MOSFETs
Products (157)
BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS306NH6327XTSA1 is an N-Channel 30 V 2.3 A small-signal OptiMOS power MOSFET housed in a 3-pin SOT-23 (PG-SOT23) surface-mount package. Optimized for low on-state resistance and fast switching, the device dissipates up to 500 mW at Ta=25Ā°C and is qualified to AEC-Q101 for automotive applications, making it suitable for use alongside Infineon's BSS306N family of small-signal/small-power MOSFETs. A small-signal MOSFET is a low-power field-effect transistor designed for switching, level shifting, and load management in compact, high-density designs. Within the broader semiconductor taxonomy, the BSS306N sits in the discrete MOSFET category (MOSFET -> transistor -> discrete semiconductor -> semiconductor), enabling engineers to replace bipolar transistors or build efficient high-side/low-side switches where traditional BJTs would dissipate excessive heat. Key specifications include 30 V drain-source voltage (VDS), 2.3 A continuous drain current (ID) at Ta, an on-resistance of approximately 57 mĪ© typical, and low gate charge for high-frequency operation. The 3-pin SOT-23 package (PG-SOT23) is one of the industry's most common small-outline footprints, allowing direct drop-in compatibility with hundreds of N-channel MOSFETs. Technically, the BSS306N leverages Infineon's OptiMOS technology, providing an optimized silicon trench cell structure that minimizes conduction and switching losses. The standard 2.5 V gate-threshold range allows direct logic-level drive from microcontrollers and ASICs without additional level-shifting circuitry. Typical applications include load switching in portable electronics, power management in battery-powered systems, signal routing in industrial automation, automotive ECUs (body and chassis modules), and general-purpose DC-DC conversion stages. When designing with this part, ensure the gate-source voltage stays within the recommended maximum and provide adequate PCB thermal relief, as 500 mW (Ta) is the absolute limit at 25Ā°C. For high-current or high-ambient designs, derate power dissipation using the thermal resistance curve from the manufacturer datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
The Infineon BSS308PEH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated for -30 V VDS and -2 A continuous drain current in a 3-pin SOT-23 (PG-SOT23) surface-mount package, qualified to the automotive AEC-Q101 standard. It belongs to Infineon's OptiMOS P power-MOSFET family, which is engineered for very low on-state resistance, low gate charge, and high switching speed in a compact footprint. What is a small-signal P-channel MOSFET? A P-channel enhancement-mode MOSFET is a type of field-effect transistor (FET) that conducts when a negative voltage is applied to its gate relative to its source. The 'small-signal' classification refers to devices typically used for switching and amplification at currents under approximately 5 A, in contrast to high-power MOSFETs intended for kilowatt-scale converters. P-channel devices simplify high-side switching circuits by removing the need for a charge pump or bootstrap driver, since the gate can be driven relative to ground. Key features include a maximum drain-source on-resistance RDS(on) of 80 mĪ© at VGS = -10 V, an operating temperature range of -55 Ā°C to +150 Ā°C, and a power dissipation rating of 500 mW on a standard FR4 board. The device is supplied on 3000-piece reels in Tape & Reel packaging and is fully RoHS compliant. The OptiMOS process technology provides an excellent figure of merit (FOM = RDS(on) Ć Qg), making this part particularly effective for low-loss load switching and small DC-DC converter sections. Typical applications include power-rail load switching in portable and battery-powered devices, USB On-The-Go (OTG) power muxing, reverse-polarity protection, level shifters, and general-purpose switching in automotive body electronics and infotainment subsystems. Designers frequently select this part where a P-channel high-side switch is preferred to simplify gate drive. When designing with this device, ensure that VGS never exceeds the +/-20 V absolute maximum and that adequate gate-source pulldown is provided to prevent inadvertent turn-on during transients. A small gate-source resistor (typically 10 kĪ©) is recommended to discharge the gate capacitance and harden the part against dv/dt-induced turn-on.
BSS314PEH6327XTSA1 - -30V P-Ch 1.5A OptiMOS MOSFET | Infineon
The Infineon BSS314PEH6327XTSA1 is a P-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS process, rated for -30V VDS and -1.5A continuous drain current in a 3-pin PG-SOT23 surface-mount package. It is part of the BSS314PE family qualified to automotive standards, delivering 500mW power dissipation at TA and a maximum on-state resistance in the order of 140 mOhm at -10V VGS. A P-channel MOSFET is a type of field-effect transistor (FET) in which the conducting channel is formed by p-type semiconductor material and the device is turned on by applying a negative gate-to-source voltage. P-channel MOSFETs sit in the broader discrete-semiconductor hierarchy: FET -> MOSFET -> power MOSFET -> small-signal/small-power MOSFET -> surface-mount discrete. P-channel parts are particularly useful as high-side load switches because they can be driven directly from a logic-level signal without the charge pump required by N-channel high-side switches, simplifying USB power switching, battery load management, and LED driver topologies. Key features of the BSS314PEH6327XTSA1 include a logic-level compatible -4.5V VGS drive, low Rds(on) for low conduction loss in the ON state, low gate charge for fast switching, and integrated ESD protection. The PG-SOT23-3 footprint uses industry-standard pinout (G-S-D) enabling drop-in replacement on most SOT-23 P-channel layouts. The automotive-grade qualification makes it suitable for AEC-Q101 demanding environments. The OptiMOS chip architecture uses a trench-gate structure to minimize Rds(on) per unit silicon area and to keep gate charge Qg low for high-frequency switching efficiency. Compared to older planar P-channel generations, the trench process delivers roughly 2-3x lower on-resistance in the same die area, allowing the SOT-23 footprint to handle 1.5A continuous drain current with proper PCB copper heat-sinking. Typical applications include USB VBUS load switching, battery protection and power path management in portable electronics, DC-DC converter high-side switches, LED backlight drivers in mobile and display modules, and reverse-polarity protection circuits. Its automotive qualification also opens it to body electronics modules and infotainment rails. When designing with this part, observe the SOA limits carefully because SOT-23 has limited thermal headroom. Provide adequate copper pad area on source pin to keep junction temperature below 150 C, derate ID for ambient temperature above 25 C, and use a gate pull-down resistor to hold the device OFF during MCU reset. Place a TVS or zener from gate to source if the gate trace can see transient over-voltage during hot-plug events. This page synthesizes distributor live pricing, Infineon same-family drop-in alternatives, cross-brand pin-compatible equivalents, and practical PCB thermal guidance that you will not find in the bare datasheet PDF.
BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon
The Infineon BSS316NH6327XTSA1 is an N-channel enhancement-mode small-signal power MOSFET built on Infineon's OptiMOS 2 30V platform, rated for 30V VDS and 1.4A continuous drain current in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It delivers a maximum on-resistance of 160 mOhm at VGS=10V and ID=1.4A, with a typical threshold voltage of 2V at 3.7uA, and is qualified to AEC-Q101 for automotive use. The device is targeted at low-voltage switching applications that demand high efficiency, fast switching, and a tiny footprint. A small-signal N-channel MOSFET is a voltage-controlled majority-carrier device in which applying a positive gate-to-source voltage above the threshold creates an inversion-layer channel that conducts current between drain and source. The "small signal" designation implies sub-2A continuous drain current, optimized gate charge, and a SOT-23-style package intended for PCB-side switching rather than power-stage conduction. Within the broader taxonomy, the BSS316N sits between discrete transistors and dedicated power MOSFETs: discrete semiconductor -> MOSFET -> N-channel MOSFET -> small-signal/OptiMOS family -> OptiMOS 2 30V class. Key features of the BSS316NH6327XTSA1 include a 30V drain-source breakdown voltage, 160 mOhm maximum RDS(on) at VGS=10V, a total gate charge (Qg) of 600 pC at VGS=5V, an input capacitance (Ciss) of 94 pF at VDS=15V, and 500 mW maximum power dissipation at TA=25C. The 3-pin PG-SOT23 package has a low thermal resistance and supports reflow soldering to standard JEDEC J-STD-020 profiles. Pb-free lead plating makes the part RoHS compliant, and AEC-Q101 qualification extends use into automotive electronics. The OptiMOS 2 technology uses an advanced trench-cell process that minimizes cell pitch and reduces both on-resistance per unit area and gate charge. The result is a low FOM (RDS(on) x Qg) figure, which translates into lower conduction and switching losses. Combined with the 30V rating, this cell architecture is well-suited to 12V automotive and 5V/12V industrial rails. Typical applications include load switching in battery-powered portable devices, high-side/low-side switches in DC-DC converter modules, USB power path management, LED backlight driving, and automotive body-electronics modules such as ECU outputs and small motor drivers. The part is also widely used as a generic high-speed level shifter or signal relay in mixed-signal designs. When designing with the BSS316N, place the gate-drive resistor as close to the gate pin as possible to limit ringing, and ensure VGS is fully driven above the threshold for low RDS(on). For switching loads above 100 kHz, account for the 600 pC Qg when sizing the gate driver. This page synthesizes distributor pricing, verified drop-in alternatives, AEC-Q101 compliance, and practical PCB-layout notes not collected in any single Infineon datasheet section.
BSS806NEH6327XTSA1 - 20V N-Ch MOSFET 2.3A SOT-23 | Infineon
The Infineon BSS806NEH6327XTSA1 is an N-channel small-signal enhancement-mode MOSFET rated at 20V VDS and 2.3A continuous drain current (Ta), packaged in a 3-pin PG-SOT23 (SOT-23-3) surface-mount outline with 500mW (Ta) power dissipation. Qualified to AEC-Q101, this part is targeted at automotive and industrial switching applications where compact footprint and high reliability are required. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device whose conduction between drain and source is modulated by the gate-source voltage. Within the broader discrete-semiconductor hierarchy, this part belongs to small-signal MOSFETs -> MOSFETs -> transistors -> discrete semiconductors. The enhancement-mode behavior means the device is normally off at VGS=0 and turns on when VGS exceeds the threshold voltage, simplifying logic-level drive from 3.3V or 5V microcontrollers. Infineon's small-signal N-channel family is widely used for low-side switches, level shifters, and high-frequency DC-DC converter synchronous rectifiers. Key specifications include a maximum drain-source voltage of 20V, a maximum continuous drain current of 2.3A at Ta=25C, and a maximum on-resistance (RDS(on)) of 57 mOhm (per the Infineon BSS806NE product page). The SOT-23-3 package occupies roughly 2.9 mm x 1.3 mm of board area, making it well suited for high-density PCB designs. Pb-free lead plating and RoHS compliance suit modern assembly lines, while AEC-Q101 qualification enables use in automotive body electronics, infotainment, and LED driver subsystems. Typical applications include load switches in 12V automotive systems, high-side/low-side switches for small motors and relays, battery protection circuits in portable devices, and synchronous rectification in low-voltage buck converters. The 57 mOhm RDS(on) keeps conduction losses below ~0.3W at full load, allowing 2.3A switching without external heatsinking in most use cases. Designers should keep in mind the SOT-23 thermal limitations at sustained high current and provide adequate copper pour for heat spreading when used near the rated continuous drain current.
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
The Infineon BSS806NH6327XTSA1 is an N-channel OptiMOSā¢ 2 small-signal MOSFET rated at 20 V VDS and 2.3 A continuous drain current (Ta), housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. With a maximum on-resistance of 57 mĪ© and 500 mW power dissipation, it is engineered for low-voltage, high-efficiency switching where PCB real estate is at a premium. A small-signal N-channel MOSFET in SOT-23 belongs to the discrete semiconductor family tree: MOSFET -> FET -> transistor -> discrete semiconductor. Within that taxonomy the OptiMOSā¢ 2 line is Infineon's 20 V-class trench-generation platform that replaced the older OptiMOSā¢ generation with lower gate charge, lower RDS(on), and tighter logic-level drive thresholds. This device is rated "ultra-logic level" (1.8 V Vgs(th) rated), which means a 1.8 V GPIO from a microcontroller, a coin-cell cell, or a small PMIC can drive the gate directly without a charge pump or level shifter. Key features include a 20 V drain-source breakdown, 2.3 A continuous ID (Ta), 57 mĪ© maximum RDS(on) at VGS=4.5 V, ultra-low gate charge (typical Qg ā 2.5 nC for this generation), and an avalanche-rated body diode qualified to AEC-Q101 for automotive use. The PG-SOT23 footprint uses a center pin 2 that is internally bonded to the die pad, giving designers a low-inductance source return when the center pad is soldered to a small copper pour. Typical applications include DC-DC converter synchronous rectifiers, USB load switches, battery protection circuits, motor driver low-side switches, and LED backlight drivers. Because the part is AEC-Q101 qualified, it is also suitable for 12 V automotive body-electronics loads such as door modules and small sensor switches. When designing with this device, gate-drive strength matters: a 1 kĪ© gate resistor with a 10 kĪ© pull-down keeps the FET off during MCU reset. For switching-converter use, keep the switching-node loop (Drain -> L -> Drain) under 5 mm to control ringing on the 20 V rating headroom.
