W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond
MPN: W9751G6KB-25 ✓ פעילW9751G6KB-25 סקירה
A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary.
Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation.
The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches.
When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver.
This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.
חלופות תחליף ישיר עבור W9751G6KB-25 — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם W9751G6KB-25 (אותו גורם צורה וטביעת רגל) — שונים ב Memory Type, Organization, Package, Data Rate, Access Time.
W9751G6KB-18
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
W9751G6KB-25 TR
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT47H64M16HR-25
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
IS43DR16640B-25
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
NT5CB256M16CP-DI
✅ Drop-Inצור קשר לקבלת מחיר
הצג גיליון נתונים ←K4T51163QT-BCF8
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
W9751G6KB-25 דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | Volatile DRAM (DDR2 SDRAM) |
| גודל זיכרון | 512 Mbit (32M x 16) |
| ארגון | 32M words x 16 bits |
| Speed Grade | -25 (DDR2-800) |
| Clock Frequency | 400 MHz |
| קצב נתונים | 800 MT/s |
| Access Time | 57.5 ns (CAS latency timing window) |
| מתח אספקה | 1.8 V typical |
| סוג ממשק | Parallel DDR2 (SSTL_18) |
| מארז | 84-ball WBGA / TFBGA, 8 x 12.5 mm |
| Refresh Cycles | 8K (per JEDEC DDR2 standard) |
| Burst Length | 4 or 8 (programmable) |
| השהיית CAS | Programmable (typically 3 to 6) |
| On-Die Termination | Yes (ODT) |
| Self Refresh | Yes |
| סוג הרכבה | Surface Mount |
| סטטוס RoHS | Compliant |
תצורת פינים של W9751G6KB-25
| פין A1 | VSS — Ground reference |
| פין A2 | DQ15 — Data I/O bit 15 |
| פין A3 | DQ13 — Data I/O bit 13 |
| פין A4 | DQ11 — Data I/O bit 11 |
| פין A5 | DQ9 — Data I/O bit 9 |
| פין A6 | DQ7 — Data I/O bit 7 |
| פין A7 | DQ4 — Data I/O bit 4 |
| פין A8 | DQ2 — Data I/O bit 2 |
| פין A9 | DQ0 — Data I/O bit 0 |
| פין A10 | VSS — Ground reference |
| פין B1 | VDDQ — DQ supply voltage |
| פין B2 | VSSQ — DQ ground reference |
| פין B3 | DQ14 — Data I/O bit 14 |
| פין B4 | DQ12 — Data I/O bit 12 |
| פין B5 | DQ10 — Data I/O bit 10 |
| פין B6 | DQ6 — Data I/O bit 6 |
| פין B7 | DQ5 — Data I/O bit 5 |
| פין B8 | DQ3 — Data I/O bit 3 |
| פין B9 | DQ1 — Data I/O bit 1 |
| פין B10 | VDDQ — DQ supply voltage |
| פין C1 | VSS — Ground reference |
| פין C2 | UDQS — Upper byte data strobe |
| פין C3 | UDQS# — Upper byte complementary data strobe |
| פין C4 | DMU (UDM) — Upper byte data mask |
| פין C5 | NC — Not connected |
| פין C6 | VSS — Ground reference |
| פין C7 | VSS — Ground reference |
| פין C8 | LDQS — Lower byte data strobe |
| פין C9 | LDQS# — Lower byte complementary data strobe |
| פין C10 | VSS — Ground reference |
| פין D1 | VDD — Core supply voltage |
| פין D2 | CKE — Clock enable |
| פין D3 | CK — Differential clock positive |
| פין D4 | CK# — Differential clock negative |
| פין D5 | CS# — Chip select (active low) |
| פין D6 | RAS# — Row address strobe (active low) |
| פין D7 | CAS# — Column address strobe (active low) |
| פין D8 | WE# — Write enable (active low) |
| פין D9 | ODT — On-die termination control |
| פין D10 | VDD — Core supply voltage |
| פין E1 | VSS — Ground reference |
| פין E2 | BA0 — Bank address 0 |
| פין E3 | BA1 — Bank address 1 |
| פין E4 | A10 — Address bit 10 / auto-precharge |
| פין E5 | A3 — Address bit 3 |
| פין E6 | A2 — Address bit 2 |
| פין E7 | A1 — Address bit 1 |
| פין E8 | A0 — Address bit 0 |
| פין E9 | BA2 — Bank address 2 |
| פין E10 | VSS — Ground reference |
| פין F1 | VDDQ — DQ supply voltage |
| פין F2 | A12 — Address bit 12 |
| פין F3 | A11 — Address bit 11 |
| פין F4 | A9 — Address bit 9 |
| פין F5 | A8 — Address bit 8 |
| פין F6 | A7 — Address bit 7 |
| פין F7 | A6 — Address bit 6 |
| פין F8 | A5 — Address bit 5 |
| פין F9 | A4 — Address bit 4 |
| פין F10 | VDDQ — DQ supply voltage |
| פין G1 | VSS — Ground reference |
| פין G2 | NC — Not connected (per datasheet) |
| פין G3 | NC — Not connected (per datasheet) |
| פין G4 | NC — Not connected (per datasheet) |
| פין G5 | NC — Not connected (per datasheet) |
| פין G6 | NC — Not connected (per datasheet) |
| פין G7 | NC — Not connected (per datasheet) |
| פין G8 | NC — Not connected (per datasheet) |
| פין G9 | NC — Not connected (per datasheet) |
