1EDN8511BXUSA1 vs 1EDN7511B Comparison

Detailed side-by-side comparison of 1EDN8511BXUSA1 by Infineon and 1EDN7511B by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN8511BXUSA1 1EDN7511B
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.54 $0.38
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
Operating Junction Temperature -40 °C to +150 °C —
Package PG-SOT23-6-2 SOT-23-6 (PG-SOT23-6-2)
Mounting Type Surface Mount Surface Mount
Pin Count 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] —
Driver Type — Single-channel low-side gate driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 20 V
UVLO Threshold (logic-level variant) — 1.9 V to 2.3 V
UVLO Threshold (normal-level variant) — 800 mV to 1.2 V (typ)
Propagation Delay — 4.5 ns (typ)
Rise Time (typ) — 19 ns
Fall Time (typ) — 19 ns
Output On-Resistance (pull-up) — 0.85 ohm
Output On-Resistance (pull-down) — 0.35 ohm
Input Logic — Inverting + Non-inverting
Operating Temperature — -40 C to +150 C
Supported Switches — MOSFET (OptiMOS, CoolMOS), GaN HEMT

Datasheets & Resources

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