1EDN8511BXUSA1 vs 1EDN7511B 对比

详细并排对比 1EDN8511BXUSA1 出自 Infineon 和 1EDN7511B 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 量产中
Infineon
1EDN7511B 1EDN7511B - 4A/8A Low-Side Gate Driver IC | Infineon

1EDN7511B - 4A/8A Low-Side Gate Driver IC | Infineon

1EDN7511B ✓ 量产中

规格对比

参数 1EDN8511BXUSA1 1EDN7511B
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.38
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
工作结温 -40 °C to +150 °C —
封装 PG-SOT23-6-2 SOT-23-6 (PG-SOT23-6-2)
安装类型 Surface Mount Surface Mount
引脚数量 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
Driver Type — Single-channel low-side gate driver
Number of Channels — 1
Supply Voltage (VCC) — 4.5 V to 20 V
UVLO Threshold (logic-level variant) — 1.9 V to 2.3 V
UVLO Threshold (normal-level variant) — 800 mV to 1.2 V (typ)
Propagation Delay — 4.5 ns (typ)
Rise Time (typ) — 19 ns
Fall Time (typ) — 19 ns
Output On-Resistance (pull-up) — 0.85 ohm
Output On-Resistance (pull-down) — 0.35 ohm
Input Logic — Inverting + Non-inverting
工作温度 — -40 C to +150 C
Supported Switches — MOSFET (OptiMOS, CoolMOS), GaN HEMT

数据手册与资源

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