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSS816NWH6327XTSA1 is an N-Channel 20V 1.4A small-signal MOSFET built on Infineon's OptiMOS 2 process, housed in a 3-pin SOT-323 surface-mount package. It delivers a maximum drain-source on-resistance of 160 mOhm at VGS=4.5V and a continuous drain current of 1.4A at 25C ambient, with a 500mW power dissipation rating. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplification. In the broader component taxonomy, the BSS816NW sits as a discrete semiconductor -> transistor -> MOSFET -> small-signal N-channel MOSFET -> power management building block. Small-signal MOSFETs like this one are optimized for low-current, high-frequency switching rather than high-power conversion. Key features include an ultra-low threshold voltage optimized for 1.8V and 3.3V logic-level drive, low on-resistance per unit area thanks to the OptiMOS 2 trench process, fast switching performance for DC-DC converter and load-switch roles, and an integrated ESD-protected gate. The SOT-323 footprint measures only 2.0mm x 1.25mm, enabling dense board layouts. The device is qualified to AEC-Q101 for automotive reliability stress. Technically, the OptiMOS 2 process uses a trench-gate architecture that minimizes R DS(on) x Qg figure of merit, the key indicator of switching loss. At 4.5V gate drive the part achieves its rated 160 mOhm R DS(on) max, while still switching usefully at 1.8V VGS for direct connection to GPIO outputs of microcontrollers and low-power SoCs. Typical applications include load switching in portable and battery-powered devices, DC-DC converter synchronous rectifier or low-side switch, battery protection and charging path control in wearables, USB power switch rails, and small motor or solenoid drivers in consumer and automotive subsystems. Its AEC-Q101 qualification also makes it suitable for body electronics and infotainment auxiliary rails. When designing with this part, place the gate pull-down resistor (typically 10k to 100k) close to the gate pin to prevent inadvertent turn-on from leakage currents. Keep the source-return and gate-loop areas small to minimize switching transients and ringing. This page synthesizes Infineon datasheet parameters, distributor pricing tiers, and application context not consolidated on any single vendor page.
BSS83PH6327XTSA1 - 60V P-Channel MOSFET 330mA | Infineon
The Infineon BSS83PH6327XTSA1 is a P-channel enhancement-mode small-signal MOSFET rated at -60V VDS and 330 mA continuous drain current, housed in a 3-pin PG-SOT23 (SOT-23-3) surface-mount package. It is part of Infineon's SIPMOS small-signal transistor family and is built using the company's OptiMOS process technology, delivering a typical RDS(on) of 2.0 ohm at VGS = -10 V and a low threshold voltage optimized for 1.8 V to 10 V gate-drive circuits. A P-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by p-type semiconductor material, and conduction is controlled by applying a negative gate-source voltage relative to the source. P-channel devices simplify high-side load switching in low-voltage systems because the load can be tied to ground and the MOSFET sits between the positive rail and the load, removing the need for a charge pump or bootstrap driver. Within the broader taxonomy, P-channel MOSFETs belong to MOSFET -> transistor -> discrete semiconductor -> semiconductor component family, alongside their N-channel counterparts. Key features of the BSS83PH6327XTSA1 include a maximum drain-source voltage of -60V, continuous drain current of 330 mA at TA = 25 C, pulsed drain current of 1.3 A, an on-resistance of 2.0 ohm maximum at VGS = -10 V, and a maximum power dissipation of 360 mW. The PG-SOT23 package measures approximately 2.9 mm x 1.5 mm x 1.0 mm, providing a compact footprint suitable for high-density PCB designs in portable and battery-powered equipment. The device uses Infineon's planar SIPMOS process, which integrates the body diode and gate protection structures on a single die. This construction yields strong ESD robustness and stable threshold characteristics over temperature. The part is qualified to the Infineon automotive grade and is suitable for both consumer and industrial environments operating from -55 C to +150 C junction temperature. Typical applications include load switching in battery management systems, power-rail OR-ing and multiplexing, level shifting between low-voltage MCUs and higher-voltage rails, reverse-polarity protection, and signal gating in portable consumer electronics. It is widely used as a compact high-side switch in handheld devices, IoT nodes, and USB peripherals where board space is at a premium. When designing with this part, observe the 360 mW power dissipation limit at 25 C ambient and derate linearly to zero at 150 C. The gate should be driven with at least -10 V for full enhancement when the lowest RDS(on) is required; lower gate voltages will increase on-resistance and conduction losses. The exposed drain tab is the device's primary thermal path and should be soldered to a copper pad of at least 25 mm squared for adequate heat spreading. This page synthesizes distributor pricing, drop-in same-package alternatives, application references, and practical design notes that go beyond the manufacturer datasheet to accelerate part selection and BOM risk reduction.
BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon
The Infineon BSS84PH6327XTSA2 is a P-channel enhancement-mode small-signal MOSFET rated at -60 V VDS and -170 mA continuous drain current, housed in a 3-pin PG-SOT23 surface-mount package. As a member of Infineon's SIPMOS OptiMOS P-channel family, it is qualified to AEC-Q101 for automotive applications and features logic-level gate drive, low on-state resistance, and integrated dv/dt ruggedness. A P-channel MOSFET (PMOS) is a metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by hole carriers and the source-drain current flows when the gate is pulled below the source potential. PMOS parts serve as high-side switches in load-switch, level-shift, and power-rail inversion topologies; they sit within the broader semiconductor hierarchy of discrete transistors, MOSFETs, and small-signal FETs. The BSS84P family targets compact, low-current switching where N-channel equivalents would otherwise require a charge pump or bootstrap driver. Key specifications include a -60 V drain-to-source breakdown, 8 ohm maximum on-state resistance at VGS = -10 V, and a logic-level threshold that allows direct drive from 1.8 V to 5 V microcontroller GPIO. The dv/dt and avalanche ratings simplify protection design in inductive loads such as relays, solenoids, and small DC motors. The PG-SOT23 footprint measures approximately 2.9 mm x 1.5 mm with a typical thermal resistance of around 250 C/W, keeping the part within its 360 mW power budget when used as a low-duty-cycle signal switch. Architecturally, the device uses Infineon's planar SIPMOS process, which combines P-channel polarity with industry-standard SOT-23 pinning for PCB layout reuse across both P and N-channel small-signal designs. The qualified operating temperature range of -55C to +150C enables under-hood and industrial control deployments beyond commercial-only small-signal MOSFETs. Typical applications include automotive load switching, USB power-distribution switches, battery-polarity protection, signal-level shifting between 3.3 V and 12 V domains, and relay/solenoid driver stages. The logic-level gate makes it equally suited to direct GPIO control in microcontroller-based designs and to discrete inverter stages in motor-control circuits. When designing with this part, observe the maximum gate-to-source voltage of +/-20 V and confirm that peak avalanche energy stays within datasheet limits for inductive loads. A 100 kohm gate pull-up resistor is recommended for fail-safe off-state behavior when the driving GPIO enters high-impedance during reset.
