W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond
MPN: W9751G6KB-25 ✓ نشطW9751G6KB-25 نظرة عامة
A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary.
Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation.
The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches.
When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver.
This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.
بدائل مباشرة لـ W9751G6KB-25 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع W9751G6KB-25 (نفس عامل الشكل والبصمة) — يختلف في Memory Type, Organization, Package, Data Rate, Access Time.
W9751G6KB-18
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W9751G6KB-25 TR
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
MT47H64M16HR-25
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
IS43DR16640B-25
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
NT5CB256M16CP-DI
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4T51163QT-BCF8
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
W9751G6KB-25 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | Volatile DRAM (DDR2 SDRAM) |
| حجم الذاكرة | 512 Mbit (32M x 16) |
| التنظيم | 32M words x 16 bits |
| Speed Grade | -25 (DDR2-800) |
| Clock Frequency | 400 MHz |
| معدل البيانات | 800 MT/s |
| Access Time | 57.5 ns (CAS latency timing window) |
| جهد التغذية | 1.8 V typical |
| نوع الواجهة | Parallel DDR2 (SSTL_18) |
| العلبة | 84-ball WBGA / TFBGA, 8 x 12.5 mm |
| Refresh Cycles | 8K (per JEDEC DDR2 standard) |
| Burst Length | 4 or 8 (programmable) |
| زمن الوصول CAS | Programmable (typically 3 to 6) |
| On-Die Termination | Yes (ODT) |
| Self Refresh | Yes |
| نوع التركيب | Surface Mount |
| حالة RoHS | Compliant |
تكوين أطراف W9751G6KB-25
| دبوس A1 | VSS — Ground reference |
| دبوس A2 | DQ15 — Data I/O bit 15 |
| دبوس A3 | DQ13 — Data I/O bit 13 |
| دبوس A4 | DQ11 — Data I/O bit 11 |
| دبوس A5 | DQ9 — Data I/O bit 9 |
| دبوس A6 | DQ7 — Data I/O bit 7 |
| دبوس A7 | DQ4 — Data I/O bit 4 |
| دبوس A8 | DQ2 — Data I/O bit 2 |
| دبوس A9 | DQ0 — Data I/O bit 0 |
| دبوس A10 | VSS — Ground reference |
| دبوس B1 | VDDQ — DQ supply voltage |
| دبوس B2 | VSSQ — DQ ground reference |
| دبوس B3 | DQ14 — Data I/O bit 14 |
| دبوس B4 | DQ12 — Data I/O bit 12 |
| دبوس B5 | DQ10 — Data I/O bit 10 |
| دبوس B6 | DQ6 — Data I/O bit 6 |
| دبوس B7 | DQ5 — Data I/O bit 5 |
| دبوس B8 | DQ3 — Data I/O bit 3 |
| دبوس B9 | DQ1 — Data I/O bit 1 |
| دبوس B10 | VDDQ — DQ supply voltage |
| دبوس C1 | VSS — Ground reference |
| دبوس C2 | UDQS — Upper byte data strobe |
| دبوس C3 | UDQS# — Upper byte complementary data strobe |
| دبوس C4 | DMU (UDM) — Upper byte data mask |
| دبوس C5 | NC — Not connected |
| دبوس C6 | VSS — Ground reference |
| دبوس C7 | VSS — Ground reference |
| دبوس C8 | LDQS — Lower byte data strobe |
| دبوس C9 | LDQS# — Lower byte complementary data strobe |
| دبوس C10 | VSS — Ground reference |
| دبوس D1 | VDD — Core supply voltage |
| دبوس D2 | CKE — Clock enable |
| دبوس D3 | CK — Differential clock positive |
| دبوس D4 | CK# — Differential clock negative |
| دبوس D5 | CS# — Chip select (active low) |
| دبوس D6 | RAS# — Row address strobe (active low) |
| دبوس D7 | CAS# — Column address strobe (active low) |
| دبوس D8 | WE# — Write enable (active low) |
| دبوس D9 | ODT — On-die termination control |
| دبوس D10 | VDD — Core supply voltage |
| دبوس E1 | VSS — Ground reference |
| دبوس E2 | BA0 — Bank address 0 |
| دبوس E3 | BA1 — Bank address 1 |
| دبوس E4 | A10 — Address bit 10 / auto-precharge |
| دبوس E5 | A3 — Address bit 3 |
| دبوس E6 | A2 — Address bit 2 |
| دبوس E7 | A1 — Address bit 1 |
| دبوس E8 | A0 — Address bit 0 |
| دبوس E9 | BA2 — Bank address 2 |
| دبوس E10 | VSS — Ground reference |
| دبوس F1 | VDDQ — DQ supply voltage |
| دبوس F2 | A12 — Address bit 12 |
| دبوس F3 | A11 — Address bit 11 |
| دبوس F4 | A9 — Address bit 9 |
| دبوس F5 | A8 — Address bit 8 |
| دبوس F6 | A7 — Address bit 7 |
| دبوس F7 | A6 — Address bit 6 |
| دبوس F8 | A5 — Address bit 5 |
| دبوس F9 | A4 — Address bit 4 |
| دبوس F10 | VDDQ — DQ supply voltage |
| دبوس G1 | VSS — Ground reference |
| دبوس G2 | NC — Not connected (per datasheet) |