| פין G10 | VSS — Ground reference |
| פין H1 | VDDQ — DQ supply voltage |
| פין H2 | NC — Not connected (per datasheet) |
| פין H3 | NC — Not connected (per datasheet) |
| פין H4 | NC — Not connected (per datasheet) |
| פין H5 | NC — Not connected (per datasheet) |
| פין H6 | NC — Not connected (per datasheet) |
| פין H7 | NC — Not connected (per datasheet) |
| פין H8 | NC — Not connected (per datasheet) |
| פין H9 | NC — Not connected (per datasheet) |
| פין H10 | VDDQ — DQ supply voltage |
| פין J1 | VSS — Ground reference |
| פין J2 | VREF — Reference voltage for SSTL_18 inputs |
| פין J3 | NC — Not connected (per datasheet) |
| פין J4 | DML (LDM) — Lower byte data mask |
| פין J5 | NC — Not connected (per datasheet) |
| פין J6 | VSS — Ground reference |
| פין J7 | NC — Not connected (per datasheet) |
| פין J8 | ZQS0 — Output impedance calibration reference 0 |
| פין J9 | VTT — Termination voltage |
| פין J10 | VSS — Ground reference |
יישומים טיפוסיים
W9751G6KB-25 מתאים עבור 7 יישוםs: Industrial Embedded PC Working Memory, Set-Top Box and IPTV Frame Buffer, Networking Switch and Router Memory, Automotive Infotainment Working Memory, Printer and MFP Image Buffer, Display Controller Frame Buffer, Point-of-Sale Terminal Memory.
Industrial Embedded PC Working Memory
The W9751G6KB-25 supplies 512 Mbit of DDR2 working memory for industrial motherboards built around x86 SoCs with JEDEC DDR2 controllers. The 800 MT/s data rate and 32Mx16 organization provide sufficient bandwidth for Linux/WinCE OS boot, application loading, and data buffering. Industrial-grade temperature variants of this Winbond part operate from -40C to +85C, suiting factory automation and outdoor kiosks. The 84-ball WBGA keeps the PCB footprint compact, while JEDEC DDR2 conformance ensures the part initializes cleanly with standard DDR2 firmware sequences.
מומלץ
Set-Top Box and IPTV Frame Buffer
Set-top boxes use 512 Mbit of DDR2 memory for video frame buffering, codec working memory, and OS tasks. The W9751G6KB-25's 16-bit wide data bus (x16 organization) and 800 MT/s data rate comfortably decode standard-definition and 720p video streams without bus-bottlenecking. The on-die termination (ODT) simplifies PCB routing by eliminating external resistors, reducing BOM cost. The 1.8 V typical supply keeps set-top box power consumption low for energy-efficiency regulations. Designers route CK/CK, DQS/DQS, and command/address with matched lengths for a clean DDR2 eye.
מומלץ
Networking Switch and Router Memory
Low-port-count managed switches and SOHO routers require working memory for the switch SoC, packet buffers, and routing tables. The W9751G6KB-25 supplies 64 MB of DDR2 memory in a single chip, sufficient for forwarding tables and firmware scratch space. The 84-ball WBGA package enables compact router designs where PCB area is constrained. The 1.8 V supply and self-refresh mode support low standby power for Energy Star-rated products. Designers should follow JEDEC DDR2 PCB guidelines: 50 ohm controlled-impedance routing, VTT termination, and matched clock/data strobe lengths.
מומלץ
Automotive Infotainment Working Memory
The W9751G6KB-25 in industrial temperature grade serves as working memory in automotive infotainment head units and rear-seat entertainment systems. The 32Mx16 DDR2 architecture provides enough bandwidth for navigation map rendering, Bluetooth audio buffering, and OS operations. The 84-ball WBGA withstands automotive thermal cycling and vibration when properly soldered. Automotive OEMs often require dual-source qualification, so designers verify compatibility with Micron MT47H64M16HR-25 or ISSI IS43DR16640B-25 as alternates. DDR2 remains standard in this segment for cost-sensitive platforms with mature DDR2-capable SoCs.
מומלץ
Printer and MFP Image Buffer
Multifunction printers (MFPs) use DDR2 SDRAM as an image buffer between the scanner/copier pipeline and the print engine. The W9751G6KB-25's 64 MB capacity holds full-page raster images at 600 dpi and supports duplex scanning with simultaneous image processing. The 1.8 V supply reduces total printer power consumption, an important metric for Energy Star certification. The compact 84-ball WBGA package suits the dense controller board layout inside printers. JEDEC DDR2 conformance means the part initializes with standard DDR2 firmware across multiple printer-controller SoCs.
