1EDN7116GXTMA1 vs 1ED3127MU12FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7116GXTMA1 disebabkan oleh Infineon dan 1ED3127MU12FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7116GXTMA1 1ED3127MU12FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs Single-channel isolated gate driver
Driver Configuration Non-inverting, single low-side —
Number of Drivers 1 —
Peak Source Current 2 A (typ) —
Peak Sink Current 4 A (typ) —
Input Type Truly Differential Input (TDI) —
Supply Voltage (VCC) 4.5 V to 5.5 V —
Switch-Node Blocking Voltage 200 V (max) —
Propagation Delay (Typ) 9 ns —
Rise Time (Typ) 3 ns —
Fall Time (Typ) 3 ns —
Quiescent Current (Typ) 0.6 mA —
Miller Clamp Integrated, active —
UVLO Yes (VCC and gate-rail monitored) —
Gambaran Suhu Operasi -40 °C to +125 °C -40C to +125C
Kemasan PG-VSON-10-4 (3.0 mm × 3.0 mm) PG-DSO-8-72 (SOIC-8 wide-body)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL3 —
Status RoHS Compliant Compliant
Target Switch Technology GaN HEMT (CoolGaN) or Si MOSFET —
Bilangan Output — 1
Konfigurasi Output — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Propagation Delay (typ.) — 15 ns
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
Drives — IGBT, MOSFET, SiC MOSFET

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