| دبوس G3 | NC — Not connected (per datasheet) |
| دبوس G4 | NC — Not connected (per datasheet) |
| دبوس G5 | NC — Not connected (per datasheet) |
| دبوس G6 | NC — Not connected (per datasheet) |
| دبوس G7 | NC — Not connected (per datasheet) |
| دبوس G8 | NC — Not connected (per datasheet) |
| دبوس G9 | NC — Not connected (per datasheet) |
| دبوس G10 | VSS — Ground reference |
| دبوس H1 | VDDQ — DQ supply voltage |
| دبوس H2 | NC — Not connected (per datasheet) |
| دبوس H3 | NC — Not connected (per datasheet) |
| دبوس H4 | NC — Not connected (per datasheet) |
| دبوس H5 | NC — Not connected (per datasheet) |
| دبوس H6 | NC — Not connected (per datasheet) |
| دبوس H7 | NC — Not connected (per datasheet) |
| دبوس H8 | NC — Not connected (per datasheet) |
| دبوس H9 | NC — Not connected (per datasheet) |
| دبوس H10 | VDDQ — DQ supply voltage |
| دبوس J1 | VSS — Ground reference |
| دبوس J2 | VREF — Reference voltage for SSTL_18 inputs |
| دبوس J3 | NC — Not connected (per datasheet) |
| دبوس J4 | DML (LDM) — Lower byte data mask |
| دبوس J5 | NC — Not connected (per datasheet) |
| دبوس J6 | VSS — Ground reference |
| دبوس J7 | NC — Not connected (per datasheet) |
| دبوس J8 | ZQS0 — Output impedance calibration reference 0 |
| دبوس J9 | VTT — Termination voltage |
| دبوس J10 | VSS — Ground reference |
التطبيقات النموذجية
W9751G6KB-25 مناسب لـ 7 التطبيقs: Industrial Embedded PC Working Memory, Set-Top Box and IPTV Frame Buffer, Networking Switch and Router Memory, Automotive Infotainment Working Memory, Printer and MFP Image Buffer, Display Controller Frame Buffer, Point-of-Sale Terminal Memory.
Industrial Embedded PC Working Memory
The W9751G6KB-25 supplies 512 Mbit of DDR2 working memory for industrial motherboards built around x86 SoCs with JEDEC DDR2 controllers. The 800 MT/s data rate and 32Mx16 organization provide sufficient bandwidth for Linux/WinCE OS boot, application loading, and data buffering. Industrial-grade temperature variants of this Winbond part operate from -40C to +85C, suiting factory automation and outdoor kiosks. The 84-ball WBGA keeps the PCB footprint compact, while JEDEC DDR2 conformance ensures the part initializes cleanly with standard DDR2 firmware sequences.
موصى به
Set-Top Box and IPTV Frame Buffer
Set-top boxes use 512 Mbit of DDR2 memory for video frame buffering, codec working memory, and OS tasks. The W9751G6KB-25's 16-bit wide data bus (x16 organization) and 800 MT/s data rate comfortably decode standard-definition and 720p video streams without bus-bottlenecking. The on-die termination (ODT) simplifies PCB routing by eliminating external resistors, reducing BOM cost. The 1.8 V typical supply keeps set-top box power consumption low for energy-efficiency regulations. Designers route CK/CK, DQS/DQS, and command/address with matched lengths for a clean DDR2 eye.
موصى به
Networking Switch and Router Memory
Low-port-count managed switches and SOHO routers require working memory for the switch SoC, packet buffers, and routing tables. The W9751G6KB-25 supplies 64 MB of DDR2 memory in a single chip, sufficient for forwarding tables and firmware scratch space. The 84-ball WBGA package enables compact router designs where PCB area is constrained. The 1.8 V supply and self-refresh mode support low standby power for Energy Star-rated products. Designers should follow JEDEC DDR2 PCB guidelines: 50 ohm controlled-impedance routing, VTT termination, and matched clock/data strobe lengths.
موصى به
Automotive Infotainment Working Memory
The W9751G6KB-25 in industrial temperature grade serves as working memory in automotive infotainment head units and rear-seat entertainment systems. The 32Mx16 DDR2 architecture provides enough bandwidth for navigation map rendering, Bluetooth audio buffering, and OS operations. The 84-ball WBGA withstands automotive thermal cycling and vibration when properly soldered. Automotive OEMs often require dual-source qualification, so designers verify compatibility with Micron MT47H64M16HR-25 or ISSI IS43DR16640B-25 as alternates. DDR2 remains standard in this segment for cost-sensitive platforms with mature DDR2-capable SoCs.