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
The Infineon BSZ060NE2LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOSā¢ technology platform, rated at 25 V drain-source voltage and capable of 12 A continuous drain current at 25 Ā°C case or 44 A pulsed case, housed in a compact surface-mount PG-TSDSON-8-FL package. Its headline parameters are 6 mĪ© maximum on-resistance at 10 V VGS, 25 V VDS, and 44 A IDM (pulsed), making it optimized for high-efficiency DC-DC conversion in space-constrained power designs. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the active switching element in synchronous buck converters, half-bridges, and load-switch circuits. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. Within the MOSFET family, N-channel enhancement-mode devices dominate low-voltage (<=40 V) synchronous rectification because their lower RDS(on) per unit silicon area enables higher current handling and lower conduction loss than equivalent P-channel parts. Key features include Infineon's OptiMOSā¢ trench-gate process, which achieves industry-leading Figure of Merit (RDS(on) Ć Qg) for switching loss reduction, a logic-level compatible gate threshold typically supporting 4.5 V drive, and low thermal resistance through the exposed-die pad. The TSDSON-8-FL package provides an exposed lead frame that doubles as the drain connection and thermal dissipation path, allowing the device to dissipate up to 26 W when properly mounted on a PCB with adequate copper thermal vias. The BSZ060NE2LSATMA1's combination of 25 V rating, sub-10 mĪ© on-resistance, and small footprint makes it particularly suited for point-of-load converters in servers, notebook adapters, USB-PD power paths, and motor drive half-bridges. The OptiMOSā¢ technology family shares a common datasheet and pinout, allowing designers to scale to higher or lower RDS(on) variants without board rework. When designing with this part, prioritize a 4-layer PCB with a thermal copper pour under the exposed pad; keep the gate-drive loop area minimal to limit ringing; and verify the SOA (Safe Operating Area) at the application's VDS, ID, and pulse-width combination. Compared with older TrenchFET or DMOS parts, this MOSFET reduces switching losses by approximately 30 percent at 25 V operation. Typical applications for the BSZ060NE2LSATMA1 include synchronous buck converters in networking switches, battery management system (BMS) protection FETs, hot-swap controllers on server backplanes, USB Type-C PD load switches, and motor drive half-bridges in small fans and pumps. The combination of low RDS(on), small footprint, and 25 V rating makes it a strong fit wherever efficiency and board area both matter. This page synthesizes distributor stock and pricing, pin-compatible drop-in alternatives from Infineon's OptiMOSā¢ family, and practical PCB layout notes not found in the manufacturer datasheet.
CSD13302W - 12V N-Channel NexFET MOSFET | Texas Instruments
The Texas Instruments CSD13302W is a 12V N-channel NexFET power MOSFET in a 1mm x 1mm wafer-level package (WLP), designed for space-constrained applications requiring low on-resistance and gate charge. It delivers a maximum continuous drain current of 1.6A at 25Ā°C ambient and features an ultra-low on-resistance of 14.6mĪ© (typical) at VGS=4.5V, making it ideal for load switching, battery protection, and power management in portable electronics. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between drain and source terminals via an insulated gate voltage. The CSD13302W is an enhancement-mode N-channel device, meaning it requires a positive gate-to-source voltage to conduct. As a discrete semiconductor, it belongs to the MOSFET family, which is a subset of transistors, which are fundamental building blocks in electronic circuits. Key features of the CSD13302W include a low gate charge (Qg) of 4.1nC at VGS=4.5V, which enables fast switching and reduces driver losses. The device also offers excellent thermal performance with a power dissipation of 1.8W at 25Ā°C ambient, and it is RoHS compliant and lead-free. The 4-DSBGA (1x1) package provides a compact footprint with a height of only 0.4mm, suitable for ultra-thin designs. Technically, the CSD13302W utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and gate charge simultaneously. This results in a figure of merit (RDS(on) x Qg) that is competitive in its class. The device is designed for low-voltage applications up to 12V, with a maximum gate-source voltage rating of Ā±8V. It also features an integrated ESD protection diode, enhancing robustness in handling. Typical applications include load switches in smartphones, tablets, and wearables, where the small package and low on-resistance minimize power loss and PCB area. It is also used in battery management systems for overcurrent protection and in DC-DC converter synchronous rectification stages. The low threshold voltage (VGS(th) of 0.9V) allows direct driving from low-voltage logic. When designing with the CSD13302W, ensure that the gate drive voltage is sufficient to fully enhance the channel (recommended VGS=4.5V) to achieve the lowest on-resistance. Also, consider the thermal path: the WLP package relies on the PCB copper for heat spreading, so adequate thermal vias and copper area are necessary for high-current operation.
CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments
The CSD15571Q2 is a 20-V N-channel NexFET power MOSFET from Texas Instruments, housed in a compact 6-pin WSON (DQK) package measuring 2 mm x 2 mm. It features a low on-resistance of 19.2 mĪ© and supports a continuous drain current of 22 A at 25Ā°C, making it suitable for high-density power management applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in switching power supplies, load switches, and battery protection circuits, where efficient switching and low conduction losses are critical. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the CSD15571Q2 include a low gate charge (Qg) for fast switching, a low thermal resistance enabling efficient heat dissipation, and a compact footprint that saves board space. The device is RoHS compliant and lead-free, meeting environmental standards. Its 20-V drain-source voltage rating and 22-A current capability make it ideal for low-voltage, high-current applications. Technically, the CSD15571Q2 utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and reduced switching losses. The device has a maximum power dissipation of 2.5 W at 25Ā°C, and its thermal performance is enhanced by the exposed pad in the WSON package. The gate threshold voltage is typically 1.1 V, allowing logic-level drive. Typical applications include load switching in portable devices, DC-DC converter synchronous rectification, battery protection circuits, and power distribution in industrial systems. The low on-resistance minimizes conduction losses, while the small package enables compact designs. When designing with this MOSFET, ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Also, consider the thermal path: the exposed pad should be soldered to a copper area for effective heat sinking, especially at high currents.
CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI
The Texas Instruments CSD17303Q5 is a 30V N-channel NexFET power MOSFET in the 8-pin VSON-CLIP (DQH) package measuring 5 mm x 6 mm. It delivers up to 32A at 25C ambient (100A at case temperature) with an ultra-low on-resistance of 2.6 mOhm and 3.2W power dissipation at Ta. A power MOSFET is a voltage-controlled semiconductor switch used in the power management hierarchy above gate drivers and below controllers in DC-DC conversion systems. The CSD17303Q5 belongs to TI's NexFET family of optimized MOSFETs for high-efficiency switching power supplies. Key features include optimization for 5V gate drive, ultra-low total gate charge (Qg) and gate-drain charge (Qgd) for fast, efficient switching, avalanche rating for ruggedness, and low thermal resistance enabled by the VSON-CLIP package with exposed clip-bonded pad. The Pb-free terminal plating is RoHS compliant and halogen free per TI datasheet. The NexFET silicon process achieves a superior figure of merit (Rds(on) x Qg), reducing both conduction and switching losses. In synchronous buck converters the CSD17303Q5 is typically used as the control FET, where low Qgd minimizes switching transition losses, while its 2.6 mOhm Rds(on) keeps conduction losses low at high output currents. The 30V rating suits 12V and intermediate bus inputs with margin for transients. Typical applications include notebook point-of-load converters and synchronous buck stages in networking, telecom, and computing systems. The -55C to +150C operating range supports demanding industrial environments. Design tip: verify Vgs derating when driving below 5V, since Rds(on) rises at reduced gate voltage, and maximize copper area on the drain pad to exploit the low thermal resistance of the VSON-CLIP package. As of 2026-08-30, pricing starts around $2.09 at LCSC.
CSD17484F4 - 30V N-Ch FemtoFET MOSFET 3A | Texas Instruments
The Texas Instruments CSD17484F4 is a 30V N-channel NexFET power MOSFET in the ultra-small 3-PICOSTAR (1.0 mm x 0.6 mm) LGA package. Built on TI FemtoFET technology, it delivers 99 mOhm typical on-resistance (128 mOhm max) and up to 3A continuous drain current with 500 mW power dissipation, specifically optimized to minimize footprint in handheld and mobile applications. A power MOSFET is a three-terminal voltage-controlled semiconductor switch used to regulate or switch power in electronic systems. Within the hierarchy of power management components - power management IC to discrete power transistor to small-signal MOSFET - the FemtoFET family occupies the small-signal segment, replacing standard small-signal MOSFETs while providing at least a 60% reduction in footprint size. Key features include the 30V drain-to-source rating suitable for single-cell and multi-cell battery stacks, low gate charge for fast switching with limited drive current, a low gate threshold voltage for 1.8V-2.5V logic-compatible drive, and integrated gate ESD protection that improves assembly robustness on automated SMT lines. The NexFET process technology balances RDS(on) against gate charge, achieving low conduction loss at modest loads while keeping total switching energy low. Because the PICOSTAR LGA package has extremely small thermal mass, PCB copper area is the primary thermal path and must be designed accordingly. Typical applications include smartphone and tablet load switches, portable battery-powered devices, wearable electronics, and low-side switching in compact industrial sensor nodes where board area is the dominant constraint. Design tip: at only 1.0 x 0.6 mm, the land pattern and stencil design directly determine both solderability and RDS(on) performance - follow the TI datasheet (SLPS550) layout recommendations exactly, and verify thermal dissipation with copper pour area rather than assuming package ratings alone.
CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
The Texas Instruments CSD18503Q5A is a 40-V N-channel NexFET power MOSFET in a single 5 mm x 6 mm SON (VSONP, DQJ) 8-pin surface-mount package, specified at 4.3 mOhm on-resistance (3.4 mOhm typical per the TI datasheet description). It is designed to minimize losses in power conversion applications, supporting 19 A continuous current at 25C ambient (100 A case rating) with 3.1 W (Ta) and 120 W (Tc) power dissipation ratings. A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of converters, motor drives, and load-switch circuits; within the hierarchy of power management semiconductors, it sits alongside IGBTs and analog controllers as a core switching element. The NexFET process technology from TI optimizes the RDS(on) x gate-charge figure of merit, reducing both conduction and switching losses versus older trench MOSFET generations. Key differentiating specifications include the low 4.3 mOhm RDS(on) at 10 V gate drive, a 40 V drain-source rating suitable for 12 V and 24 V input bus systems, the low-profile 5x6 mm SON package with exposed drain pad for low thermal resistance, and an operating junction range of -55C to +150C. The SON footprint also provides excellent PCB thermal spreading through the large exposed drain pad. Typical applications include DC-DC converter power stages, synchronous rectification, motor drive half-bridges, and hot-swap or ORing load switches. In these circuits, the low RDS(on) directly reduces conduction losses and heat-sinking requirements, while the NexFET cell structure keeps switching losses low at high frequency. Design consideration: with 4.3 mOhm on-resistance, conduction loss at high current (e.g., 50 A at 50C junction gives roughly 13.5 W) dominates, so thermal design and copper pour area determine usable current more than the 100 A package case limit. Verify SOA limits for pulsed loads per the TI datasheet (CSD18503Q5A datasheet, TI).
CSD22206W - -8V P-Ch 5A WLP MOSFET | Texas Instruments
The Texas Instruments CSD22206W is a -8V P-channel NexFET power MOSFET in an ultra-small 9-ball DSBGA (WLP) package measuring just 1.5 mm x 1.5 mm. It delivers up to 5A of continuous current (Ta) with an on-resistance of 5.7 mOhm (typ 4.7 mOhm at higher VGS) and a power dissipation of 1.7W (Ta), integrating gate ESD protection for robust handling. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in a circuit. Within the power management hierarchy, discrete MOSFETs sit below integrated power stages and above gate drivers as the final switching element in load switches, DC-DC converters, and battery-protection circuits. The NexFET family from TI is optimized for the lowest on-resistance and gate charge in the smallest possible outline. Key features include the 1.5 mm x 1.5 mm WLP footprint, which minimizes board area in space-constrained designs; low RDS(on) of 4.7-5.7 mOhm, which reduces conduction losses and heat generation; integrated gate ESD protection, improving assembly reliability; and excellent thermal characteristics enabled by the wafer-level chip-scale package with solder balls acting directly as thermal paths. The NexFET silicon technology balances cell density and ruggedness, achieving very low on resistance and gate charge simultaneously. The ultra-low profile of the DSBGA package suits stacked-board and wearable form factors where height is restricted. The P-channel polarity simplifies high-side load-switch topologies by eliminating the need for a charge pump or bootstrap drive. Typical applications include battery-operated portable electronics, load switches for power rails, power-path management in smartphones and wearables, and small DC-DC converter stages. The -8V rating and 5A capability fit single-cell lithium-ion battery systems. Design with care regarding thermal management: at 1.7W maximum dissipation in a tiny footprint, PCB copper pours under the solder balls are essential. Verify gate-drive voltage levels, as RDS(on) is strongly VGS dependent in this low-voltage device.
