NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
N.º da peça: NT5CC256M16DP-DIH ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $29.81 | $29,81 |
| 10 | $27.5 | $275,00 |
| 100 | $25 | $2.500,00 |
| 500 | $22 | $11.000,00 |
| 1.000 | $20 | $20.000,00 |
NT5CC256M16DP-DIH Visão geral
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for industrial temperature range (0°C to +95°C). The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination for improved signal integrity. The 96-ball VFBGA package provides a compact footprint suitable for space-constrained designs.
The NT5CC256M16DP-DIH utilizes advanced CMOS process technology, achieving high-speed operation with low power dissipation. It incorporates a temperature-compensated self-refresh mechanism to maintain data integrity across temperature variations. The device also features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing control.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive applications requiring large memory capacity.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternativas drop-in para NT5CC256M16DP-DIH — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com NT5CC256M16DP-DIH (mesmo formato e footprint) — diferindo em Package, Supply Voltage, CAS Latency, Data Rate, Density.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
NT5CC256M16DP-DII
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NT5CC256M16DP-DI
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →K4B4G1646E-BYMA
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →IS43TR16512B-125KBLI
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
NT5CC256M16DP-DIH Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gbit |
| Organização da memória | 256M x 16 |
| Tensão de alimentação | 1.35 V |
| Taxa de dados | 1600 Mbps (DDR3-1600) |
| Encapsulamento | 96-ball VFBGA |
| Faixa de temperatura de operação | 0°C to +95°C |
| Latência CAS | 11 (typical) |
| Burst Length | 8, 4 |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
Configuração de pinos do NT5CC256M16DP-DIH
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino B1 | DQ2 — Data input/output 2 |
| Pino B2 | DQ3 — Data input/output 3 |
| Pino B3 | VDD — Power supply |
| Pino B4 | DQ4 — Data input/output 4 |
| Pino C1 | DQ5 — Data input/output 5 |
| Pino C2 | VSS — Ground |
| Pino C3 | DQ6 — Data input/output 6 |
| Pino C4 | DQ7 — Data input/output 7 |
| Pino D1 | VDD — Power supply |
| Pino D2 | DQ8 — Data input/output 8 |
| Pino D3 | DQ9 — Data input/output 9 |
| Pino D4 | VSS — Ground |
Aplicações típicas
NT5CC256M16DP-DIH é adequado para 6 aplicaçãos: Laptop Memory Modules, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers.
Laptop Memory Modules
The NT5CC256M16DP-DIH is used in DDR3L SO-DIMM modules for laptops, providing 4Gb capacity at 1.35V. Its low voltage reduces power consumption, extending battery life. The 256Mx16 organization allows for easy module design with 16 chips for 8GB modules. The industrial temperature range ensures reliability in various environments.
Recomendado
Networking Equipment
In routers and switches, the NT5CC256M16DP-DIH provides high-speed packet buffering with 1600 Mbps data rate. Its low power consumption is critical for 24/7 operation. The auto self-refresh feature maintains data integrity during idle periods, reducing power draw. The 96-ball VFBGA package fits compact line cards.
Recomendado
Industrial PCs
The NT5CC256M16DP-DIH is ideal for industrial PCs requiring reliable operation in harsh environments. Its 0°C to +95°C temperature range and robust design ensure long-term stability. The 1.35V operation reduces heat generation, improving system reliability. The 4Gb density supports demanding industrial applications.
Recomendado
Automotive Infotainment
The NT5CC256M16DP-DIH is suitable for automotive infotainment systems, providing high bandwidth for multimedia processing. Its industrial temperature range meets automotive requirements. The low voltage reduces power consumption, important for vehicle electrical systems. The device supports write leveling for reliable high-speed operation.
Recomendado
Embedded Systems
In embedded systems, the NT5CC256M16DP-DIH offers a balance of capacity and power efficiency. Its 4Gb density is sufficient for many applications, while 1.35V operation minimizes power draw. The 96-ball VFBGA package is suitable for compact designs. The device's features like auto precharge simplify memory controller design.
Recomendado
Servers
The NT5CC256M16DP-DIH can be used in entry-level servers for memory-intensive tasks. Its 1600 Mbps data rate provides adequate bandwidth for server workloads. The low voltage reduces power consumption in data centers. The device's reliability features ensure stable operation in 24/7 environments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para NT5CC256M16DP-DIH — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | NT5CC256M16DP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball VFBGA | 96-ball VFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principais diferenciais
- Industrial temperature range (vs MT41K256M16HA-125)
- Low voltage operation (vs K4B4G1646E-BYMA)
- Availability and cost (vs IS43TR16512B-125KBLI)
Notas de projeto
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane to minimize noise. Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity, especially for high-speed data lines.
The NT5CC256M16DP-DIH operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball VFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Monitor junction temperature to avoid exceeding the maximum rating.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors (22-33 ohms) near the driver. Ensure the ZQ pin has a 240-ohm resistor to ground for calibration.
Informações de conformidade
RoHS compliance indicated by Nanya datasheet. AEC-Q100 not applicable for DRAM.
