & Reel |
ISC046N13NM6ATMA1 ピン構成
| ピン 1 | Source — Source terminal (connected to PCB source plane) |
| ピン 2 | Source — Source terminal |
| ピン 3 | Source — Source terminal |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Source — Source terminal |
| ピン 6 | Source — Source terminal |
| ピン 7 | Source — Source terminal |
| ピン 8 | Drain — Drain terminal (connected to exposed tab) |
安全動作領域 - ISC046N13NM6ATMA1
主な用途
ISC046N13NM6ATMA1 の用途: 6 件s: Motor Drive (BLDC / PMSM), Uninterruptible Power Supply (UPS), Telecom DC-DC Converter, Solar Inverter / MPPT Stage, Synchronous Rectification, Hot-Swap / Inrush Control.
Motor Drive (BLDC / PMSM)
The ISC046N13NM6ATMA1 is well-suited for the inverter stage of BLDC and PMSM motor drives operating from 48-72 V bus rails. Its 135 V VDS rating provides margin above 72 V rectified peaks, while the 70 percent lower Qrr claimed by Infineon for OptiMOS 6 reduces switching losses and diode reverse-recovery stress on the complementary high-side switch. The PG-TDSON-8 package supports the high di/dt loops typical of 20-50 kHz PWM switching. Estimated: at 50 kHz with 30 A load and 80 V bus, switching losses in a hard-switched half-bridge leg typically fall below 5 W per switch thanks to OptiMOS 6 figures of merit, allowing compact air-cooled designs without a fan.
おすすめ
Uninterruptible Power Supply (UPS)
In online UPS architectures, the ISC046N13NM6ATMA1 functions as the primary switching element in the PFC boost stage or as the synchronous rectifier on the DC-DC conversion stage feeding the battery bus. The 135 V rating accommodates 120 V rectified mains with adequate derating, and the 142 A pulsed current capability handles inrush events during load step transients. Infineon's 45 percent lower Irm claim versus prior generations directly benefits hard-switched PFC designs where reverse-recovery losses dominate at high line. Designers should size the heatsink for at least 50 percent of the 211 W TC dissipation rating at peak load.
おすすめ
Telecom DC-DC Converter
The ISC046N13NM6ATMA1 targets 48 V nominal telecom bus applications where 80 V transients must be tolerated. Used as the primary-side switch in a half-bridge or full-bridge topology feeding an isolated DC-DC brick, the part delivers 17 A continuous at 25 C ambient - sufficient for 600-800 W brick converters. The OptiMOS 6 technology's low Qrr reduces transformer ringing and improves EMI margins in CISPR 22 Class A compliant designs. Estimated: at 100 kHz switching frequency with 60 V bus and 15 A load, conduction losses at full Rds(on) are typically 8-12 W per switch.
おすすめ
Solar Inverter / MPPT Stage
For grid-tied solar string inverters with 60-80 VDC maximum input, the ISC046N13NM6ATMA1's 135 V rating gives 1.7x safety margin against transient overvoltages. The MOSFET serves as the main switch in the MPPT boost converter or as the synchronous rectifier in the following DC-DC stage. The PG-TDSON-8 package's exposed drain tab enables direct PCB copper heatsinking without an external heatsink for sub-100 W converter designs. The OptiMOS 6 low Qrr advantage also reduces circulating current losses during CCM operation at high duty cycles.
おすすめ
Synchronous Rectification
The ISC046N13NM6ATMA1 serves as a synchronous rectifier on the secondary side of forward or half-bridge converters where its low on-resistance (typical for OptiMOS 6 at this die size) outperforms Schottky diodes above 5-10 A load current. The 135 V rating suits rectified 80-100 V secondary windings with margin. Synchronous rectification typically yields 1-3 percent efficiency improvement over Schottky diodes at full load, with the additional benefit of reduced thermal dissipation. The 17 A continuous rating handles 200-300 W brick converters without paralleling devices.
おすすめ
Hot-Swap / Inrush Control
In 48-72 V telecom hot-swap controllers, the ISC046N13NM6ATMA1 functions as the main pass element controlling inrush current during board insertion. Its 142 A pulsed rating absorbs the capacitive charge current of large bulk capacitors, while the 135 V VDS withstands transient spikes during hot-plug events. Infineon's low Qrr figures help reduce ringing on the backplane during load steps. Design tip: a 10 V gate drive with a controlled dV/dt via gate resistor (typically 10-100 ohm) optimizes the trade-off between inrush time and thermal stress during repeated hot-plug events.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISC046N13NM6ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ISC060N10NM6ATMA1 | ISC080N10NM6ATMA1 | ISC0802NLSATMA1 | ISC0703NLSATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 135 V | 100 V (-26%) | 100 V (-26%) | 80 V (-41%) | 75 V (-44%) | 40 V (-70%) |
| Technology Family | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS | OptiMOS | OptiMOS 5 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
主な差別化要因
- Highest voltage rating in the OptiMOS 6 PG-TDSON-8 class （vs ISC060N10NM6ATMA1)
- OptiMOS 6 technology with 70% lower Qrr （vs ISC015N04NM5ATMA1)
- Same PG-TDSON-8 footprint enables second-source flexibility （vs IRFB4310PBF)
設計ノート
PCB layout for the ISC046N13NM6ATMA1 should minimize the high-di/dt power loop area between drain, source, and the gate-driver IC. Place the gate-drive bypass capacitor (typically 1 uF ceramic + 100 nF) within 5 mm of the gate pin to limit ringing. The exposed drain tab (pin 8) must be soldered to a continuous copper pour on the top layer, ideally with thermal vias to inner layers to spread heat. Estimated: with a 25x25 mm copper pour on a 1 oz FR-4 board, the package achieves approximately 40-50 C/W theta_JA - derate accordingly when designing continuous-current budgets.
At TA continuous rating (17 A into FR-4 PCB at 25 C ambient), the ISC046N13NM6ATMA1 dissipates 3 W - adequate for a 25x25 mm copper pour. For pulsed loads, refer to the transient thermal impedance curve (ZthJC) in the Infineon datasheet; typical 1 ms pulses allow 5-10x current multiplication before thermal limits are reached. The maximum junction temperature is 175 C, but Infineon recommends operating below 150 C junction for extended reliability. Estimated: at 100 W dissipation and 50 C/W theta_JA, junction temperature rises 100 C above ambient.
Do not exceed the 135 V VDS absolute maximum rating; transient ringing from inductive parasitics can easily exceed 150 V if snubbers are inadequate. Always use a 10 V gate drive (not 4.5 V logic-level drive) to achieve the datasheet-specified Rds(on). The OptiMOS 6 gate threshold is in the 1.5-2.5 V range - a 3.3 V logic signal may partially enhance the device. Place a gate-source resistor (10-100 kohm) to prevent floating-gate turn-on during high dV/dt events. Estimated input capacitance at VGS=0 is typically 2-4 nF for this die class.
For half-bridge configurations, the ISC046N13NM6ATMA1 should be placed with its source pin adjacent to the low-side switch's drain pin to minimize the high-side loop inductance. Use kelvin-source connection if available - the gate-drive return should connect to the source pad near pin 4 (gate), not at the power ground plane. This prevents source-inductance-induced gate-drive oscillations that can overstress the gate oxide at high switching frequencies above 100 kHz.
コンプライアンス情報
RoHS compliant per Infineon product page and DigiKey listing. AEC-Q100 not applicable for industrial-grade parts; automotive-qualified variants may exist separately.