FDA803S-6DY - 3A, 40V Automotive Grade MOSFET | onsemi
The FDA803S-6DY is an automotive-grade N-channel power MOSFET from onsemi, designed for high-efficiency power switching in automotive and industrial applications. It features a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 3A, making it suitable for load switching, DC-DC converters, and motor control circuits. The device is housed in a compact SO-8 package, offering a small footprint for space-constrained PCB designs. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management systems, serving as switches in DC-DC converters, load switches, and motor drivers. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the FDA803S-6DY include a low on-state resistance (RDS(on)) of [DATA_NEEDED: RDS(on)] at 10V gate drive, ensuring minimal conduction losses. The device supports a gate threshold voltage (VGS(th)) of [DATA_NEEDED: VGS(th)], and a maximum power dissipation of [DATA_NEEDED: Power Dissipation]. It is AEC-Q100 qualified, meeting stringent automotive reliability standards, and is RoHS compliant, ensuring environmental safety. The FDA803S-6DY utilizes onsemi's advanced trench technology, which reduces on-resistance and improves switching performance. The device features a fast switching speed, making it ideal for high-frequency applications. Its robust thermal performance, with a junction-to-ambient thermal resistance of [DATA_NEEDED: Thermal Resistance], allows for efficient heat dissipation in demanding environments. Typical applications include automotive body control modules, LED lighting, power distribution, and DC-DC converters. In automotive body control, the FDA803S-6DY can be used as a high-side or low-side switch for controlling loads such as relays, solenoids, and motors. Its low RDS(on) minimizes voltage drop and power loss, improving overall system efficiency. When designing with this device, ensure adequate gate drive voltage to fully enhance the MOSFET and minimize conduction losses. Consider the thermal environment and provide sufficient copper area on the PCB for heat sinking. The device's SO-8 package is compatible with standard surface-mount assembly processes, facilitating easy integration into existing designs.
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mĪ© N-Channel MOSFET | Infineon
The Infineon IAUC120N04S6L005ATMA1 is an automotive-grade N-channel power MOSFET rated at 40 V VDS, 120 A continuous drain current (Tj), and 187 W power dissipation (Tc), housed in the compact PG-TDSON-8-53 (5x6 mm) surface-mount package with an exposed thermal pad. The device features an ultra-low R_DS(on) of 0.55 mĪ© at VGS=10 V and 60 A, and 0.85 mĪ© at VGS=4.5 V, making it one of the lowest-on-resistance 40 V MOSFETs in the Infineon OptiMOS 6 family for automotive 12 V and industrial 24 V rails. The -L005 suffix identifies a 0.55 mĪ© R_DS(on) bin, while the ATMA1 suffix denotes tape-and-reel packaging and AEC-Q101 automotive qualification. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is driven above its threshold voltage. Power MOSFETs sit within the broader power-semiconductor hierarchy: power MOSFET -> MOSFET -> FET -> discrete semiconductor. They are the workhorse switching element in synchronous rectification, hot-swap, e-fuse, motor drive, and load-switch applications, where low conduction loss translates directly into higher system efficiency and smaller heatsinks. Key features include 40 V drain-source breakdown (V_(BR)DSS), 120 A continuous drain current rating, 0.55 mĪ© maximum on-resistance at VGS=10 V, and total gate charge (Qg) of 177 nC at VGS=10 V. The device uses trench-based OptiMOS 6 technology with an intrinsic body diode capable of supporting commutation transients, and is rated for operation from -55 Ā°C to +175 Ā°C junction temperature. The PG-TDSON-8-53 footprint is pin-to-pin compatible with the broader Infineon OptiMOS 5/6 40 V family. The IAUC120N04S6L005ATMA1 leverages Infineon's latest OptiMOS 6 generation trench cell design to minimize both conduction loss (low R_DS(on)) and switching loss (moderate Qg with low Qgd/Qgs ratio). A 175 pF output capacitance C_oss and 11.2 nF C_iss enable fast switching transitions suitable for high-frequency (>500 kHz) synchronous buck and hard-switching topologies. The integrated gate-protection structure provides Ā±16 V VGS tolerance. Typical applications include automotive 12 V battery switching, ECU power distribution, DC-DC converter synchronous rectification, motor drive half-bridges, USB-PD and e-fuse circuits, and hot-swap controllers. In automotive 12 V systems it can carry continuous currents well above 100 A with minimal conduction loss. Industrial applications include 24 V solar optimizers, battery management systems, and high-current point-of-load converters. When designing with this MOSFET, carefully observe the maximum junction temperature of 175 Ā°C and derate appropriately. The exposed pad must be soldered to a sufficiently large copper area (ā„1 inĀ² recommended) to keep RthJA within datasheet limits. A 10 Ī© gate resistor plus a local 100 nF VDD bypass cap near the gate-driver supply is recommended to suppress parasitic ringing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, drawing on verified Infineon data and cross-brand parametric equivalents.
IAUC120N04S6L009ATMA1 - 40V 0.9mĪ© 120A OptiMOS-6 MOSFET | Infineon
The Infineon IAUC120N04S6L009ATMA1 is a 40 V N-channel OptiMOSā¢ 6 power MOSFET rated for 120 A continuous drain current (150 A at Tc per datasheet header) with an ultra-low 0.9 mĪ© maximum R<sub>DS(on)</sub> at 10 V V<sub>GS</sub>, packaged in the 5x6 mm leadless PG-TDSON-8-34 (SS08) surface-mount package. It is qualified to AEC-Q101 for automotive power applications and dissipates up to 150 W at T<sub>C</sub> = 25 Ā°C, making it well suited to high-current 12 V and 24 V automotive systems. Background: A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that regulates current flow between drain and source terminals. OptiMOS-6 is Infineon's sixth-generation 40 V trench MOSFET platform optimized for low R<sub>DS(on)</sub> Ć Q<sub>g</sub> figure of merit. Within the broader taxonomy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. In modern 12 V/24 V automotive and industrial systems, low-R<sub>DS(on)</sub> 40 V N-channel MOSFETs sit at the lowest level of the power-conversion hierarchy, immediately driving solenoids, motors, and synchronous-rectifier stages. Key features of the IAUC120N04S6L009ATMA1 include 0.9 mĪ© max R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, logic-level compatible V<sub>GS(th)</sub> suitable for direct GPIO drive from microcontrollers, 150 A pulsed drain current capability, and an operating junction temperature range of -55 Ā°C to +175 Ā°C. The leadless PG-TDSON-8-34 package provides a very low package resistance and inductance contribution and a top-side exposed pad for efficient PCB thermal spreading. Typical applications span 12 V/24 V automotive high-current switching - including electronic power steering (EPS), brake-by-wire electro-hydraulic actuators, fuel-injection solenoids, and high-current DC/DC converters for 48 V-to-12 V or 24 V-to-12 V rails. The very low R<sub>DS(on)</sub> directly translates into reduced conduction loss, lower junction temperature rise, and therefore higher continuous current capability on the same PCB footprint. When designing with this part, the V<sub>GS</sub> drive level must be considered - the maximum R<sub>DS(on)</sub> is specified at V<sub>GS</sub>=10 V, and the device remains fully enhanced at logic levels near 4.5 V. Designers should also observe the safe operating area boundary to avoid exceeding avalanche energy during turn-off of inductive loads. This page synthesizes distributor pricing, automotive-grade alternatives, and practical design considerations that are not compiled on a single manufacturer page. This page synthesizes distributor pricing, automotive-qualified drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone. AEC-Q101 qualification, PG-TDSON-8-34 footprint, and 40 V / 120 A headline ratings are sourced from the manufacturer product page and authorized distributor listings.
