NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
MPN： NT5CC256M16DP-DIH ✓ 啟用中NT5CC256M16DP-DIH 概覽
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for industrial temperature range (0°C to +95°C). The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination for improved signal integrity. The 96-ball VFBGA package provides a compact footprint suitable for space-constrained designs.
The NT5CC256M16DP-DIH utilizes advanced CMOS process technology, achieving high-speed operation with low power dissipation. It incorporates a temperature-compensated self-refresh mechanism to maintain data integrity across temperature variations. The device also features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing control.
Typical applications include DDR3L memory modules for laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive applications requiring large memory capacity.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
直接替換替代品，適用於 NT5CC256M16DP-DIH — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： NT5CC256M16DP-DIH （相同外形與佔位） — 差異在於 Package, Supply Voltage, CAS Latency, Data Rate, Density.
NT5CC256M16DP-DII
✅ 直接替換📋 參考替代品（不在目錄中）
NT5CC256M16DP-DI
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-125
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$6.3636 / 單位
查看資料表 →K4B4G1646E-BYMA
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$14.3182 / 單位
查看資料表 →IS43TR16512B-125KBLI
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NT5CC256M16DP-DIH 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| Density | 4 Gbit |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V |
| 資料速率 | 1600 Mbps (DDR3-1600) |
| 封裝 | 96-ball VFBGA |
| 工作溫度範圍 | 0°C to +95°C |
| CAS 延遲 | 11 (typical) |
| Burst Length | 8, 4 |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| RoHS | Compliant |
NT5CC256M16DP-DIH 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | DQ2 — Data input/output 2 |
| 腳位 B2 | DQ3 — Data input/output 3 |
| 腳位 B3 | VDD — Power supply |
| 腳位 B4 | DQ4 — Data input/output 4 |
| 腳位 C1 | DQ5 — Data input/output 5 |
| 腳位 C2 | VSS — Ground |
| 腳位 C3 | DQ6 — Data input/output 6 |
| 腳位 C4 | DQ7 — Data input/output 7 |
| 腳位 D1 | VDD — Power supply |
| 腳位 D2 | DQ8 — Data input/output 8 |
| 腳位 D3 | DQ9 — Data input/output 9 |
| 腳位 D4 | VSS — Ground |
典型應用
NT5CC256M16DP-DIH 適用於 6 應用s: Laptop Memory Modules, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers.
Laptop Memory Modules
The NT5CC256M16DP-DIH is used in DDR3L SO-DIMM modules for laptops, providing 4Gb capacity at 1.35V. Its low voltage reduces power consumption, extending battery life. The 256Mx16 organization allows for easy module design with 16 chips for 8GB modules. The industrial temperature range ensures reliability in various environments.
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Networking Equipment
In routers and switches, the NT5CC256M16DP-DIH provides high-speed packet buffering with 1600 Mbps data rate. Its low power consumption is critical for 24/7 operation. The auto self-refresh feature maintains data integrity during idle periods, reducing power draw. The 96-ball VFBGA package fits compact line cards.
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Industrial PCs
The NT5CC256M16DP-DIH is ideal for industrial PCs requiring reliable operation in harsh environments. Its 0°C to +95°C temperature range and robust design ensure long-term stability. The 1.35V operation reduces heat generation, improving system reliability. The 4Gb density supports demanding industrial applications.
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Automotive Infotainment
The NT5CC256M16DP-DIH is suitable for automotive infotainment systems, providing high bandwidth for multimedia processing. Its industrial temperature range meets automotive requirements. The low voltage reduces power consumption, important for vehicle electrical systems. The device supports write leveling for reliable high-speed operation.
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Embedded Systems
In embedded systems, the NT5CC256M16DP-DIH offers a balance of capacity and power efficiency. Its 4Gb density is sufficient for many applications, while 1.35V operation minimizes power draw. The 96-ball VFBGA package is suitable for compact designs. The device's features like auto precharge simplify memory controller design.
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Servers
The NT5CC256M16DP-DIH can be used in entry-level servers for memory-intensive tasks. Its 1600 Mbps data rate provides adequate bandwidth for server workloads. The low voltage reduces power consumption in data centers. The device's reliability features ensure stable operation in 24/7 environments.
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推薦產品摘要
工程參考資料，適用於 NT5CC256M16DP-DIH — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | NT5CC256M16DP-DII | MT41K256M16HA-125 | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball VFBGA | 96-ball VFBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Nanya | Nanya | Micron | Samsung |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1600 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
主要差異化特點
- Industrial temperature range (對比MT41K256M16HA-125)
- Low voltage operation (對比K4B4G1646E-BYMA)
- Availability and cost (對比IS43TR16512B-125KBLI)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane to minimize noise. Follow the layout guidelines in the Nanya datasheet for DDR3L to ensure signal integrity, especially for high-speed data lines.
The NT5CC256M16DP-DIH operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball VFBGA package has a thermal resistance of approximately [DATA_NEEDED: theta_JA] °C/W. Monitor junction temperature to avoid exceeding the maximum rating.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data lines and 40 ohms for address/command lines. Use series termination resistors (22-33 ohms) near the driver. Ensure the ZQ pin has a 240-ohm resistor to ground for calibration.
合規資訊
RoHS compliance indicated by Nanya datasheet. AEC-Q100 not applicable for DRAM.
