MOSFETs
Products (157)
IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
The Infineon IPB038N12N3GATMA1 is a 120V N-channel OptiMOS power MOSFET delivering 120A continuous drain current (at Tc) and 300W power dissipation in a surface-mount PG-TO263-3 (D2PAK) package. Built on Infineon's 120V OptiMOS process, it achieves an extremely low typical on-state resistance of 3.8 mOhm while maintaining industry-leading switching speed, making it suitable for high-frequency power conversion stages where conduction and switching losses both matter. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or convert power in switching power supplies, motor drives, and synchronous rectification stages. Within the broader power semiconductor taxonomy, MOSFETs sit alongside IGBTs and GaN FETs as the dominant building blocks of modern switch-mode power conversion. OptiMOS is Infineon's trench MOSFET technology platform, with the 120V class optimized for telecom, server, automotive 48V mild-hybrid, and industrial DC-DC applications where low Rds(on) and low gate charge directly improve system efficiency. The IPB038N12N3GATMA1 features a logic-level compatible gate drive, low gate charge (Qg), and a low thermal resistance package that supports high continuous current. Its D2PAK (PG-TO263-3) footprint is the surface-mount successor to the classic TO-220 through-hole footprint, sharing the same Gate-Drain-Source pinout and enabling direct PCB migration from legacy through-hole designs. The robust avalanche-rated body diode and dv/dt ruggedness further support hard-switched topologies. This part is typically used as the synchronous rectifier or main switch in 48V telecom bus converters, server and datacom DC-DC bricks, motor drive H-bridges, hot-swap / OR-ing controllers, and high-current battery management protection FETs. Its combination of low Rds(on) and small Qg reduces both conduction and switching losses simultaneously, raising overall efficiency in high-frequency SMPS designs. When designing with this MOSFET, always observe the SOA (Safe Operating Area) limits published in the manufacturer datasheet and keep drain-source voltage well below the 120V rating to absorb ringing and transients. The D2PAK footprint provides excellent thermal coupling to the PCB copper, but at 300W (Tc) the heatsinking requirement depends strongly on the application duty cycle and switching frequency. This page synthesizes real distributor pricing, drop-in same-package alternatives, and design considerations not found in the Infineon datasheet alone. As of 2026-09-11, parts are widely available from authorized distributors including DigiKey, Mouser, LCSC, and Octopart.
IPB17N25S3100ATMA1 - 250V 17A N-Channel MOSFET | Infineon
The Infineon IPB17N25S3100ATMA1 is a 250 V N-channel enhancement-mode power MOSFET in a PG-TO263-3-2 (D2PAK) surface-mount package, qualified to AEC-Q101 for automotive use. It features a continuous drain current of 17 A at Tc, a maximum drain-source on-resistance of 100 mOhm at VGS = 10 V, and a pulsed current capability of 64 A for transient loads. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion and motor-drive applications. MOSFETs sit within the broader hierarchy of discrete semiconductors (transistors), and as an N-channel enhancement-mode part, IPB17N25S3100ATMA1 turns on when a positive gate-source voltage is applied. It belongs to Infineon's OptiMOS family, where low RDS(on) per silicon area reduces conduction losses in high-current switching topologies. Key specifications include a drain-source voltage (VDS) of 250 V, gate-source voltage (VGS) of +/-20 V, total gate charge (Qg) of 19 nC at VGS = 10 V, input capacitance (Ciss) of 1.5 nF, and output capacitance (Coss) of 23 pF. The threshold voltage (VGS(th)) is 4 V, with avalanche-rated ruggedness (100% avalanche tested) and a maximum power dissipation of 107 W at Tc = 25 C. The device uses Infineon's trench-technology cell structure to achieve the 19.3 mOhm typical RDS(on) figure cited in manufacturer collateral, balancing low conduction loss with manageable switching loss for hard-switched converters. The D2PAK package offers a low thermal resistance path suitable for tab-screw mounting or large PCB copper areas. Typical applications include automotive DC-DC converters, 48 V mild-hybrid systems, motor-drive inverter stages, solenoid drivers, and industrial switched-mode power supplies. The 250 V rating also suits telecom brick converters and photovoltaic micro-inverter front-ends. When designing with this part, choose gate-drive voltage of 10 V for full enhancement and minimize loop inductance between drain and source to control switching transients. The tab is electrically connected to the drain; mounting isolation must be considered for heatsink-attached designs. This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for selection and sourcing.
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon IPD031N06L3GATMA1 is a 60V, 100A N-channel power MOSFET built on Infineon's OptiMOS 3 trench technology, housed in a surface-mount PG-TO252-3 (DPAK) package. It features an industry-leading maximum on-resistance of 3.1 mΩ at VGS=10V and supports continuous drain current up to 100A at TC=25°C with a maximum power dissipation of 167W. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate structure (typically a metal-oxide layer, hence the name) to modulate current flow between drain and source terminals. MOSFETs sit within the broader hierarchy of discrete semiconductors and are the workhorse building block of switched-mode power conversion, motor control, and load switching. Within power MOSFETs, the N-channel enhancement-mode family dominates low-voltage (<200V) applications because N-channel carriers have roughly 2-3x higher mobility than P-channel, yielding lower RDS(on) for the same die area. The IPD031N06L3GATMA1's OptiMOS 3 platform is Infineon's third-generation optimized trench cell design, targeting 12V/24V/48V automotive and industrial rails. Key specifications include a 60V drain-to-source breakdown (VDS), 3.1 mΩ maximum on-resistance at VGS=10V, and a low gate threshold around 1.0-2.2V that is fully enhanced at the standard 4.5V/10V logic-level drives. The part is rated for pulsed drain current of 400A (IDM) and offers excellent dv/dt ruggedness. Its PG-TO252-3 (DPAK) footprint enables direct compatibility with standard surface-mount assembly lines and provides a thermal path through the drain tab for heatsink attachment. OptiMOS 3 uses an advanced trench cell geometry and a low-resistance substrate to minimize both conduction losses (RDS(on) × ID²) and switching losses (Qgd × VDS × fsw). This makes the device well suited for high-frequency SMPS, where total power loss determines thermal sizing and efficiency. The 167W power dissipation rating at TC=25°C assumes an infinite heatsink; on a 1 oz copper FR-4 PCB pad of approximately 1 cm², derating reduces usable dissipation to roughly 2-3W. Typical applications include synchronous rectification in 12V/24V DC-DC converters, high-current load switches in automotive ECUs, motor drive H-bridges, battery management protection circuits, and hot-swap controllers. The 60V rating provides ample margin above 24V automotive transients and 48V mild-hybrid rails. When designing with this MOSFET, pay close attention to gate-drive voltage: the device is fully enhanced at 10V VGS but exhibits significantly higher RDS(on) when driven at 4.5V. Always place the gate-source resistor (typically 10-100 kΩ) directly at the gate pin to prevent floating-gate turn-on during high dv/dt switching transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and application notes, providing engineering context not found in a single manufacturer PDF.
IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon
The Infineon IPD090N03LGATMA1 is a 30V N-channel OptiMOS power MOSFET housed in a surface-mount PG-TO252-3-11 (DPAK) package, rated for 40A continuous drain current at 25C case temperature and 42W maximum power dissipation. Built on Infineon's advanced OptiMOS process, the part delivers a typical on-state resistance of 9 mOhm at 10V VGS and 30A ID, with ultra-low gate and output charge optimized for high-frequency switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals in power conversion applications. N-channel power MOSFETs like the IPD090N03LGATMA1 belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 30V OptiMOS family targets synchronous rectification, DC-DC conversion, and hot-swap circuits where switching loss, conduction loss, and thermal performance must be balanced. The IPD090N03LGATMA1 features a logic-level gate threshold that allows direct drive from 4.5V to 10V logic, eliminating the need for gate-driver charge pumps in low-voltage applications. Its low Qgd / Qgs ratio supports fast switching transitions in the 100-500 kHz range typical of buck converters, and the 42W power rating gives substantial thermal headroom on a 1 square-inch copper pad. The 30V drain-source breakdown provides >25% margin over 19V input rails in 12V adapter-fed designs. Typical applications include high-frequency synchronous buck converters in telecom and datacom equipment, hot-swap and OR-ing controllers in 12V server power distribution, USB-PD and battery protection circuits, and motor-drive low-side switches. The 40A continuous rating supports multi-amp point-of-load regulators on densely populated PCBs. When designing with this MOSFET, derate drain current aggressively with rising ambient temperature using the manufacturer's SOA curves, and place the gate drive loop within 5mm of the gate pin to minimize ringing. The exposed pad (DPAK tab) must be soldered to a copper area of at least 30 mm^2 for thermal performance within datasheet limits. This page synthesizes distributor pricing, pin-compatible OptiMOS-family drop-in alternatives, and practical PCB thermal notes not collated in the manufacturer datasheet.
IPD30N08S2-22 - 75V 30A N-Ch OptiMOS DPAK | Infineon
The Infineon IPD30N08S2-22 is an N-channel enhancement-mode power MOSFET from the OptiMOS family, rated for 75V drain-source breakdown voltage and 30A continuous drain current with an ultra-low maximum on-state resistance of 21.5 mOhm at VGS=10V, in the PG-TO252-3-11 (DPAK-2) surface-mount package. A power MOSFET is a voltage-controlled field-effect transistor optimized for switching high currents at high efficiency. Within the power-semiconductor hierarchy (MOSFET -> discrete power transistor -> power management component), MOSFETs dominate low- and medium-voltage switching because of their fast switching speed, low gate drive power, and low conduction losses. Key features include AEC-Q101 automotive qualification, MSL1 rating up to 260C peak reflow, a -55C to +175C operating temperature range, 100% avalanche testing for robust unclamped inductive switching, and a green lead-free package. The ultra-low RDS(on) minimizes conduction losses (P = I2 x RDS(on)), while the logic-level gate threshold permits direct drive from 3.3V or 5V microcontrollers. The device uses Infineon planar technology, which the datasheet describes as delivering the world's lowest RDS(on) at 75V class in planar technology, combined with the highest current capability and the lowest switching and conduction power losses of its class. Optimized gate charge and output capacitance reduce switching losses in high-frequency converter topologies. Typical applications include automotive body control modules, electric power steering, DC-DC converters, motor drives, and load switches in 12V and 24V systems, where the 75V rating provides ample margin against load-dump transients. Design tip: ensure at least 10V of gate drive for full enhancement and provide generous copper area on the drain tab for thermal dissipation; derate current at high ambient temperatures.
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
The Infineon IPD90N03S4L02ATMA1 is an N-channel enhancement-mode OptiMOS-T2 power MOSFET rated at 30 V VDS, 90 A continuous drain current at Tc, and 136 W power dissipation, housed in a surface-mount PG-TO252-3-11 (DPAK) package. Built on Infineon's OptiMOS-T2 trench process, it delivers a typical on-state resistance of 2.2 mΩ at VGS=10 V and combines low switching losses with 100% avalanche-tested robustness for high-efficiency synchronous rectification, motor control, and automotive PWM stages. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that uses a gate oxide to modulate a conductive channel between source and drain. In the OptiMOS-T2 family, an N-channel trench-gate cell shrinks the R_DS(on) x area figure of merit, falling under the broader power MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor. This places the part firmly inside Infineon's automotive-grade discrete semiconductor portfolio optimized for 12 V/24 V vehicle bus systems. Key features include a 2.2 mΩ maximum R_DS(on) at VGS=10 V, 4.5 V to 10 V gate-drive compatibility for direct MCU/PWM control, and an operating junction range up to 175°C. The device is AEC-Q101 qualified, MSL1 rated for up to 260°C peak reflow, and shipped in a Green Package that is RoHS compliant. Per datasheet, the part is 100% avalanche tested, providing proven ruggedness for unclamped inductive switching events common in motor windings and solenoid loads. The OptiMOS-T2 cell architecture uses a vertical trench with a split-gate structure that reduces gate charge (Qg) and Miller capacitance (Cgd) versus the prior OptiMOS generation. This lowers switching energy at high PWM frequencies (50-300 kHz), enabling smaller magnetics in synchronous buck converters and reduced dead-time loss in half-bridges. The 175°C junction rating also sustains continuous high-current operation in sealed under-hood enclosures. Typical applications include automotive electronic power steering (EPS), brushed DC and BLDC motor drives, LED driving and headlamp load management, DC-DC synchronous buck and synchronous rectification stages, battery protection and hot-swap circuits, and industrial solenoid/relay drivers. The wide safety margin between 90 A continuous rating and typical 30-40 A application currents supports robust inrush handling. When designing with this part, derate continuous drain current to roughly 60-70 A in a real PCB layout with limited copper pour, and verify gate-drive strength to fully enhance the channel (VGS ≥ 10 V recommended). The exposed tab on the PG-TO252-3-11 package must be soldered to a thermal pad of at least 1 sq. in. copper for full 136 W dissipation capability. This page consolidates distributor pricing, parametric drop-in alternatives, and practical PCB-thermal design notes that go beyond the manufacturer datasheet to give automotive and industrial design engineers a faster, more confident selection workflow.