موصى به
Printer and MFP Image Buffer
Multifunction printers (MFPs) use DDR2 SDRAM as an image buffer between the scanner/copier pipeline and the print engine. The W9751G6KB-25's 64 MB capacity holds full-page raster images at 600 dpi and supports duplex scanning with simultaneous image processing. The 1.8 V supply reduces total printer power consumption, an important metric for Energy Star certification. The compact 84-ball WBGA package suits the dense controller board layout inside printers. JEDEC DDR2 conformance means the part initializes with standard DDR2 firmware across multiple printer-controller SoCs.
موصى به
Display Controller Frame Buffer
Industrial HMI panels, medical displays, and digital signage controllers use 512 Mbit DDR2 SDRAM as a frame buffer for driving TFT-LCD panels at 720p to 1080p resolutions. The W9751G6KB-25's x16 data bus and 800 MT/s bandwidth comfortably drive pixel throughput for 60 fps refresh at 1080p. The on-die termination simplifies board layout for the densely-routed data/address/strobe buses typical of display-controller boards. Designers generate V_REF and V_TT from a low-noise LDO and place decoupling capacitors within 5 mm of each supply ball.
موصى به
Point-of-Sale Terminal Memory
Point-of-sale (POS) terminals and kiosks use DDR2 SDRAM as the main working memory for transaction processing, payment applications, and receipt printing. The W9751G6KB-25's 64 MB capacity handles standard POS software stacks with headroom for receipt graphics and customer-facing displays. The 84-ball WBGA package keeps the POS mainboard compact, and the JEDEC DDR2 conformance means the part works with legacy POS SoCs that still rely on DDR2 controllers. Industrial temperature variants support outdoor kiosks and refrigerated retail environments.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ W9751G6KB-25 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | W9751G6KB-18 | MT47H64M16HR-25 | IS43DR16640B-25 | NT5CB256M16CP-DI | K4T51163QT-BCF8 |
|---|---|---|---|---|---|---|
| Package | 84-ball WBGA (8x12.5 mm) | 84-ball WBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball BGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same |
| Brand | Winbond Electronics | Winbond Electronics | Micron Technology | ISSI | Nanya Technology | Samsung Electronics |
| Memory Type | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Memory Size | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) |
| Speed Grade | -25 (DDR2-800) | -18 (DDR2-1066) | -25 (DDR2-800) | -25 (DDR2-800) | DI (DDR2-800) | BCF8 (DDR2-800) |
| Clock Frequency | 400 MHz | 533 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
| Data Rate | 800 MT/s | 1066 MT/s | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s |
| Supply Voltage | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical |
| On-Die Termination | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) |
| Refresh Cycles | 8K | 8K | 8K | 8K | 8K | 8K |
أبرز الفروقات
- Wide multi-source qualification in the same footprint (مقابلMT47H64M16HR-25)
- Pin-compatible upgrade path to DDR2-1066 (مقابلW9751G6KB-18)
- JEDEC DDR2 standard conformance with ODT (مقابلK4T51163QT-BCF8)
ملاحظات التصميم
Route the 16-bit DQ bus (DQ0-DQ15), differential clock pair (CK, /CK), data strobes (UDQS, UDQS#, LDQS, LDQS#), and command/address bus as 50 ohm controlled-impedance traces on a reference plane. Match clock-to-DQS lengths within +/-25 mils and DQ-to-DQS within +/-50 mils to maintain the DDR2 write/read timing window. Place VTT termination at the far end of the bus with bulk decoupling (>=10 uF) close to the SDRAM, plus 0.1 uF ceramics within 5 mm of each VDD/VDDQ ball.
Generate VDD (1.8 V), VDDQ (1.8 V), VTT (VDDQ/2 = 0.9 V), and VREF (VDDQ/2 = 0.9 V) from low-noise LDOs or synchronous buck converters. VTT must source and sink current during active reads and writes; a tracking regulator that follows VDDQ/2 is recommended. VREF noise must be held under +/-1% to maintain the SSTL_18 input thresholds. Decoupling: 1x 10 uF bulk + 4-6x 0.1 uF ceramics per supply ball group, plus 1x 1 uF on VTT.
Do not exceed the JEDEC DDR2 absolute maximum VDDQ of 2.3 V or minimum of 1.7 V - operation outside this window corrupts the refresh cycle and may damage the device. Do not drive CK without CKE tied high through a valid initialization sequence (NOP -> DESEL -> MRS -> ZQCL) before normal operation. Verify the controller firmware's DDR2 mode register settings match the chosen CAS latency and burst length; mismatches cause subtle read/write errors that are difficult to debug.
DDR2 buses benefit from matched trace lengths and proper termination. Use fly-by VTT routing for point-to-point topologies or T-branch for multi-drop command/address buses. Avoid series resistors on DQ/DQS lines (use ODT instead). For 800 MT/s operation, simulate the channel with IBIS models from Winbond to verify eye margin; typical eye-opening targets are >=250 mV at the receiver pins. Place VREF decoupling (0.1 uF) within 200 mils of the SDRAM VREF pin.
معلومات الامتثال
RoHS compliant per Winbond product page and distributor listings (ROHS COMPLIANT noted on Findic listing). Not AEC-Q100 qualified; industrial temperature variants exist but are not AEC-Q100 automotive-grade. Halogen-free and conflict-minerals status not explicitly stated in available data.