מומלץ
Display Controller Frame Buffer
Industrial HMI panels, medical displays, and digital signage controllers use 512 Mbit DDR2 SDRAM as a frame buffer for driving TFT-LCD panels at 720p to 1080p resolutions. The W9751G6KB-25's x16 data bus and 800 MT/s bandwidth comfortably drive pixel throughput for 60 fps refresh at 1080p. The on-die termination simplifies board layout for the densely-routed data/address/strobe buses typical of display-controller boards. Designers generate V_REF and V_TT from a low-noise LDO and place decoupling capacitors within 5 mm of each supply ball.
מומלץ
Point-of-Sale Terminal Memory
Point-of-sale (POS) terminals and kiosks use DDR2 SDRAM as the main working memory for transaction processing, payment applications, and receipt printing. The W9751G6KB-25's 64 MB capacity handles standard POS software stacks with headroom for receipt graphics and customer-facing displays. The 84-ball WBGA package keeps the POS mainboard compact, and the JEDEC DDR2 conformance means the part works with legacy POS SoCs that still rely on DDR2 controllers. Industrial temperature variants support outdoor kiosks and refrigerated retail environments.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור W9751G6KB-25 — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | W9751G6KB-18 | MT47H64M16HR-25 | IS43DR16640B-25 | NT5CB256M16CP-DI | K4T51163QT-BCF8 |
|---|---|---|---|---|---|---|
| Package | 84-ball WBGA (8x12.5 mm) | 84-ball WBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball BGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same |
| Brand | Winbond Electronics | Winbond Electronics | Micron Technology | ISSI | Nanya Technology | Samsung Electronics |
| Memory Type | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Memory Size | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) |
| Speed Grade | -25 (DDR2-800) | -18 (DDR2-1066) | -25 (DDR2-800) | -25 (DDR2-800) | DI (DDR2-800) | BCF8 (DDR2-800) |
| Clock Frequency | 400 MHz | 533 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
| Data Rate | 800 MT/s | 1066 MT/s | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s |
| Supply Voltage | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical |
| On-Die Termination | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) |
| Refresh Cycles | 8K | 8K | 8K | 8K | 8K | 8K |
מבדילים עיקריים
- Wide multi-source qualification in the same footprint (לעומתMT47H64M16HR-25)
- Pin-compatible upgrade path to DDR2-1066 (לעומתW9751G6KB-18)
- JEDEC DDR2 standard conformance with ODT (לעומתK4T51163QT-BCF8)
הערות תכנון
Route the 16-bit DQ bus (DQ0-DQ15), differential clock pair (CK, /CK), data strobes (UDQS, UDQS#, LDQS, LDQS#), and command/address bus as 50 ohm controlled-impedance traces on a reference plane. Match clock-to-DQS lengths within +/-25 mils and DQ-to-DQS within +/-50 mils to maintain the DDR2 write/read timing window. Place VTT termination at the far end of the bus with bulk decoupling (>=10 uF) close to the SDRAM, plus 0.1 uF ceramics within 5 mm of each VDD/VDDQ ball.
Generate VDD (1.8 V), VDDQ (1.8 V), VTT (VDDQ/2 = 0.9 V), and VREF (VDDQ/2 = 0.9 V) from low-noise LDOs or synchronous buck converters. VTT must source and sink current during active reads and writes; a tracking regulator that follows VDDQ/2 is recommended. VREF noise must be held under +/-1% to maintain the SSTL_18 input thresholds. Decoupling: 1x 10 uF bulk + 4-6x 0.1 uF ceramics per supply ball group, plus 1x 1 uF on VTT.
Do not exceed the JEDEC DDR2 absolute maximum VDDQ of 2.3 V or minimum of 1.7 V - operation outside this window corrupts the refresh cycle and may damage the device. Do not drive CK without CKE tied high through a valid initialization sequence (NOP -> DESEL -> MRS -> ZQCL) before normal operation. Verify the controller firmware's DDR2 mode register settings match the chosen CAS latency and burst length; mismatches cause subtle read/write errors that are difficult to debug.
DDR2 buses benefit from matched trace lengths and proper termination. Use fly-by VTT routing for point-to-point topologies or T-branch for multi-drop command/address buses. Avoid series resistors on DQ/DQS lines (use ODT instead). For 800 MT/s operation, simulate the channel with IBIS models from Winbond to verify eye margin; typical eye-opening targets are >=250 mV at the receiver pins. Place VREF decoupling (0.1 uF) within 200 mils of the SDRAM VREF pin.
מידע על תאימות
RoHS compliant per Winbond product page and distributor listings (ROHS COMPLIANT noted on Findic listing). Not AEC-Q100 qualified; industrial temperature variants exist but are not AEC-Q100 automotive-grade. Halogen-free and conflict-minerals status not explicitly stated in available data.