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
The Infineon IPG20N10S436AATMA1 is a dual N-channel 100V, 20A OptiMOS power MOSFET array in a surface-mount PG-TDSON-8-10 (Wettable Flank) package, rated for 43W total power dissipation and AEC-Q101 automotive qualification. Two independent enhancement-mode N-channel MOSFETs share the same footprint, simplifying half-bridge, full-bridge, and synchronous-rectification designs. A dual MOSFET array integrates two die into one package to deliver a compact, thermally efficient switch network for power conversion. Within the broader semiconductor taxonomy, it sits under power MOSFET -> discrete semiconductor -> transistor. The OptiMOS family from Infineon targets low on-state resistance and high switching speed in voltage classes from 30V up to 250V, making this 100V member well-suited for 48V automotive subsystems, 24V industrial rails, and motor-drive bridges. Key features include 100V drain-source breakdown (VDS), 20A continuous drain current per channel, low RDS(on) for reduced conduction loss, and a wettable-flank lead frame that enables automated optical inspection (AOI) of solder joints. The part is 100% avalanche-tested, supports MSL1 up to 260C peak reflow, and operates across -55C to +175C junction temperature. Green-product (RoHS-compliant) construction and AEC-Q101 qualification make it drop-in ready for automotive and harsh-environment designs. Internally, each die uses a TrenchFET-style vertical DMOS cell structure that minimizes on-resistance per unit area while keeping gate charge low. The PG-TDSON-8-10 package exposes the die-attach pad for low thermal resistance, supporting the 43W power budget at moderate PCB copper area. Typical applications include automotive 48V mild-hybrid power stages, DC-DC converter synchronous rectification, brushed and BLDC motor driver half-bridges, and solenoid/relay driver arrays. The dual-MOSFET arrangement is particularly efficient where two switches operate in complementary fashion, such as in H-bridge motor topologies. When designing with this part, ensure the gate-drive voltage exceeds the threshold under all temperature conditions and that the PCB thermal design dissipates 43W within the junction temperature budget. Decoupling the gate-drive supply close to each gate pin suppresses ringing during fast switching transitions. This page consolidates distributor pricing, verified drop-in alternatives, and design guidance that go beyond the manufacturer datasheet summary.
IPP60R099C7 - 600V 99mOhm 22A CoolMOS C7 MOSFET | Infineon
The Infineon IPP60R099C7 is an industrial-grade N-channel power MOSFET from the CoolMOS C7 superjunction (SJ) family, rated for 600 V drain-source voltage, 22 A continuous drain current at 25C, and 99 mOhm on-state resistance at VGS = 10 V, housed in a through-hole TO-220 (PG-TO220-3) package. A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-source current through a gate-generated electric field. Power MOSFETs sit within the discrete semiconductor family alongside diodes, thyristors, and IGBTs, and serve as the primary switching elements in power electronics such as SMPS, inverters, and DC-DC converters. The CoolMOS C7 series uses superjunction technology - alternating p- and n-type pillars in the drift region - to achieve high breakdown voltage with very low on-resistance and reduced parasitic capacitances versus conventional planar MOSFETs. Key features include a best-in-class figure of merit (low RDS(on) x Qg) that reduces conduction and switching losses, approximately 50% lower turn-off losses (Eoss) compared to the CoolMOS CP series, and an avalanche energy rating (EAS) of 97 mJ for robustness in unclamped inductive switching. The gate threshold voltage is typically 3.5 V with a maximum gate-source rating of +/-20 V, and the junction temperature range is -55C to +150C. Technically, the superjunction architecture shrinks die area and capacitances, enabling high-frequency operation in CCM PFC and LLC resonant topologies. The fast body diode benefits bridge and LLC designs where reverse recovery performance matters. Typical applications include PFC stages in server and telecom power supplies, LLC resonant converters, solar inverters, and EV charging infrastructure. Design tip: use a 5-10 Ohm gate resistor and provide adequate heatsinking; as of 2026-08-29, verify Eoss and Qg values in the official datasheet for your exact switching frequency.
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
The Infineon IPT007N06NATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 60 V technology, rated for 60 V VDS, 300 A continuous ID (at TC = 25 C), and 375 W power dissipation in the compact PG-HSOF-8-1 (TOLL) surface-mount package. With a maximum on-resistance of 0.75 mOhm at VGS = 10 V, this device is engineered for ultra-low conduction loss in high-current switching applications. It ships on tape and reel with a 3000-piece standard pack quantity and is fully RoHS compliant. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and modulate current in power-conversion circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> FETs -> power MOSFETs. The OptiMOS 5 family from Infineon represents the fifth-generation trench MOSFET platform optimized for low RDS(on), low gate charge, and high avalanche ruggedness, making these parts the workhorse of modern synchronous rectification, motor drive, and hot-swap designs. Key differentiating features include the 0.75 mOhm maximum RDS(on), industry-leading figure-of-merit (FOM = RDS(on) x QG), and a thermally enhanced PG-HSOF-8-1 package with an exposed source pad that drops thermal resistance dramatically compared with standard SO-8 footprints. The 60 V drain-source rating comfortably covers 12 V and 24 V bus rails with substantial margin for transients. Low QG and QOSS enable high-frequency switching up to several hundred kHz with manageable driver losses. Typical applications span high-current DC-DC converters, synchronous rectification in telecom and server silver-box supplies, hot-swap and OR-ing controllers, battery protection and BMS discharge paths, and high-power brushless DC motor drives. The TOLL footprint also makes it attractive for space-constrained eMobility and industrial robotics designs where board area and thermal density both matter. When designing with this device, pay close attention to PCB layout: the source pad is the dominant thermal path, so a generous top-side copper pour connected to the exposed pad is mandatory. Driver placement should minimize the gate-loop inductance to prevent unwanted ringing and dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond a single datasheet summary, giving engineers the cross-reference context needed for second-source qualification.
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon IPT015N10N5ATMA1 is an N-channel power MOSFET rated at 100V VDS, 300A continuous drain current (Tc), and a maximum on-resistance of 1.5 mΩ, built on Infineon's OptiMOS™ 5 technology and housed in the surface-mount PG-HSOF-8-1 (TOLL) package. It is optimized for synchronous rectification and high-frequency switching, delivering up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation. Maximum power dissipation is 375W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current between the drain and source terminals. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and are the dominant topology for low-voltage, high-current conversion because their majority-carrier channel yields the lowest conduction loss per unit silicon area. Modern power MOSFETs such as OptiMOS™ 5 belong to the broader power management semiconductor hierarchy: discrete MOSFET -> power discrete -> power semiconductor -> semiconductor device. Their key metrics - on-resistance RDS(on), gate charge Qg, output capacitance COSS, and Figure-of-Merit (RDS(on) x Qg) - directly determine the efficiency and thermal envelope of any switched-mode power supply, motor drive, or battery protection circuit. The IPT015N10N5ATMA1's headline figure-of-merit, combined with its 100V rating, makes it particularly effective in 48V automotive systems, telecom hold-up converters, and high-current synchronous buck or half-bridge stages. The TOLL (PG-HSOF-8-1) package offers an exposed top-side cooling pad compatible with double-sided cooling, allowing thermal resistance to be lowered substantially versus standard SO-8 footprints. The 300A pulsed current capability supports very high transient loads such as inrush, hot-swap, and e-fuse events. When designing with this part, pay close attention to gate-drive voltage (OptiMOS 5 is fully specified at VGS = 10V), keep the gate-drive loop physically small to suppress ringing, and observe the safe operating area shown in Diagram 2 of the manufacturer datasheet for case temperatures other than the rated Tc. The combination of low RDS(on), low Qg, and the thermally-enhanced HSOF-8 package makes this part an industry-favored synchronous FET for high-density server, telecom, and automotive 48V applications.
IRF4905PBF - 55V P-Channel 74A HEXFET MOSFET | Infineon
The Infineon IRF4905PBF is a -55V P-channel HEXFET power MOSFET rated for -74A continuous drain current and 200W power dissipation, housed in a through-hole TO-220AB package. The PBF suffix denotes a lead-free, RoHS-compliant termination. Built on Infineon's fifth-generation HEXFET process, the device achieves an extremely low on-resistance of 20 mΩ per silicon area while preserving the fast switching and ruggedness that HEXFET Power MOSFETs are known for. A P-channel MOSFET is a voltage-controlled device whose drain-source conduction is triggered by a gate-source voltage of the same polarity as the source (negative for P-channel). Because P-channel devices can be driven by pulling the gate low relative to the source, they are widely used as high-side switches in half-bridge and buck topologies, where their gate-drive simplicity avoids the bootstrap network required by an N-channel high-side switch. In the broader taxonomy, the IRF4905PBF sits as: MOSFET -> power MOSFET -> P-channel MOSFET -> discrete semiconductor -> power management building block. Key specifications include -55V drain-source breakdown (VDS), -74A continuous drain current at TC (ID, with package-limited pulse rating higher), 20 mΩ max on-resistance at VGS=-10V, 120 nC total gate charge, and a fast switching edge suitable for 100 kHz-class converters. The TO-220AB package offers three through-hole leads (Gate, Drain, Source from left to right when viewing the front of the package) and a metal tab that doubles as the drain connection and a thermal dissipation path with θJC of approximately 1.0 °C/W. Architecturally, the device uses Infineon's HEXFET cellular planar process, which places thousands of parallel MOSFET cells across the die to minimize RDS(on) while maintaining SOA robustness. The fifth-generation refinement shrinks cell pitch, reduces gate charge, and improves avalanche energy rating compared to earlier generations, enabling higher current density and more efficient switching. Typical applications include high-side switching in motor drives (H-bridge high-side), battery protection and reverse-polarity protection circuits, load switches and power OR-ing, DC-DC converter synchronous-rectifier high-side replacements, and audio amplifier output stages where high current pulses demand low on-resistance to minimize dissipation. A critical design consideration is the gate-drive requirement: because this is a P-channel device, the gate must be pulled at least -10V below the source to fully enhance. Designers must ensure the gate driver can swing between VSOURCE and VSOURCE-10V or lower, accounting for the source-follower configuration when the device is used as a high-side switch. This page synthesizes distributor pricing, drop-in TO-220AB alternatives, and practical thermal/SOA guidance not found in the manufacturer datasheet alone.
IRF540ZPBF - 100V 36A N-Channel HEXFET MOSFET | Infineon
The Infineon IRF540ZPBF is a 100 V, 36 A N-channel HEXFET Power MOSFET in a TO-220AB through-hole package, designed using advanced process technology to deliver extremely low on-resistance per silicon area. It features 26.5 mOhm maximum R_DS(on) at V_GS=10V, 42 nC total gate charge, 175 degC maximum junction temperature, and improved repetitive avalanche ruggedness. These characteristics make it an extremely efficient and reliable device for automotive-grade power switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently switch and amplify signals in power electronics. The HEXFET family represents Infineon's optimized vertical DMOS architecture, which falls under the broader categories of: discrete semiconductor -> MOSFET -> N-channel MOSFET -> power MOSFET -> switching transistor. The IRF540Z series specifically targets the 100 V breakdown class, occupying a middle position between low-voltage logic-level parts and high-voltage IGBTs, and is widely used for synchronous rectification, DC-DC conversion, motor drive, and relay replacement. Key features of the IRF540ZPBF include ultra-low on-resistance (26.5 mOhm max), fast switching speed enabled by low Q_g (42 nC typical), fully avalanche-rated design, and a TO-220AB package with industry-standard pinout that allows direct drop-in replacement of legacy IRF540-series parts. The device is also qualified for automotive environments, with extended temperature range and enhanced reliability testing. Technically, the IRF540ZPBF uses a stripe-cell DMOS design with a polysilicon gate, achieving an excellent figure-of-merit (FOM = R_DS(on) x Q_g) for its voltage class. The 175 degC maximum junction temperature and 92 W power dissipation rating give designers substantial thermal headroom in industrial and automotive systems. Compared with older IRF540 generations, the 'Z' suffix variant offers significantly lower on-resistance while preserving the same TO-220AB footprint. Typical applications include DC motor drives in automotive and industrial systems, solenoid and relay drivers, switching-mode power supplies (SMPS) primary-side switches, DC-DC converters, battery protection circuits, and general-purpose high-current switching. It is widely used as an upgrade for IRF540N, IRF640, and similar 100 V-class MOSFETs. When designing with the IRF540ZPBF, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge the input capacitance within the desired switching interval. A 10 Ohm gate resistor is recommended to damp ringing, and the drain-source avalanche energy must be derated according to junction temperature using the SOA curves in the datasheet. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes beyond what the manufacturer datasheet alone provides, enabling faster BOM decisions and second-source qualification.
IRF7205PBF - -30V P-Channel HEXFET MOSFET, 4.6A, SO-8 | Infineon
The Infineon IRF7205PBF is a fourth-generation HEXFET P-channel power MOSFET rated for -30V VDS and continuous drain current up to -4.6A, housed in an industry-standard 8-pin SO-8 surface-mount package. It utilizes advanced processing techniques to achieve an extremely low on-resistance per silicon area, with a maximum RDS(on) of 70 mOhm at VGS = -10V, making it well suited for high-efficiency load switching and low-side reverse-battery protection. A P-channel MOSFET is a voltage-controlled device in which the conducting channel is formed by p-type dopants between the source and drain. Because the channel turns on when the gate is pulled below the source potential, P-channel devices simplify high-side switching by eliminating the need for a boosted gate-drive supply. P-channel MOSFETs sit within the broader transistor family (P-MOSFET -> MOSFET -> discrete semiconductor -> power management) and are commonly used as load switches, battery isolation switches, and level shifters in portable, automotive, and industrial systems. Key specifications of the IRF7205PBF include a gate threshold voltage typically around -1V to -3V, low gate charge for fast switching, and a planar cell structure that provides a wide safe operating area (SOA). The device is JEDEC-qualified and silicon-optimized for switching frequencies below 100 kHz, which covers most DC-DC converter and power-ORing applications. The ruggedized device design tolerates inductive switching transients, and the SO-8 footprint is one of the most widely adopted surface-mount power packages. Typical applications include high-side load switching in notebook computers, USB power distribution, battery management systems, motor drive half-bridges (as the high-side switch), and hot-swap controllers. The -30V rating provides comfortable margin for 12V automotive rails and 19V laptop adapters, while the low on-resistance minimizes conduction loss. When designing with this part, observe the SOA curve from the manufacturer datasheet and ensure that the maximum junction temperature of 150C is not exceeded under worst-case load and ambient conditions. Because P-channel turn-on requires VGS below ground, pay attention to gate-drive headroom, particularly in low-voltage systems below 5V. A gate resistor of 10-100 ohm is typically recommended to control ringing and EMI.
IRF7205TRPBF - P-Ch -30V -4.6A 70mΩ SO-8 MOSFET | Infineon
The Infineon IRF7205TRPBF is a P-channel power MOSFET built on the company's fourth-generation HEXFET process, rated for -30 V drain-source voltage, -4.6 A continuous drain current (at TA = 25 °C), and 70 mΩ maximum on-resistance, all delivered in the industry-standard 8-pin SO-8 surface-mount package. The suffix "TRPBF" denotes a tape-and-reel packaging variant with lead-free (Pb-free) plating. As a P-channel device, the IRF7205TRPBF is commonly used for high-side load switching where a single low-side gate-drive signal is preferred over an N-channel bootstrap configuration. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device that regulates power flow between drain and source terminals via an insulated gate. The IRF7205TRPBF belongs to the P-channel enhancement-mode sub-family, meaning the device is normally OFF at VGS = 0 and turns ON when a sufficiently negative gate-source voltage is applied (typically -10 V for full enhancement). Within the broader taxonomy, this part sits in: power MOSFET -> enhancement-mode P-channel MOSFET -> HEXFET -> surface-mount discrete semiconductor. Key differentiating features include an advanced IR MOSFET process technology, ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching capability, lead-free plating, and an ultra-low threshold-gate charge of 27 nC (Qg) that minimizes driver losses. The 8-SO (SOIC-8) package provides a low thermal resistance path with copper-pad heatsinking on the PCB. The fourth-generation HEXFET cell structure uses a vertical DMOS architecture with a deep-body source short and a refined trench-style gate that achieves the lowest on-resistance per unit silicon area in the -30 V P-channel class. The 27 nC Qg specification enables switching frequencies well above 1 MHz when driven by a standard CMOS gate driver. Typical applications include high-side load switches, DC-DC synchronous-rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and motor-drive half-bridges in industrial automation. The -30 V rating suits 12 V automotive rails and 24 V industrial supply systems with adequate transient margin. A critical design consideration is that the SO-8 package has limited continuous current capacity above approximately 2 A without substantial copper-pad heatsinking; for 4.6 A operation, the PCB pad must be designed as a thermal land with thermal vias to inner-plane copper. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
IRF7313TRPBF - Dual N-Channel 30V 6.5A MOSFET SO-8 | Infineon
The Infineon IRF7313TRPBF is a dual N-channel power MOSFET array rated at 30V VDS, 6.5A continuous drain current, and 29 mOhm maximum on-resistance per channel, housed in a surface-mount 8-pin SOIC (SO-8) package with 2W power dissipation. Marketed under International Rectifier's IR MOSFET Generation V (HEXFET Fifth Generation) technology, the device integrates two independent N-channel enhancement-mode MOSFETs in a single SO-8 outline for compact half-bridge and synchronous-rectifier topologies. A dual N-channel MOSFET array belongs to the discrete MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) family, which sits within the broader power semiconductor taxonomy (MOSFET -> power transistor -> discrete semiconductor). It is widely used as a building block for synchronous switching, load switching, and small motor control where space is at a premium. Generation V (Gen V) IR MOSFETs use advanced trench process technology to deliver lower RDS(on) per unit silicon area than legacy planar devices. Key features include a low on-resistance of 29 mOhm maximum at VGS=10V, a logic-level gate drive compatibility threshold (VGS(th) in the 1V-2.5V range), fully avalanche-rated silicon, and a dual-die common-source connection. The SO-8 package exposes the drain tab for both MOSFETs via the standard 8-pin land pattern, providing excellent thermal coupling to PCB copper. The Pbf suffix indicates lead-free, RoHS-compliant termination plating. The IRF7313TRPBF's Generation V process technology achieves lower gate charge (Qg) and reduced Miller plateau voltage compared to its predecessors, which reduces switching losses at high frequencies. This makes the part well suited to DC-DC converter synchronous rectifiers on the low-side switch position and small brushless DC (BLDC) motor half-bridges up to a few hundred kHz. The avalanche rating gives designers headroom against inductive kickback in motor and solenoid applications. Typical applications include DC-DC buck converters in notebook and server power rails, battery protection and load switching in portable equipment, low-voltage synchronous rectifiers on the secondary side of isolated power supplies, and small motor drivers for fans, pumps, and toys. Its SO-8 footprint and 30V rating align with 12V and 19V bus architectures commonly used in computing and telecom systems. When designing with the IRF7313TRPBF, ensure the gate drive swing reaches at least 4.5V at the gate pin for full enhancement and minimum RDS(on). Use wide PCB copper pours on pins 5/6/7/8 (drain tabs) to keep junction temperature within the 150C maximum rating. Place a gate-source resistor of 10k to 100k ohms on each gate to prevent unwanted turn-on from dv/dt coupling. This page synthesizes current distributor pricing, parametric drop-in alternatives, and practical PCB design notes beyond what is shown in the manufacturer's datasheet. All specifications are extracted from the official Infineon IRF7313 datasheet and verified against DigiKey and Mouser listings as of 2026-09-10.
IRF7342PBF - 55V Dual P-Channel HEXFET MOSFET, 3.4A, SO-8 | Infineon
The Infineon IRF7342PBF is a dual P-channel HEXFET power MOSFET in an 8-pin SO-8 surface-mount package, rated at -55V V(DSS), 3.4A continuous drain current, and 0.105 ohm maximum on-resistance per channel. It is part of Infineon's Fifth Generation HEXFET family, utilizing advanced processing techniques to deliver extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design for high-efficiency power conversion. The dual-die configuration in SO-8 enables full-bridge, half-bridge, and synchronous-rectifier topologies from a single small-footprint package, with each die independently wired to its own source, gate, and drain pins. A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled semiconductor switch used to switch or amplify electronic signals in power-conversion circuits. P-channel variants conduct when the gate is pulled below the source, making them well-suited to high-side switching in systems powered from a positive rail because they can be driven by a low-voltage logic signal without requiring a bootstrap or charge-pump supply. As a P-channel MOSFET in a dual SO-8 package, the IRF7342PBF belongs to the discrete-semiconductor hierarchy: MOSFET -> P-channel MOSFET -> power MOSFET -> power switching transistor -> semiconductor. Key features include a planar cell structure for wide safe operating area (SOA), silicon optimized for switching below 100 kHz, dynamic dv/dt rating, and 2W maximum power dissipation. The customized SO-8 lead frame provides enhanced thermal characteristics and multiple-die capability, and the package supports vapor-phase, infrared, and wave soldering. Industry-standard SO-8 pinout makes the IRF7342PBF drop-in compatible with countless other dual P-channel SO-8 MOSFETs, simplifying PCB layout reuse. Typical applications include load switching, DC-DC conversion (synchronous rectification and buck/boost stages), battery management systems, motor control H-bridges, power-OR-ing circuits, and high-side switches in industrial, computing, and telecom power rails. The wide SOA allows use in linear-region load-dump protection circuits where other MOSFETs would fail thermally. When designing with this device, ensure that Vgs(th) thresholds and gate-drive strength match the upstream controller, and place the gate-drive resistor close to the gate pin to limit parasitic ringing at turn-off. Add adequate copper pour under the exposed pad region to keep junction temperature within ratings at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRF7342TRPBF - 55V Dual P-Channel HEXFET MOSFET Array | Infineon
The Infineon IRF7342TRPBF is a dual P-channel HEXFET power MOSFET array rated at -55V Vds and -3.4A continuous drain current per channel, integrated into a single 8-pin SOIC (SO-8) surface-mount package with a maximum power dissipation of 2W. It uses Fifth Generation HEXFET processing to achieve extremely low on-resistance per silicon area while preserving fast switching speed and the ruggedness HEXFET devices are known for, giving designers an efficient and reliable dual switch in a compact footprint. Key specifications include a drain-to-source on-resistance (RDS(on)) of approximately 0.105 ohm at VGS=-10V, a gate threshold voltage around -1V to -3V, and a continuous drain current of -3.4A at 25C. The device is rated for avalanche operation, features an intrinsic body diode, and supports logic-level gate drive at -10V VGS. Its SO-8 package footprint is industry standard for dual MOSFET arrays, enabling direct footprint compatibility with many competing -55V dual P-channel MOSFETs. As a P-channel MOSFET array, the IRF7342TRPBF belongs to the field-effect transistor (FET) family, which is a subclass of discrete power semiconductors. Within power management topologies, dual P-channel arrays are commonly used as high-side switches or load switches on the low side of the positive rail, paired with complementary N-channel or P-channel drivers in synchronous and half-bridge applications. Typical applications include battery management load switching in portable electronics, full-bridge and half-bridge motor driver outputs, DC-DC converter high-side switches, power-rail OR-ing circuits, and USB power switching. The -55V rating provides substantial headroom for 12V and 24V bus protection, while the 3.4A continuous current rating handles moderate-load switching in industrial and consumer products. When designing with this part, note that P-channel high-side switching simplifies the gate drive (no bootstrap or charge pump required) at the cost of RDS(on) versus an equivalent N-channel, so thermal performance at full load should be verified against the SO-8 theta_JA of approximately 62.5 C/W on a 1 oz. copper pour.
IRF7343TRPBF - 55V Dual N/P-Channel MOSFET | Infineon
The Infineon IRF7343TRPBF is a dual N- and P-channel enhancement-mode MOSFET array housed in an 8-pin SOIC (SO-8) surface-mount package, designed for complementary half-bridge and synchronous switching topologies. The N-channel section is rated to 55 V VDS and 4.7 A continuous drain current, while the P-channel section delivers 55 V VDS and 3.4 A continuous drain current, with the pair dissipating 2 W of total power. It belongs to Infineon's (formerly International Rectifier) Fifth-Generation HEXFET family using IR MOSFET technology, achieving very low on-resistance per silicon area. A dual MOSFET array integrates two independent MOSFETs into a single package, simplifying PCB layout for half-bridges, full-bridges, and synchronous rectifiers where complementary switching is required. The N+P polarity combination allows designers to implement push-pull stages, H-bridges, and complementary load drivers with one component instead of two discrete devices, saving board area and reducing parasitic inductance between the two switches. This product category sits within the broader hierarchy: MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor device, and serves as a fundamental building block in switch-mode power conversion and motor control. Key features include 0.043 ohm typical on-resistance for the N-channel, fully avalanche-rated ruggedness, lead-free construction, and generation V technology that minimizes conduction loss. The part is specified for surface-mount reflow assembly and is RoHS compliant, making it suitable for modern lead-free manufacturing lines. The combined 2 W power dissipation and SO-8 thermal footprint enable compact designs without external heatsinking at moderate load currents. Typical applications include DC motor drivers, solenoid and valve drivers, half-bridge and full-bridge converters, battery protection circuits, and synchronous rectifier stages in low-voltage DC-DC converters. The complementary polarity also makes it useful for high-side/low-side gate drive bootstrapping in discrete converter implementations. When designing with this device, ensure the SO-8 pad layout includes adequate copper area on both drain pads for thermal dissipation. Verify that gate drive voltage levels (VGS) comfortably exceed each channel's threshold for the chosen load current, and add a gate-source resistor to prevent parasitic turn-on in half-bridge applications.
IRF7907TRPBF - Dual N-Ch 30V 9.1A/11A MOSFET | Infineon SO-8
The Infineon IRF7907TRPBF is a dual N-channel power MOSFET array built on Infineon's IR MOSFET technology, rated at 30 V VDS, 9.1 A continuous ID per channel (11 A pulsed), and housed in an industry-standard 8-pin SO-8 (SOIC-8) surface-mount package. The part is supplied on tape and reel (TR) and is lead-free (PBF suffix), making it suitable for automated high-volume assembly. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. As a dual N-channel device, the IRF7907TRPBF integrates two independent MOSFETs on a single die, allowing engineers to replace two discrete transistors with one part - saving PCB area, simplifying layout, and reducing parasitic inductance in synchronous buck or half-bridge topologies. Key specifications from the manufacturer product page include a maximum drain-source voltage of 30 V, a maximum on-resistance of 11.8 mOhm at VGS = 10 V (with some sources citing 9.8 mOhm typical), a continuous drain current of 9.1 A per channel at 25 C, and a pulsed current capability of 11 A. The SO-8 package is rated for 2 W total power dissipation. Gate threshold voltage (VGS(th)) is approximately 1.35 V, supporting logic-level drive from 3.3 V or 5 V microcontrollers. The IRF7907 family leverages Infineon's IR MOSFET technology, which uses a hexfet-style trench structure to minimize R DS(on) per unit silicon area. The low on-resistance reduces conduction losses in continuous-current applications, while the low gate charge enables fast switching transitions that reduce switching losses at higher frequencies. Typical applications include point-of-load (POL) synchronous buck converters, DC motor drivers, battery protection circuits, load switches, and power-ORing circuits in computing and telecom equipment. The dual-channel configuration makes the part especially attractive for synchronous rectification where one FET acts as the control switch and the other as the freewheeling switch. When designing with this part, ensure the gate-drive voltage is at least 10 V to achieve the rated R DS(on). At high load currents, calculate conduction losses as P = I^2 x R DS(on) and verify the SO-8 thermal pad footprint is adequately copper-clad to keep junction temperature within the 150 C maximum. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
IRF8714TRPBF - 30V 14A 8.7mΩ N-Ch HEXFET MOSFET | Infineon
The Infineon IRF8714TRPBF is a 30 V single N-channel StrongIRFET power MOSFET rated for 14 A continuous drain current and an on-state resistance of 8.7 mΩ, housed in a surface-mount 8-pin SO-8 package. It combines Infineon's HEXFET technology with the SO-8 footprint to deliver a high-current, low-RDS(on) device suitable for both DC-DC conversion and load switching. Typical gate charge is 8.1 nC, enabling fast switching transitions at moderate gate-drive currents. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. N-channel MOSFETs are widely used as low-side or high-side switches in switching power supplies, motor drivers, and load management circuits because of their low on-state resistance and high switching speed. The IRF8714 belongs to the StrongIRFET family, which is optimized for high-current, low-voltage applications where both conduction and switching losses matter. Key features include a 30 V drain-source breakdown voltage, 8.7 mΩ maximum RDS(on) at VGS = 10 V, 14 A continuous drain current at TA = 25 °C (with 2.5 W power dissipation), and a logic-compatible 20 V maximum gate-source voltage. The SO-8 footprint offers excellent thermal conduction through the source pin and copper pad, allowing the device to drive 14 A in a compact PCB area. Avalanche-rated construction adds robustness against inductive load transients common in motor and solenoid circuits. The IRF8714 uses Infineon's proprietary planar HEXFET cell structure, which minimizes cell pitch and reduces RDS(on) × area figure of merit. Its 8.1 nC total gate charge keeps drive losses modest, and the SO-8 package provides a low thermal resistance path when soldered to a properly sized copper pour. The device is also RoHS-compliant and lead-free, meeting modern environmental requirements for consumer and industrial equipment. Typical applications include synchronous buck converters in point-of-load regulators, DC motor drive and reverse-polarity protection circuits, battery management and load switching in notebook and tablet designs, hot-swap controllers for enterprise servers, and high-current LED drivers. The 30 V rating provides ample margin for 12 V bus rails with significant transient headroom. When designing with the IRF8714TRPBF, ensure that the SO-8 thermal pad is soldered to at least 1 square inch of copper to keep junction temperature within safe limits at high currents. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and avoid shoot-through in synchronous topologies. This page synthesizes distributor pricing, drop-in alternative parts, and practical PCB design notes not found in the manufacturer datasheet alone.
IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon
The Infineon IRF9952TRPBF is a dual-channel complementary MOSFET array integrating one N-channel and one P-channel HEXFET power MOSFET in a single 8-pin SOIC surface-mount package, rated 30 V VDS with 3.5 A continuous drain current on the N-channel and 2.3 A on the P-channel. It uses Infineon's Fifth Generation HEXFET process to deliver an industry-standard low on-resistance footprint at 30 V, with the N-channel rated at 0.10 ohm R_DS(on) max and the P-channel at 0.25 ohm R_DS(on) max. A dual-MOSFET array like the IRF9952 integrates two discrete transistors into one IC package, providing a compact synchronous-switch or half-bridge building block for power management designs. In the system hierarchy, this part falls under discrete semiconductors (MOSFETs) and specifically into the dual/complementary MOSFET category that bridges single-MOSFET discretes and full half-bridge driver ICs. The complementary N+P configuration lets one array drive both high-side and low-side positions of a small buck, load-switch, or motor-reverse circuit without the BOM overhead of two separate SOT-23 or SO-8 FETs. Key features include: 30 V absolute maximum VDS (N-channel) and -30 V VDS (P-channel), 3.5 A continuous I_D (N-channel) and 2.3 A continuous I_D (P-channel), 2 W total package power dissipation, and SO-8 surface-mount footprint. The complementary polarity means the P-channel is well suited to high-side load-switch roles where a P-FET eliminates the need for a charge pump, while the N-channel can serve as the low-side synchronous rectifier. Per the Infineon datasheet, total power dissipation is shared across both die inside the same SO-8 thermal envelope, with thermal resistance around 62.5 C/W. Architecturally, the IRF9952 leverages Fifth Generation HEXFET technology, which optimized cell density and gate-charge figures to minimize both conduction and switching losses versus earlier generations. The two die share pin 4 and pin 5 as the common source/drain return path, while pins 1-3 are dedicated to the N-channel (G1, D1, S1) and pins 6-8 to the P-channel (G2, D2, S2). This pinout makes it a drop-in upgrade for legacy IRF7507/IRF7509 family designs. Typical applications include small DC-DC synchronous buck converters, USB load switches, battery protection circuits in portable electronics, small motor H-bridge driver stages, and complementary level shifters in industrial control. The 30 V rating and 3.5 A capability also make it suitable for 12 V automotive accessory rails. When designing with this part, derate total package power dissipation so both die stay within the 2 W SO-8 budget. Gate-drive voltage thresholds differ between the N-channel (logic-level friendly) and the P-channel (which needs careful gate-source headroom). Pair the array with a gate driver that can source/sink enough current for the combined gate charge (typical Qg figures are 10-20 nC per channel). This page synthesizes distributor pricing, verified drop-in alternatives including IRF7309 and IRF7319, and practical design notes not found in a single manufacturer datasheet.
IRF9Z34NPBF - 55V P-Ch HEXFET MOSFET, 19A, TO-220 | Infineon
The Infineon IRF9Z34NPBF is a P-Channel 55 V HEXFET power MOSFET rated for 19 A continuous drain current (Tc) and 68 W power dissipation (Tc) in a through-hole TO-220AB package. As a fifth-generation HEXFET Power MOSFET from International Rectifier (now Infineon), it leverages advanced process technology to deliver an extremely low on-resistance per silicon area of 100 milliohms (typical Rds(on) at Vgs = -10 V) and fast switching speed. The P-Channel polarity makes it well suited to high-side switching in low-voltage rails where a simple gate-drive referenced to ground is preferred over the more common N-Channel bootstrap topology. An N-channel MOSFET is a type of field-effect transistor in which the conductive channel is formed by electrons when a positive gate-to-source voltage is applied. In contrast, a P-channel MOSFET (PMOS) uses holes as the charge carriers and turns ON when the gate is pulled below the source. PMOS belongs to the broader MOSFET family -> field-effect transistor -> discrete semiconductor -> power semiconductor, and it is widely used as a high-side switch in power distribution, load switching, battery protection, and DC-DC conversion where the source is tied to the positive rail. Key features include 55 V Vds, 19 A Id, 68 W power dissipation, 100 milliohm typical Rds(on) at Vgs = -10 V, avalanche-rated dv/dt robustness, and a TO-220AB through-hole package with industry-standard pinout (Gate-Drain-Source). The "PBF" suffix denotes lead-free, halogen-free compliance suitable for RoHS/REACH product designs. The TO-220AB mechanical package is universally preferred for commercial-industrial power dissipation and provides a tab that can be screwed to a heatsink for higher continuous current. Typical applications include DC motor drives, solenoid drivers, high-side load switches, battery polarity protection, and power OR-ing circuits. In automotive and industrial 12 V/24 V bus systems, this device supports reverse-battery protection and active load management. In a switching topology, it can replace a PNP bipolar transistor or an N-Channel device that would otherwise require a charge pump, simplifying gate drive and reducing component count. When designing with this part, ensure adequate heatsinking at high continuous currents because TO-220AB thermal resistance is typically ~62 C/W without a heatsink. Use a low-impedance gate driver and add a gate-source resistor (typically 10 kOhm) to prevent unintended turn-on from Miller-induced dv/dt transients. This page synthesizes distributor pricing, drop-in equivalents, and practical design notes not found in the manufacturer datasheet alone.
IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon
The Infineon IRFL024ZTRPBF is a 55 V, 5.1 A N-channel HEXFET power MOSFET housed in a surface-mount SOT-223 package with an on-resistance of 57.5 mOhm maximum and a typical gate charge of 9.1 nC. The device is built using Infineon's HEXFET advanced process technology, delivering low conduction loss in a compact footprint suited to space-constrained power switching applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to drive loads, regulate current, or perform synchronous rectification in power electronics. The IRFL024ZTRPBF sits in the N-channel enhancement-mode category, which is the most common topology for low-side switching, DC-DC conversion, and motor control because N-channel carriers offer lower on-resistance per unit silicon area than P-channel equivalents. Within the broader taxonomy, this part belongs to: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET. Key features include a continuous drain current of 5.1 A at 25 C case temperature, a pulsed drain current rating higher than the continuous rating for transient load handling, and a 1 W power dissipation figure in the SOT-223 package. The HEXFET process reduces cell pitch and optimizes gate charge, achieving a 9.1 nC total gate charge that minimizes driver losses at high switching frequencies. The SOT-223 surface-mount package exposes the drain tab for direct PCB heatsinking, enabling usable current well above the bare SOT-23-class parts. Architecturally, the device uses a planar HEXFET cell structure with a vertical DMOS current path. The 57.5 mOhm Rds(on) at 10 V Vgs translates into roughly 290 mW of conduction loss at 2.3 A continuous drain current, allowing efficient low-side switch operation without elaborate thermal management at moderate loads. The SOT-223 thermal pad attaches directly to PCB copper, providing a low thermal resistance path for heat removal. Typical applications include low-side switching in DC-DC converters, relay and solenoid drivers, motor speed control, load switching in automotive body modules, battery protection circuits, and LED driver stages. The 55 V drain-source rating provides ample margin for 12 V and 24 V bus systems where inductive transients can approach several tens of volts. When designing with this part, ensure the gate is driven to at least 10 V for full enhancement and use a gate resistor to control ringing. The exposed drain tab must be soldered to a copper pour sized to limit the junction-to-ambient thermal rise. Verify SOA at the target DC and pulsed operating points. This page synthesizes distributor pricing, verified drop-in alternatives, and practical PCB design guidance that complements the Infineon datasheet with engineering context for sourcing and design decisions.
IRFP4768PBF - 250V 93A N-Channel MOSFET TO-247AC | Infineon
The Infineon Technologies IRFP4768PBF is an N-channel HEXFET power MOSFET rated for 250V drain-to-source breakdown voltage, 93A continuous drain current at Tc=25C, and 520W power dissipation in a TO-247AC through-hole package. Its maximum on-state resistance of 17.5 mOhm makes it a strong choice for low-loss power switching. A power MOSFET is a field-effect transistor designed to switch significant power levels by controlling drain-to-source current through a gate-generated electric field. Within the power-electronics hierarchy, it serves as the fundamental switching element of DC-DC converters, motor drives, inverters, and switched-mode power supplies (SMPS), where it is preferred over bipolar transistors for its fast switching, low gate-drive power, and high efficiency. Key features include the low RDS(on) of 17.5 mOhm, which minimizes conduction losses, and a total gate charge of 180 nC that supports efficient high-frequency switching. The device tolerates a gate-to-source voltage of plus/minus 20V, offers improved gate, avalanche, and dynamic dV/dt ruggedness, and is fully characterized for capacitance and avalanche SOA. The enhanced body diode dV/dt and di/dt capability reduce losses in bridge topologies. Technically, the part belongs to the IR MOSFET HEXFET family using planar stripe geometry manufactured on Infineon's advanced power MOSFET process. The junction-to-case thermal resistance of 0.24 C/W enables the 520W rating with proper heatsinking, and the TO-24AC package allows direct mounting to a heat sink for high-power designs. Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched and high-frequency circuits, DC-DC converters, motor control, power factor correction (PFC), and welding equipment. The 250V rating suits off-line and 48V-bus-derived systems with margin. Design tip: drive the gate with 10-12V to fully enhance the channel and minimize RDS(on), use a gate resistor to control switching speed and EMI, and provide adequate heatsinking since the PbF package is RoHS-compliant and lead-free.