NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
MPN: NT5CC256M16DP-DIH ✓ نشطNT5CC256M16DP-DIH نظرة عامة
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for industrial temperature range (0°C to +95°C). The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination for improved signal integrity. The 96-ball VFBGA package provides a compact footprint suitable for space-constrained designs.
The NT5CC256M16DP-DIH utilizes advanced CMOS process technology, achieving high-speed operation with low power dissipation. It incorporates a temperature-compensated self-refresh mechanism to maintain data integrity across temperature variations. The device also features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing control.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive applications requiring large memory capacity.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
بدائل مباشرة لـ NT5CC256M16DP-DIH — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع NT5CC256M16DP-DIH (نفس عامل الشكل والبصمة) — يختلف في Package, Supply Voltage, CAS Latency, Data Rate, Density.
NT5CC256M16DP-DII
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16DP-DI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16HA-125
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMA
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منهاتواصل لمعرفة السعر
عرض ورقة البيانات ←IS43TR16512B-125KBLI
✅ بديل مباشر ⚠️ مواصفات غير مُتحقق منها📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CC256M16DP-DIH الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| Density | 4 Gbit |
| التنظيم | 256M x 16 |
| جهد التغذية | 1.35 V |
| معدل البيانات | 1600 Mbps (DDR3-1600) |
| العلبة | 96-ball VFBGA |
| نطاق درجة حرارة التشغيل | 0°C to +95°C |
| زمن الوصول CAS | 11 (typical) |
| Burst Length | 8, 4 |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
تكوين أطراف NT5CC256M16DP-DIH
| دبوس A1 | VDD — Power supply |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس B1 | DQ2 — Data input/output 2 |
| دبوس B2 | DQ3 — Data input/output 3 |
| دبوس B3 | VDD — Power supply |
| دبوس B4 | DQ4 — Data input/output 4 |
| دبوس C1 | DQ5 — Data input/output 5 |
| دبوس C2 | VSS — Ground |
| دبوس C3 | DQ6 — Data input/output 6 |
| دبوس C4 | DQ7 — Data input/output 7 |
| دبوس D1 | VDD — Power supply |
| دبوس D2 | DQ8 — Data input/output 8 |
| دبوس D3 | DQ9 — Data input/output 9 |
| دبوس D4 | VSS — Ground |
التطبيقات النموذجية
NT5CC256M16DP-DIH مناسب لـ 6 التطبيقs: Laptop Memory Modules, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers.
Laptop Memory Modules
The NT5CC256M16DP-DIH is used in DDR3L SO-DIMM modules for laptops, providing 4Gb capacity at 1.35V. Its low voltage reduces power consumption, extending battery life. The 256Mx16 organization allows for easy module design with 16 chips for 8GB modules. The industrial temperature range ensures reliability in various environments.
موصى به
Networking Equipment
In routers and switches, the NT5CC256M16DP-DIH provides high-speed packet buffering with 1600 Mbps data rate. Its low power consumption is critical for 24/7 operation. The auto self-refresh feature maintains data integrity during idle periods, reducing power draw. The 96-ball VFBGA package fits compact line cards.
موصى به
Industrial PCs
The NT5CC256M16DP-DIH is ideal for industrial PCs requiring reliable operation in harsh environments. Its 0°C to +95°C temperature range and robust design ensure long-term stability. The 1.35V operation reduces heat generation, improving system reliability. The 4Gb density supports demanding industrial applications.
موصى به
Automotive Infotainment
The NT5CC256M16DP-DIH is suitable for automotive infotainment systems, providing high bandwidth for multimedia processing. Its industrial temperature range meets automotive requirements. The low voltage reduces power consumption, important for vehicle electrical systems. The device supports write leveling for reliable high-speed operation.
موصى به
Embedded Systems
In embedded systems, the NT5CC256M16DP-DIH offers a balance of capacity and power efficiency. Its 4Gb density is sufficient for many applications, while 1.35V operation minimizes power draw. The 96-ball VFBGA package is suitable for compact designs. The device's features like auto precharge simplify memory controller design.
موصى به
Servers
The NT5CC256M16DP-DIH can be used in entry-level servers for memory-intensive tasks. Its 1600 Mbps data rate provides adequate bandwidth for server workloads. The low voltage reduces power consumption in data centers. The device's reliability features ensure stable operation in 24/7 environments.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ NT5CC256M16DP-DIH — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | NT5CC256M16DP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball VFBGA | 96-ball VFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
أبرز الفروقات
- Industrial temperature range (مقابلMT41K256M16HA-125)
- Low voltage operation (مقابلK4B4G1646E-BYMA)
- Availability and cost (مقابلIS43TR16512B-125KBLI)
ملاحظات التصميم
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane to minimize noise. Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity, especially for high-speed data lines.
The NT5CC256M16DP-DIH operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball VFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Monitor junction temperature to avoid exceeding the maximum rating.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors (22-33 ohms) near the driver. Ensure the ZQ pin has a 240-ohm resistor to ground for calibration.
معلومات الامتثال
RoHS compliance indicated by Nanya datasheet. AEC-Q100 not applicable for DRAM.
