1EDI60N12AFXUMA1 vs 1ED3124MU12HXUMA1 Perbandingan

Perbandingan bersamaan detil 1EDI60N12AFXUMA1 dari Infineon dan 1ED3124MU12HXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDI60N12AFXUMA1 1ED3124MU12HXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Single high-side, galvanically isolated —
Number of Channels 1 —
Isolation Type Magnetic (coreless transformer) —
Isolation Voltage 1200 V working voltage —
Maximum Output Voltage 40 V —
Source Current (typ.) 10 A —
Sink Current (typ.) 9.4 A —
Supply Voltage (VDD) 3.1 V to 17 V —
Propagation Delay (typ.) 120 ns 90 ns
Input Logic Compatibility 3.3 V and 5 V CMOS/TTL —
Creepage Distance (min.) 4 mm —
Short-Circuit Clamping Yes (separate sink/source outputs) —
Suhu Kerja -40C to +125C —
Paket PG-DSO-8-51 (DSO-8) PG-DSO-8-66 (DSO-8 wide-body)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] MSL2 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Product Type — Single-channel isolated gate driver IC
Manufacturer Family — EiceDRIVER Compact 1ED31xxMU12H (X3 compact)
Peak Output Current (source/sink) — 14 A typical
Konfigurasi Output — Separate source and sink pins
Galvanic Isolation (rms) — 5.7 kV (UL 1577)
Working Voltage (continuous) — 1200 V
Common-Mode Transient Immunity (CMTI) — 200 kV/us minimum
UVLO Threshold — 10.5 V
Isolation Technology — Coreless transformer (CT)
Creepage Distance — >8 mm
Rentang Suhu Kerja — -40C to +125C
Target Switch Types — IGBT, power MOSFET, SiC MOSFET
Recommended Switch Class — Up to 2300 V IGBT / SiC modules

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon