1EDI60N12AFXUMA1 vs 1ED3124MU12HXUMA1 比較

詳細並排比較 1EDI60N12AFXUMA1 由 Infineon 與 1ED3124MU12HXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 1EDI60N12AFXUMA1 1ED3124MU12HXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Configuration Single high-side, galvanically isolated —
Number of Channels 1 —
Isolation Type Magnetic (coreless transformer) —
Isolation Voltage 1200 V working voltage —
Maximum Output Voltage 40 V —
Source Current (typ.) 10 A —
Sink Current (typ.) 9.4 A —
Supply Voltage (VDD) 3.1 V to 17 V —
Propagation Delay (typ.) 120 ns 90 ns
Input Logic Compatibility 3.3 V and 5 V CMOS/TTL —
Creepage Distance (min.) 4 mm —
Short-Circuit Clamping Yes (separate sink/source outputs) —
工作溫度 -40C to +125C —
封裝 PG-DSO-8-51 (DSO-8) PG-DSO-8-66 (DSO-8 wide-body)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] MSL2 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Product Type — Single-channel isolated gate driver IC
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
輸出配置 — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Common-Mode Transient Immunity (CMTI) — 200 kV/us minimum
UVLO Threshold — 10.5 V
Isolation Technology — Coreless transformer (CT)
Creepage Distance — >8 mm
工作溫度範圍 — -40C to +125C
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules

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