NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
부품 번호: NT5CC256M16DP-DIH ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $29.81 | $29.81 |
| 10 | $27.5 | $275.00 |
| 100 | $25 | $2,500.00 |
| 500 | $22 | $11,000.00 |
| 1,000 | $20 | $20,000.00 |
NT5CC256M16DP-DIH 개요
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for industrial temperature range (0°C to +95°C). The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination for improved signal integrity. The 96-ball VFBGA package provides a compact footprint suitable for space-constrained designs.
The NT5CC256M16DP-DIH utilizes advanced CMOS process technology, achieving high-speed operation with low power dissipation. It incorporates a temperature-compensated self-refresh mechanism to maintain data integrity across temperature variations. The device also features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing control.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive applications requiring large memory capacity.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
드롭인 대체품: NT5CC256M16DP-DIH — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: NT5CC256M16DP-DIH (동일 폼 팩터 및 풋프린트) — 차이점: Package, Supply Voltage, CAS Latency, Data Rate, Density.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
NT5CC256M16DP-DII
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NT5CC256M16DP-DI
✅ 드롭인✓ 재고 있음
$6.5 / 개
데이터시트 보기 →MT41K256M16HA-125
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.3636 / 개
데이터시트 보기 →K4B4G1646E-BYMA
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$14.3182 / 개
데이터시트 보기 →IS43TR16512B-125KBLI
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
NT5CC256M16DP-DIH 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| Density | 4 Gbit |
| 메모리 구성 | 256M x 16 |
| 공급 전압 | 1.35 V |
| 데이터 속도 | 1600 Mbps (DDR3-1600) |
| 패키지 | 96-ball VFBGA |
| 동작 온도 범위 | 0°C to +95°C |
| CAS 레이턴시 | 11 (typical) |
| Burst Length | 8, 4 |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
NT5CC256M16DP-DIH 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 B1 | DQ2 — Data input/output 2 |
| 핀 B2 | DQ3 — Data input/output 3 |
| 핀 B3 | VDD — Power supply |
| 핀 B4 | DQ4 — Data input/output 4 |
| 핀 C1 | DQ5 — Data input/output 5 |
| 핀 C2 | VSS — Ground |
| 핀 C3 | DQ6 — Data input/output 6 |
| 핀 C4 | DQ7 — Data input/output 7 |
| 핀 D1 | VDD — Power supply |
| 핀 D2 | DQ8 — Data input/output 8 |
| 핀 D3 | DQ9 — Data input/output 9 |
| 핀 D4 | VSS — Ground |
일반적인 애플리케이션
NT5CC256M16DP-DIH 적합 용도: 6 애플리케이션s: Laptop Memory Modules, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers.
Laptop Memory Modules
The NT5CC256M16DP-DIH is used in DDR3L SO-DIMM modules for laptops, providing 4Gb capacity at 1.35V. Its low voltage reduces power consumption, extending battery life. The 256Mx16 organization allows for easy module design with 16 chips for 8GB modules. The industrial temperature range ensures reliability in various environments.
추천
Networking Equipment
In routers and switches, the NT5CC256M16DP-DIH provides high-speed packet buffering with 1600 Mbps data rate. Its low power consumption is critical for 24/7 operation. The auto self-refresh feature maintains data integrity during idle periods, reducing power draw. The 96-ball VFBGA package fits compact line cards.
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Industrial PCs
The NT5CC256M16DP-DIH is ideal for industrial PCs requiring reliable operation in harsh environments. Its 0°C to +95°C temperature range and robust design ensure long-term stability. The 1.35V operation reduces heat generation, improving system reliability. The 4Gb density supports demanding industrial applications.
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Automotive Infotainment
The NT5CC256M16DP-DIH is suitable for automotive infotainment systems, providing high bandwidth for multimedia processing. Its industrial temperature range meets automotive requirements. The low voltage reduces power consumption, important for vehicle electrical systems. The device supports write leveling for reliable high-speed operation.
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Embedded Systems
In embedded systems, the NT5CC256M16DP-DIH offers a balance of capacity and power efficiency. Its 4Gb density is sufficient for many applications, while 1.35V operation minimizes power draw. The 96-ball VFBGA package is suitable for compact designs. The device's features like auto precharge simplify memory controller design.
추천
Servers
The NT5CC256M16DP-DIH can be used in entry-level servers for memory-intensive tasks. Its 1600 Mbps data rate provides adequate bandwidth for server workloads. The low voltage reduces power consumption in data centers. The device's reliability features ensure stable operation in 24/7 environments.
추천
추천 제품 요약
엔지니어링 참조 데이터: NT5CC256M16DP-DIH — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | NT5CC256M16DP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball VFBGA | 96-ball VFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
주요 차별점
- Industrial temperature range (vs MT41K256M16HA-125)
- Low voltage operation (vs K4B4G1646E-BYMA)
- Availability and cost (vs IS43TR16512B-125KBLI)
설계 노트
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane to minimize noise. Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity, especially for high-speed data lines.
The NT5CC256M16DP-DIH operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball VFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Monitor junction temperature to avoid exceeding the maximum rating.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors (22-33 ohms) near the driver. Ensure the ZQ pin has a 240-ohm resistor to ground for calibration.
규정 준수 정보
RoHS compliance indicated by Nanya datasheet. AEC-Q100 not applicable for DRAM.
