NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
Référence : NT5CC256M16DP-DIH ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $29.81 | $29,81 |
| 10 | $27.5 | $275,00 |
| 100 | $25 | $2 500,00 |
| 500 | $22 | $11 000,00 |
| 1 000 | $20 | $20 000,00 |
NT5CC256M16DP-DIH Présentation
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for industrial temperature range (0°C to +95°C). The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination for improved signal integrity. The 96-ball VFBGA package provides a compact footprint suitable for space-constrained designs.
The NT5CC256M16DP-DIH utilizes advanced CMOS process technology, achieving high-speed operation with low power dissipation. It incorporates a temperature-compensated self-refresh mechanism to maintain data integrity across temperature variations. The device also features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing control.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive applications requiring large memory capacity.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Alternatives de remplacement direct pour NT5CC256M16DP-DIH — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5CC256M16DP-DIH (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, CAS Latency, Data Rate, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5CC256M16DP-DII
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
NT5CC256M16DP-DI
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →IS43TR16512B-125KBLI
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
NT5CC256M16DP-DIH Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35 V |
| Débit de données | 1600 Mbps (DDR3-1600) |
| Boîtier | 96-ball VFBGA |
| Plage de température de fonctionnement | 0°C to +95°C |
| Latence CAS | 11 (typical) |
| Burst Length | 8, 4 |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
Configuration des broches de NT5CC256M16DP-DIH
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche B1 | DQ2 — Data input/output 2 |
| Broche B2 | DQ3 — Data input/output 3 |
| Broche B3 | VDD — Power supply |
| Broche B4 | DQ4 — Data input/output 4 |
| Broche C1 | DQ5 — Data input/output 5 |
| Broche C2 | VSS — Ground |
| Broche C3 | DQ6 — Data input/output 6 |
| Broche C4 | DQ7 — Data input/output 7 |
| Broche D1 | VDD — Power supply |
| Broche D2 | DQ8 — Data input/output 8 |
| Broche D3 | DQ9 — Data input/output 9 |
| Broche D4 | VSS — Ground |
Applications typiques
NT5CC256M16DP-DIH convient pour 6 applications: Laptop Memory Modules, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers.
Laptop Memory Modules
The NT5CC256M16DP-DIH is used in DDR3L SO-DIMM modules for laptops, providing 4Gb capacity at 1.35V. Its low voltage reduces power consumption, extending battery life. The 256Mx16 organization allows for easy module design with 16 chips for 8GB modules. The industrial temperature range ensures reliability in various environments.
Recommandé
Networking Equipment
In routers and switches, the NT5CC256M16DP-DIH provides high-speed packet buffering with 1600 Mbps data rate. Its low power consumption is critical for 24/7 operation. The auto self-refresh feature maintains data integrity during idle periods, reducing power draw. The 96-ball VFBGA package fits compact line cards.
Recommandé
Industrial PCs
The NT5CC256M16DP-DIH is ideal for industrial PCs requiring reliable operation in harsh environments. Its 0°C to +95°C temperature range and robust design ensure long-term stability. The 1.35V operation reduces heat generation, improving system reliability. The 4Gb density supports demanding industrial applications.
Recommandé
Automotive Infotainment
The NT5CC256M16DP-DIH is suitable for automotive infotainment systems, providing high bandwidth for multimedia processing. Its industrial temperature range meets automotive requirements. The low voltage reduces power consumption, important for vehicle electrical systems. The device supports write leveling for reliable high-speed operation.
Recommandé
Embedded Systems
In embedded systems, the NT5CC256M16DP-DIH offers a balance of capacity and power efficiency. Its 4Gb density is sufficient for many applications, while 1.35V operation minimizes power draw. The 96-ball VFBGA package is suitable for compact designs. The device's features like auto precharge simplify memory controller design.
Recommandé
Servers
The NT5CC256M16DP-DIH can be used in entry-level servers for memory-intensive tasks. Its 1600 Mbps data rate provides adequate bandwidth for server workloads. The low voltage reduces power consumption in data centers. The device's reliability features ensure stable operation in 24/7 environments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5CC256M16DP-DIH — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5CC256M16DP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball VFBGA | 96-ball VFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- Industrial temperature range (vs MT41K256M16HA-125)
- Low voltage operation (vs K4B4G1646E-BYMA)
- Availability and cost (vs IS43TR16512B-125KBLI)
Notes de conception
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane to minimize noise. Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity, especially for high-speed data lines.
The NT5CC256M16DP-DIH operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball VFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Monitor junction temperature to avoid exceeding the maximum rating.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors (22-33 ohms) near the driver. Ensure the ZQ pin has a 240-ohm resistor to ground for calibration.
Informations de conformité
RoHS compliance indicated by Nanya datasheet. AEC-Q100 not applicable for DRAM.