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUC120N06S5L032ATMA1 is a 60 V N-channel power MOSFET rated at 120 A continuous drain current (Tj) with an industry-leading 3.2 mOhm maximum R_DS(on), housed in a surface-mount PG-TDSON-8-34 (5x6 mm) package. Built on Infineon's OptiMOS 5 60 V technology platform, this part targets automotive power management and high-current synchronous-rectification applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current in power-conversion circuits. The N-channel enhancement-mode MOSFET, the dominant type in low-voltage power systems, places the load between the supply rail and the low-side drain path so that a positive gate-to-source voltage turns the device on. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 60 V trench process, designed to lower both conduction loss (low R_DS(on)) and switching loss (low Q_G and gate charge) versus prior generations. Key parametric advantages of the IAUC120N06S5L032ATMA1 include 3.2 mOhm R_DS(on) at 10 V V_GS, 94 W P_D at T_C = 25 C, and an industry-standard SSO8 (5x6 mm) footprint that drops into existing 60 V high-current designs. The part is fully automotive-qualified to AEC-Q101, supporting ADAS power management, 12 V battery-connected load switching, and motor-drive half-bridges in chassis and powertrain ECUs. From an architecture standpoint, the OptiMOS 5 cell shrinks gate charge and output capacitance while keeping a robust body diode for hard-switched topologies. This enables lower switching-node ringing and reduced driver-stage stress, particularly when paired with 12 V gate drivers in half-bridge or buck-converter synchronous-rectifier positions. Typical applications include 12 V automotive power distribution, ADAS sensor and ECU power rails, BLDC motor-drive low-side switches, and high-current synchronous rectification in telecom and server DC-DC converters. When designing with this part, keep source-lead inductance short and place the gate-drive loop area tight to control ringing; verify T_j(max) at worst-case I_D and R_thJA in the PG-TDSON-8-34 footprint, since this 5x6 mm package requires an appropriately sized copper pour for thermal relief. This page consolidates distributor pricing, same-package drop-in alternatives, and design considerations not summarized in the manufacturer datasheet, giving engineers a faster path to sourcing and substitution decisions.
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
The Infineon IAUC60N04S6L039ATMA1 is an N-channel 40 V OptiMOS 6 power MOSFET delivering 60 A continuous drain current at 25 C case temperature, an ultra-low on-resistance of 3.9 milliohm at 10 V VGS, and 42 W power dissipation in a compact 5x6 mm PG-TDSON-8 (SSO8) leadless surface-mount package. The device uses Infineon's latest OptiMOS 6 trench technology optimized for automotive AEC-Q101 environments, combining low figure-of-merit (FOM) switching losses with high inrush current capability (240 A pulsed) and integrated gate-source ESD protection. OptiMOS 6 represents the sixth generation of Infineon's low-voltage power MOSFET platform, a refinement of trench-gate architectures that reduces both conduction and switching losses compared to earlier generations. The technology targets 12 V and 24 V automotive systems where efficiency, thermal behavior, and robustness are simultaneously critical. Within the broader power semiconductor hierarchy, this part sits as: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> automotive-grade power switch. Compared with classic planar MOSFETs of the same voltage class, OptiMOS 6 delivers roughly 30 percent lower R_DS(on) per unit silicon area, which translates into cooler operation, smaller PCB real estate, and higher system-level power density. Key features include 3.9 milliohm maximum R_DS(on) at V_GS = 10 V, a 60 A continuous drain rating (T_C = 25 C) and a 240 A pulsed drain current limit, low gate charge Q_G in the single-digit nC range for fast switching, and 100 percent avalanche-tested ruggedness. The package is qualified to MSL 1 and JEDEC J-STD-020 reflow profiles, and the die is characterized for an operating junction range of -55 C to +175 C. The leadless PG-TDSON-8 footprint also exposes a large source pad, which functions as the primary thermal path and supports high steady-state current without external heatsinking in well-designed copper pours. Typical applications include 12 V automotive ECU power stages, body and chassis ECUs, reverse-polarity protection ORing switches, hot-swap and battery management disconnects, BLDC motor drives for pumps and fans, and high-current DC-DC converter synchronous rectification stages. The 40 V drain rating provides generous margin above the maximum 24 V automotive load-dump transient. Designers should pay attention to gate-drive voltage headroom: full-rated R_DS(on) is achieved at V_GS = 10 V, so a true 10 V gate-drive rail (or higher) is required for full performance. The exposed pad must be soldered to a sufficiently large copper pour to keep junction-to-ambient thermal resistance within budget. This page consolidates distributor pricing, drop-in alternative equivalents, and practical design notes not found in the manufacturer datasheet alone.
IAUCN04S7L019ATMA1 - 40V 1.91mĪ© OptiMOS 7 N-MOSFET | Infineon
The Infineon IAUCN04S7L019ATMA1 is an N-channel 40 V OptiMOSā¢ 7 power MOSFET with 1.91 mĪ© R<sub>DS(on)</sub> and 120 A continuous drain current in a PG-TDSON-8-33 surface-mount package, qualified to AEC-Q101 for automotive BLDC drive, e-motorcycle controller, and 12 V/24 V high-current switching applications. The device is part of Infineon's OptiMOSā¢ 7 40 V family and is supplied on 13-inch tape-and-reel with a 5000-piece standard pack per the ATMA1 ordering code suffix. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal power switch that uses an electric field at the gate to modulate current flow between drain and source. N-channel MOSFETs require a positive gate-to-source voltage to turn on and are the dominant low-side/high-side switch topology in power electronics. Within the broader taxonomy, MOSFETs sit under discrete semiconductors ā transistors ā power transistors, and the OptiMOSā¢ 7 family represents Infineon's latest-generation TrenchFET cells optimized for lowest figure-of-merit R<sub>DS(on)</sub>ĆQ<sub>g</sub>. Key features include an ultra-low 1.91 mĪ© maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, an automotive-grade AEC-Q101 qualification, a logic-level compatible gate threshold, and an exposed-drain PG-TDSON-8-33 package that delivers a thermal resistance on the order of a single-digit Ā°C/W to the PCB copper. The OptiMOSā¢ 7 cell geometry reduces switching losses by approximately 30% versus the previous OptiMOSā¢ 5 generation while halving R<sub>DS(on)</sub>ĆQ<sub>g</sub> figure of merit. Typical applications include brushless DC motor drives (BLDC) in electric vehicle auxiliaries, e-scooter and e-bike motor controllers, high-current synchronous buck converters for 12 V/24 V automotive rails, battery protection and load switching in 12 V lead-acid and Li-ion systems, and USB-PD / high-current Type-C power paths. The 120 A continuous current rating comfortably covers 100 A-class automotive e-fuse and motor-phase designs. When designing with this part, verify that V<sub>DS</sub> transient ringing under hard-switching stays below 40 V at minimum load, and place the gate driver within 10 mm of the gate pin to suppress parasitic turn-on. For multi-MOSFET parallel configurations, gate-source resistors of 10-100 Ī© per device are recommended for dynamic current balancing. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, giving engineers an at-a-glance decision tool for selecting or replacing the IAUCN04S7L019ATMA1 in automotive power designs.
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
The Infineon IAUZ30N06S5L140ATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 30 A continuous drain current (Tj) and 33 W power dissipation (Tc), housed in a compact surface-mount PG-TSDSON-8-32 (also known as S3O8, 3x3 mm) package. It features a maximum on-resistance of 14 mĪ© at VGS=10 V and combines low gate charge, low QGD, and minimized parasitic capacitances to deliver best-in-class Figure-of-Merit (FOM) for switching-converter and motor-drive efficiency. The device is qualified to -55Ā°C to 175Ā°C Tj operation and is part of the automotive-grade (AEC-Q101) OptiMOS 5 60 V family. What is an OptiMOS 5 MOSFET? OptiMOS is Infineon's trench power-MOSFET platform, and the OptiMOS 5 generation represents the fifth major step in that platform, optimized for synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control. The 60 V OptiMOS 5 family targets applications such as LED lighting drivers, ADAS power trees, USB-PD, and 48 V mild-hybrid subsystems, where low RDS(on) and low switching loss directly translate into cooler running parts and higher system efficiency. The MOSFET sits in the broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor, and as an N-channel enhancement-mode device it requires a positive gate drive to turn on. Key differentiating specifications include a 14 mĪ© maximum RDS(on) at VGS=10 V, a total gate charge (Qg) of 12.2 nC at VGS=10 V, and a typical output capacitance (Coss) of 888 pF at VDS=30 V. The PG-TSDSON-8-32 footprint occupies only 3x3 mm of board area and uses a leadless S3O8 package with an exposed drain pad that provides both low thermal resistance and a low-source-inductance connection. Together these attributes minimize both conduction and switching losses, which is the central design goal of the OptiMOS 5 family. The internal architecture uses a deep-trench cell design that increases channel density per unit area while lowering the specific on-resistance (RDS(on)*Area). The result is a part that achieves 14 mĪ© in a much smaller footprint than planar MOSFETs of comparable rating, and that can be driven with standard logic-level gate signals thanks to a typical VGS(th) in the 2.2 V neighborhood. The automotive-grade qualification (AEC-Q101) means the part is validated for harsh thermal and humidity stress typical of under-the-hood automotive environments. Typical applications include synchronous-rectification stages in 48 V-to-12 V DC-DC converters, high-side and low-side switches in motor-driver H-bridges, USB-PD and battery-management power-path FETs, and hot-swap controllers in 12 V/24 V industrial buses. The 60 V drain rating gives substantial margin for 24 V industrial rails and for the ringing seen on 12 V automotive load-dump transients. When designing with this part, place the gate-drive loop area as small as possible to minimize ringing, use a 10 Ī© gate resistor to control dV/dt, and exploit the bottom-source/PCB-drain connection to spread heat through copper pours. Make sure VGS never exceeds the Ā±20 V absolute maximum, and prefer a 10 V drive when full RDS(on) performance is required. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet provides in isolation.
IPB017N10N5LFATMA1 - 100V 1.7mĪ© OptiMOS 5 Linear FET | Infineon
The Infineon IPB017N10N5LFATMA1 is an N-channel OptiMOSā¢ 5 Linear FET rated at 100 V VDS, 180 A continuous drain current (TC), and 313 W maximum power dissipation, housed in a surface-mount PG-TO263-7 (D2PAK-7) package. The device combines a very low RDS(on) of 1.7 mĪ© with a wide safe operating area (SOA), allowing sustained linear-mode operation without the conventional R DS(on) versus linear-capability trade-off. Its PG-TO263-7 footprint supports high-current surface-mount designs with a thermal pad for low junction-to-case resistance. An OptiMOS Linear FET is a specialized trench MOSFET engineered to operate in saturation for extended periods - useful in hot-swap, eFuse, inrush limiting, and battery-protection circuits where a standard MOSFET would otherwise enter thermal runaway. Within the broader taxonomy it sits as: MOSFET -> power MOSFET -> N-channel enhancement MOSFET -> linear FET, and the part family itself is Infineon's OptiMOS 5 Linear FET series. Key features include a 1.7 mĪ© maximum on-resistance at VGS = 10 V, Ā±20 V gate-source voltage rating, and avalanche-rated single-pulse capability. The wide SOA curve allows high current at moderate VDS without immediate failure, which is the defining characteristic of the Linear FET family versus standard OptiMOS 5 devices that are optimized purely for switching. The TO-263-7 (D2PAK) package provides a low thermal resistance path through the drain tab, simplifying heatsink attachment on the PCB. Architecturally, Infineon uses an advanced trench cell design tuned for high transconductance and linear-region ruggedness, with a separate gate-oxide recipe that supports the high inrush currents typical of telecom and server OR-ing applications. The seven-lead PG-TO263-7 variant adds extra source pins (in addition to the tab) to lower source inductance and improve paralleling behavior. Typical applications include 48 V telecom hot-swap controllers, server OR-ing and battery backup units, eMobility DC-link discharge circuits, and industrial programmable logic controllers (PLCs) requiring robust electronic circuit protection. When designing with the part, derate continuously using the SOA graph at the target case temperature and ensure the gate drive stays within Ā±20 V; use a TVS or gate-source resistor for protection against dv/dt-induced turn-on.